Method for enabling optimized material deposition

A method for atomic layer deposition comprising:

• placing a substrate in a first reaction zone with a first temperature and a first pressure and a first atmosphere that is capable of being in gas isolation from a first purge zone and a second reaction zone;
• contacting the substrate in the first reaction zone with a first reactant at the first temperature to allow atoms in the reactant to combine with reaction sites on the substrate to form a first layer of the reactant on the substrate, wherein the first reactant is a single source reactant;
• placing the substrate in the first purge zone that is configured to be in gas isolation from the first reaction zone and the second reaction zone such that communication of gas between the first purge zone and the reaction zone and the second reaction zone is prevented;
• purging the substrate in the first purge zone with flowing an inert gas at a second pressure and a second temperature;
• placing the substrate in the second reaction zone that is configured to be in gas isolation from the first reaction zone and the first purge zone, wherein the second reaction zone is isolated from the first reaction zone and the first purge zone by a valve operable to prevent communication of gas, wherein the second reaction zone has a third atmosphere and a third temperature to decompose and crystalize the adsorbed first reactant to form a first layer of new material, wherein the third temperature is from 501° C. to 2000° C.;
• placing the substrate in a second purge zone;
• purging the substrate in the second purge zone with flowing the inert gas at the second pressure and the second temperature;
• and
• placing the substrate in the first reaction zone with the first atmosphere, the first reactant, and the first temperature and repeating the method until a layer of material of desired thickness is formed on the substrate, wherein the substrate is exposed to the single source reactant and no other reactants during the method.