Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

A method of manufacturing a semiconductor device, comprising:

• charging a plurality of substrates stored in a substrate container of a buffer shelf on a substrate support within a transfer chamber via an opening;
• closing the opening with a gate and loading the substrate support on which the plurality of substrates are stacked into a reaction tube installed in the transfer chamber;
• forming a film on the plurality of substrates;
• unloading the substrate support on which the plurality of substrates are stacked from the reaction tube;
• and
• opening the gate and unloading the plurality of substrates stacked on the substrate support from the transfer chamber to the substrate container of the buffer shelf via the opening,
• wherein, in the act of loading the substrate support, the act of forming the film, and the act of unloading the substrate support, a clean unit that supplies a clean atmosphere to the transfer chamber is operated in a first mode in which an internal atmosphere of the transfer chamber is intaken, cleaned and supplied to the transfer chamber,
• wherein, in the act of charging the plurality of substrates and the act of unloading the plurality of substrates, the clean unit is operated in a second mode in which air introduced from an outside is cleaned and supplied to the transfer chamber and a surplus air is discharged to an outside of an apparatus,
• wherein, in the first mode, an inert gas is supplied from an inert gas supplier to the transfer chamber, and
• wherein, in the second mode, while the gate is opened, the transfer chamber is kept at a positive pressure by an air atmosphere and air flows out of the transfer chamber.

A non-transitory computer-readable recording medium storing a program that causes a substrate processing apparatus to perform a process by a computer, the process comprising:

• charging a plurality of substrates stored in a substrate container of a buffer shelf on a substrate support within a transfer chamber via an opening;
• closing the opening with a gate and loading the substrate support on which the plurality of substrates are stacked into a reaction tube installed in the transfer chamber;
• forming a film on the plurality of substrates;
• unloading the substrate support on which the plurality of substrates are stacked from the reaction tube;
• and
• opening the gate and unloading the plurality of substrates stacked on the substrate support from the transfer chamber to the substrate container of the buffer shelf via the opening,
• wherein the process further comprises:
• in the act of loading the substrate support, the act of forming the film, and the act of unloading the substrate support, causing an inert gas supplier to supply an inert gas to the transfer chamber;
• outside the act of loading the substrate support, the act of forming the film, and the act of unloading the substrate support, causing the inert gas supplier to stop supplying the inert gas;
• and
• controlling a clean unit that supplies a clean atmosphere to the transfer chamber to switch between a first mode and a second mode such that the transfer chamber is kept at a positive pressure by an air atmosphere and air flows out of the transfer chamber while the gate is opened,
• wherein, in the first mode, the clean unit intakes and cleans an internal atmosphere of the transfer chamber, and supplies the internal atmosphere thus cleaned to the transfer chamber, and
• wherein, in the second mode, air introduced from outside is cleaned and supplied to the transfer chamber and a surplus air is discharged out of the apparatus.