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US 10,519,545 B2Granted
Systems and methods for a plasma enhanced deposition of material on a semiconductor substrate
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKun-Mo Lin, Yi-Hung Lin, Jr-Hung Li, Tze-Liang Lee, Ting-Gang Chen, Chung-Ting Ko
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Abstract
A system and method for plasma enhanced deposition processes. An exemplary semiconductor manufacturing system includes a susceptor configured to hold a semiconductor wafer and a sector disposed above the susceptor. The sector includes a first plate and an overlying second plate, operable to form a plasma there between. The first plate includes a plurality of holes extending through the first plate, which vary in at least one of diameter and density from a first region of the first plate to a second region of the first plate.
Claims19
A semiconductor manufacturing system comprising:
- a plasma generating unit, comprising:
- a remote plasma source;
- a susceptor configured to hold a semiconductor wafer;
- and
- a module disposed above the susceptor, wherein the module includes:
- within the module, a first plate and an overlying second plate, operable to form a plasma therebetween by applying a voltage difference between the first plate and the overlying second plate;
- and
- wherein the first plate includes a plurality of holes arranged a substantially wedge-shaped region of the first plate, wherein each of the plurality of holes extend through the first plate, wherein the plurality of holes varies in at least one of diameter and density from a first region of the first plate to a second region of the first plate;
- wherein the module and the first plate each have a substantially wedge-shape and wherein the overlying second plate has a substantially rectangular shape, wherein the first plate and the overlying second plate having the substantially rectangular shape create an electrode portion that forms a uniform electric field in a radial direction, the uniform electric field being larger than the substantially wedge-shaped region of the first plate having the plurality of holes.
6 more elements
A deposition tool for performing atomic layer deposition (ALD), the tool comprising:
- a plasma generating unit comprising:
- a remote plasma generating source;
- a susceptor operable to hold a semiconductor wafer;
- a plurality of modules disposed above the susceptor, wherein each of the plurality of modules is a wedge shape and includes:
- a first RF biased plate;
- a second plate coupled to ground, wherein the second plate has a first plurality of holes near a first end and a second plurality of holes near a second end, wherein the first and second pluralities of holes are operable to provide a different amount of excited molecules to pass through the second plate, the first and second pluralities of holes being arranged in a wedge shape,
- a plasma generation region disposed between the first RF biased plate and the second plate, wherein the plasma generation region is defined by a rectangular shape of the first RF biased plate and a wedge-shape of the second plate, wherein the excited molecules are formed in the plasma generation region;
- and
- a gas inlet plate disposed above the second plate wherein the gas inlet plate includes a first aperture connected to a first conduit and a second aperture connected to a second conduit, the first conduit being separate from the second conduit;
- and
- a plate above the plurality of modules, wherein the plurality of modules is attached to the plate, wherein a first module of the plurality of modules has a first arrangement of the first plurality of holes and the second plurality of holes and wherein a second module of the plurality of modules has a second arrangement of the first plurality of holes and the second plurality of holes, the second arrangement being different than the first arrangement.
8 more elements
A semiconductor device manufacturing tool including a plasma generating unit, the plasma generating unit comprising:
- a susceptor configured to hold a semiconductor wafer;
- and
- a plurality of wedge-shaped modules disposed above the susceptor, each of the plurality of wedge-shaped modules defined by a center end and an edge end, the center end having a shorter width, wherein each of the plurality of wedge-shaped modules includes:
- a first plate and an overlying biased plate, wherein the first plate having a wedge-shape and the overlying biased plate define an electrode portion, the electrode portion defined by a rectangular shape of the overlying biased plate, wherein the electrode portion is operable to form a plasma there between;
- and wherein the first plate includes a plurality of holes extending through the first plate, wherein the plurality of holes increase in diameter from a first center region of the first plate to an outer region of the first plate, wherein the plurality of holes in the first plate are arranged in a wedge-shape, where the plurality of holes in the wedge-shape is exclusively within the electrode portion;
- and
- a respective region of housing between each of the plurality of wedge-shaped modules, wherein one of the respective regions extends from a first module of the plurality of wedge-shaped modules to a second module of the plurality of wedge-shaped modules and includes a plurality of vacuum holes and a plurality of gas supply outlets, wherein the plurality of vacuum holes have a first density adjacent the center end of each of the plurality of wedge-shaped modules and the plurality of vacuum holes have a second density adjacent the edge end of each of the plurality of wedge-shaped modules, the first density being less than the second density.
4 more elements
Dependencies are inferred from the claim text.