First protective film-forming sheet, method for forming first protective film, and method for manufacturing semiconductor chip

A method for forming a first protective film that protects a circuit surface and bumps of a semiconductor wafer having the bumps formed on the circuit surface, the method comprising:

• a step of attaching a curable resin layer of a first protective film-forming sheet formed by stacking a first pressure-sensitive adhesive layer on a first base material and stacking the curable resin layer on the first pressure-sensitive adhesive layer to the bump-provided surface of the semiconductor wafer;
• a step of heating the curable resin layer;
• a step of laminating the circuit surface and the bumps of the semiconductor wafer;
• a step of forming the first protective film by curing the curable resin layer;
• and
• a step of peeling the first base material and the first pressure-sensitive adhesive layer,
• wherein a sum of a thickness of the curable resin layer and a thickness of the first pressure-sensitive adhesive layer is 55% or more of a height of the bumps,
• the thickness of the curable resin layer is 10% to 50% of the height of the bumps,
• the thickness of the curable resin layer is 60 μm to 100 μm, and
• a wetting and spreading property of the curable resin layer at a temperature of 70° C., a load of 400 gf, and a retention time of five seconds is 150% to 180%.

A method for manufacturing a semiconductor chip, the method comprising:

• a step of attaching a curable resin layer of a first protective film-forming sheet formed by stacking a first pressure-sensitive adhesive layer on a first base material and stacking the curable resin layer on the first pressure-sensitive adhesive layer to a bump-provided surface of a semiconductor wafer having bumps formed on the circuit surface;
• a step of heating the curable resin layer;
• a step of laminating the circuit surface and the bumps of the semiconductor wafer;
• a step of forming a first protective film that protects the circuit surface and the bumps by curing the curable resin layer;
• a step of peeling the first base material and the first pressure-sensitive adhesive layer;
• and
• a step of dicing and dividing the semiconductor wafer together with the first protective film,
• wherein a sum of a thickness of the curable resin layer and a thickness of the first pressure-sensitive adhesive layer is 55% or more of a height of the bumps,
• the thickness of the curable resin layer is 10% to 50% of the height of the bumps,
• the thickness of the curable resin layer is 60 μm to 100 μm, and
• a wetting and spreading property of the curable resin layer at a temperature of 70° C., a load of 400 gf, and a retention time of five seconds is 150% to 180%.