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US 10,518,292 B2Granted
CMOS ultrasonic transducers and related apparatus and methods
AssigneeButterfly Network, Inc.
InventorsJonathan M. Rothberg, Keith G. Fife, Tyler S. Ralston, Gregory L. Charvat, Nevada J. Sanchez
Life of this patent
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Abstract
CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.
Claims17
A method, comprising:
- forming a cavity on a top region of a complementary metal oxide semiconductor (CMOS) substrate, the cavity surrounded by a lip region;
- disposing a membrane over the lip region to substantially seal the cavity;
- forming a first electrical contact on a top side of the membrane, wherein the top side of the membrane is disposed distal the cavity, and wherein a bottom side of the membrane and the first electrical contact are doped with substantially a same dopant;
- forming a second electrical contact on the CMOS substrate;
- and
- connecting the second electrical contact to the first electrical contact.
3 more elements
An ultrasound structure, comprising:
- a complementary metal-oxide-semiconductor (CMOS) substrate having a cavity formed therein, the cavity surrounded by a lip region;
- a membrane disposed over the lip region to substantially seal the cavity;
- a first electrical contact on a top side of the membrane, wherein the top side of the membrane is disposed distal to the cavity, and wherein a bottom side of the membrane and the first electrical contact are doped with substantially a same dopant;
- and
- a second electrical contact on the CMOS substrate;
- wherein
- the second electrical contact and the first electrical contact are connected.
4 more elements
Dependencies are inferred from the claim text.