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US 10,510,876 B2Granted
Quantum doping method and use in fabrication of nanoscale electronic devices
OwnerAnatoly Feygensoninventor
Life of this patent
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Abstract
A novel doping technology for semiconductor wafers has been developed, referred to as a “quantum doping” process that permits the deposition of only a fixed, controlled number of atoms in the form of a monolayer in a substitutional condition where only unterminated surface bonds react with the dopant, thus depositing only a number of atoms equal to the atomic surface density of the substrate material. This technique results in providing a “quantized” set of possible dopant concentration values that depend only on the additional number of layers of substrate material formed over the single layer of dopant atoms.
Claims9
A semiconductor device comprising
- a substrate formed of a semiconductor material having a crystallographic orientation selected from the group consisting of <100>, <110>, and <111>, the substrate having a surface layer of atoms with a fixed number of unterminated bonds equal to an atomic surface density defined by the selected crystallographic orientation;
- a single atomic layer of atoms of a dopant material attached to the surface layer in a self-limiting process that terminates the fixed number of unterminated bonds and creates a layer of dopant atoms of the same atomic surface density and having the same fixed number of unterminated bonds as the substrate surface layer;
- and
- a plurality of N atomic layers of the semiconductor material disposed over the single atomic layer of atoms of dopant material, the value of N selected to create a specific volume dopant density equal to 1/N*(the atomic surface density divided by a known lattice spacing associated with the selected crystallographic orientation).
1 more element
Dependencies are inferred from the claim text.