Organic photoelectronic device and image sensor and electronic device

An organic photoelectronic device comprising:

• a first electrode;
• a first photoelectronic conversion layer on the first electrode, the first photoelectronic conversion layer including a p-type semiconductor and an n-type semiconductor at a first composition ratio (p1/n1), the first composition ratio (p1/n1) being greater than about 1.5 and less than about 3.5;
• and
• a second photoelectronic conversion layer on the first photoelectronic conversion layer, the second photoelectronic conversion layer including the p-type semiconductor and the n-type semiconductor at a second composition ratio (p2/n2), the second composition ratio (p2/n2) being about 0.8 to about 1.2,
• wherein the p-type semiconductor is a light-absorbing material configured to selectively absorb green light having a maximum absorption wavelength in about 520 nm to about 580 nm and is represented by Chemical Formula 1:
• wherein, in Chemical Formula 1,
• X is Se, Te, SO, SO2, or SiRaRb,
• EDG is an electron donating group,
• EAG is an electron accepting group, and
• each of R1, R2, Ra, and Rb are independently hydrogen or a monovalent substituent, and
• the n-type semiconductor is fullerene or a fullerene derivative.

An organic photoelectronic device, comprising:

• a first electrode and a second electrode facing each other;
• and
• first and second photoelectronic conversion layers between the first electrode and the second electrode, each of the first and second photoelectronic conversion layers including a p-type semiconductor and an n-type semiconductor in a composition ratio (p/n), the composition ratio (p/n) of one of the first and second photoelectronic conversion layers where p>n,
• wherein the p-type semiconductor is a light-absorbing material configured to selectively absorb green light having a maximum absorption wavelength in about 520 nm to about 580 nm and is represented by Chemical Formula 1:
• wherein, in Chemical Formula 1,
• X is Se, Te, SO, SO2, or SiRaRb,
• EDG is an electron donating group,
• EAG is an electron accepting group, and
• each of R1, R2, Ra, and Rb are independently hydrogen or a monovalent substituent, and
• the n-type semiconductor is fullerene or a fullerene derivative.