Leveler compositions for use in copper deposition in manufacture of microelectronics

A composition for use in electrodeposition of copper for electrodeposition of copper on a dielectric or semiconductor base structure, the composition comprising:

• Cu† ions;
• an acid selected from the group consisting of sulfuric acid and an alkylsulfonic acid;
• a suppressor;
• a polar organic solvent characterized by a boiling point (neat) of at least 120° C.;
• and
• a quatemized poly(epihalohydrin) comprising n repeating units corresponding to structure IN and p repeating units corresponding to structure IP:
• wherein Q has a structure corresponding to a substituted or unsubstituted nitrogen-containing heteroaryl compound;
• n is an integer between 3 and 35, p is an integer between 0 and 25;
• and wherein n/(n+p)<1;
• X is a halo substituent;
• and X− is a monovalent anion, and wherein Q is
• wherein structure IIC is a heterocyclic moiety and each of R5, R6, R7, R8 and R9 is independently selected from the group consisting of hydrogen, substituted or unsubstituted alkyl, substituted or unsubstituted alkenyl, substituted or unsubstituted alkynyl, substituted or unsubstituted aralkyl, substituted or unsubstituted alicyclic, and substituted or unsubstituted aryl, and substituted or unsubstituted heterocyclic.

A process for formulating an electrodeposition composition for electrodeposition of copper on a dielectric or semiconductor substrate, the process comprising combining in an aqueous medium a source of copper ions, an acid, a suppressor and a solution of a quaternized poly(epihalohydrin),

• the solution of poly(epihalohydrin) comprising a polar organic solvent characterized by a boiling point (neat) of at least about 120° C.,
• the quaternized poly(epihalohydrin) comprising n repeating units corresponding to the structure IN and p repeating units corresponding to the structure IP:
• wherein Q has a structure corresponding to a substituted or unsubstituted nitrogen-containing heteroaryl compound;
• n is an integer between 3 and 35, p is an integer between 0 and 25;
• and wherein n/(n+p)<1;
• X is a halo substituent;
• and X− is a monovalent anion, and wherein Q is
• wherein structure IIC is a heterocyclic moiety and each of R5, R6, R7, R8 and R9 is independently selected from the group consisting of hydrogen, substituted or unsubstituted alkyl, substituted or unsubstituted alkenyl, substituted or unsubstituted alkynyl, substituted or unsubstituted aralkyl, substituted or unsubstituted alicyclic, and substituted or unsubstituted aryl, and substituted or unsubstituted heterocyclic.