Anti-stiction process for MEMS device

A method, the method comprising the steps of:

• providing a first wafer;
• treating the first wafer to form cavities and at least one oxide layer on a top surface of the first wafer using a first chemical vapor deposition process;
• providing a second wafer;
• bonding the second wafer on a top surface of the at least one oxide layer;
• treating the second wafer to form a first plurality of structures, wherein treating the second wafer further comprises etching a layer of germanium over the second wafer to form a second plurality of structures;
• and
• depositing a layer of Self-Assembling Monolayer (SAM) to a surface of a micro electro-mechanical system (MEMS) component using a second chemical vapor deposition process.