Grinding element, grinding wheel and manufacturing method of semiconductor package using the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Chao Mao, Chin-Chuan Chang, Jing-Cheng Lin, Wen-Hua Chang
Life of this patent
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Abstract
A grinding element mounted on a grinding wheel and a grinding wheel containing the same are provided for grinding. The grinding element includes a grinding tooth, and the grinding tooth includes a grinding material having a framework structure and pores distributed in the framework structure. The framework structure includes a bond material and abrasive particles that are bonded by the bond material. A pore size of the pores is larger than 40 microns but smaller than 70 microns. A manufacturing method for semiconductor packages using the same is also provided.
Claims19
A grinding element of a grinding wheel, comprising:
- a grinding tooth including a grinding material having
- a framework structure comprising abrasive particles and a bond material bonding the abrasive particles, wherein the bond material is a resin bond material, and
- pores distributed in the framework structure,
- wherein a pore size of the pores is greater than 40 microns and less than 70 microns, and the pores take about 55% volume per volume (% v/v) to about 70% v/v of a total volume of the grinding material.
A grinding wheel, comprising:
- a ring shaped metal base;
- and
- a plurality of grinding teeth mounted on a surface of the metal base,
- wherein the plurality of grinding teeth is separate from one another by a distance and are arranged along an outer rim portion of the metal base,
- wherein each of the plurality of grinding teeth includes a grinding material having a framework structure including abrasive particles and a bond material bonding the abrasive particle, and pores distributed in the framework structure, wherein the bond material is a resin bond material, and
- wherein the pores take about 55% volume per volume (% v/v) to about 70% v/v of a total volume of the grinding material, a pore size of the pores is greater than 40 microns and less than 70 microns, and a weight ratio of the abrasive particles to the bond material ranges from 3:1 to 5:1.
A manufacturing method for a semiconductor package, comprising:
- providing a carrier;
- forming through vias on the carrier and disposing chips on the carrier;
- forming a molding compound encapsulating the chips and the through vias;
- grinding the molding compound using a grinding wheel having grinding teeth including a grinding material, so as to expose the through vias;
- forming a redistribution layer on the molding compound and on the chips, wherein the redistribution layer is electrically connected to the through vias and the chips;
- and
- mounting conductive elements on the redistribution layer, wherein the conductive elements are electrically connected to the chips and the through vias, and
- wherein the grinding material includes a framework structure including abrasive particles and a resin bond material bonding the abrasive particles, and pores distributed in the framework structure taking about 55% volume per volume (% v/v) to about 70% v/v of a total volume of the grinding material, and a pore size of the pores being larger than 40 microns and smaller than 70 microns.
Dependencies are inferred from the claim text.