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US 10,519,034 B2Granted
Semiconductor device and method of producing a semiconductor device
AssigneeFraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
InventorsSabine Trupp, Michael Henfling, Karl Neumeier
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Abstract
A method of producing a semiconductor device includes providing a carrier structure having a semiconductor substrate; applying or introducing a precursor substance onto or into the carrier structure, treating the precursor substance for producing a porous matrix structure; introducing a functionalization substance into the porous matrix structure.
Claims5
A method of producing a semiconductor device, comprising:
- providing a carrier structure comprising a semiconductor substrate;
- applying or introducing a precursor substance onto or into the carrier structure, wherein the precursor substance comprises aluminum;
- patterning the aluminum to produce a matrix structure area and a contact area;
- treating the precursor substance by selectively applying a voltage to the matrix structure area for producing a porous matrix structure of aluminum oxide by anodic oxidation while the contact area is not oxidized;
- introducing a functionalization substance into the porous matrix structure.
2 more elements
A method of producing a semiconductor device, comprising:
- providing a carrier structure comprising a semiconductor substrate;
- applying or introducing a precursor substance onto or into the carrier structure;
- treating the precursor substance for producing a porous matrix structure;
- introducing a functionalization substance into the porous matrix structure,
- wherein the functionalization substance is configured to perform bonding with a further porous matrix structure, said further porous matrix structure also being loaded with the functionalization substance.
2 more elements
Dependencies are inferred from the claim text.