# US 10,504,948 B2 · Elevated pocket pixels, imaging devices and systems including the same and method of forming the same

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- Number: US 10,504,948 B2
- Document ID: US10504948B2
- Status: Granted
- Kind: B2
- Application number: 16/054,763
- Filed: 2018-08-03
- Published: 2018-11-29
- Granted: 2019-12-10
- Earliest claimed: 2007-01-24
- Assignees: Micron Technology, Inc.
- Applicants: Micron Technology, Inc.
- Inventors: Salman Akram
- Web page: https://patentgrep.com/patent/US10504948B2

## CPC

- H10F 39/8027: {Geometry of the photosensitive area}
- H10F 39/014: {of CMOS image sensors}
- H10F 39/016: {of thin-film-based image sensors}
- H10F 39/024: {of coatings or optical elements}
- H10F 39/026: {Wafer-level processing}
- H10F 39/12: Image sensors
- H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F 39/182: {Colour image sensors}
- H10F 39/1825: {Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures}
- H10F 39/80: {Constructional details of image sensors}
- H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes}
- H10F 39/8023: {Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery}
- H10F 39/8053: {Colour filters}
- H10F 39/8063: {Microlenses}
- H10F 39/8067: {Reflectors}
- H10F 71/121: {The active layers comprising only Group IV materials}
- H10F 77/122: comprising only Group IV materials
- H10F 77/1223: characterised by the dopants
- H10F 77/14: Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F 77/147: {Shapes of bodies}
- H10F 77/1662: {including only Group IV materials}
- H10F 77/206: {for devices having potential barriers}
- H10F 77/331: {for filtering or shielding light, e.g. multicolour filters for photodetectors}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems.

## Claims

### Claim 1

A pixel cell, comprising:
a photosensor formed from a substrate having a first conductivity type and a doped region having a second conductivity type; and
a raised photosensitive region formed completely above a top surface of the substrate,
wherein the raised photosensitive region includes—
an indentation feature in an upper surface of the raised photosensitive region,
an epitaxial layer formed on the top surface of the substrate,
a hydrogenated amorphous silicon layer formed above the epitaxial layer, and
a metal conductive layer between the epitaxial layer and the hydrogenated amorphous silicon layer.

### Claim 2 (depends on 1)

The pixel cell of claim 1, further comprising:
a floating diffusion region;
a transfer transistor gate for transferring charge accumulated at the photosensor to the floating diffusion region; and
a reset transistor gate.

### Claim 3 (depends on 1)

The pixel cell of claim 1, wherein—
the epitaxial layer has the first conductivity type;
the hydrogenated amorphous silicon layer has the second conductivity type, and
the epitaxial layer and the hydrogenated amorphous silicon layer form a p-n junction or a n-p junction above the top surface of the substrate.

### Claim 4 (depends on 1)

The pixel cell of claim 1, wherein the raised photosensitive region further comprises an upper electrode layer formed above the hydrogenated amorphous silicon layer.

### Claim 5 (depends on 4)

The pixel cell of claim 4, further comprising:
a color filter array formed in the indentation feature of the raised photosensitive region above the upper electrode layer; and
a microlens formed above the color filter array.

### Claim 6 (depends on 1)

The pixel cell of claim 1, wherein the indentation feature includes curved or slanted sidewalls such that the indentation feature is u-shaped or v-shaped, respectively, and wherein the raised photosensitive region is configured to—
absorb a first portion of light radiation incident on the indentation feature;
reflect a second portion of the light radiation at a first location to a second location of the raised photosensitive region using the indentation feature; and
absorb at least some of the second portion of the light radiation at the second location of the raised photosensitive region.

### Claim 7 (depends on 6)

The pixel cell of claim 6, wherein the pixel cell is a first pixel cell in a series of pixel cells, and wherein the curved or slanted sidewalls of the indentation feature of the first pixel cell are positioned such that any scattered light is directed to other pixel cells in the series of pixel cells that are not read while the first pixel cell is read.

### Claim 8 (depends on 1)

The pixel cell of claim 1, wherein the raised photosensitive region is a first raised photosensitive region in a series of raised photosensitive regions of the pixel cell.

### Claim 9 (depends on 1)

The pixel cell of claim 1, wherein the first conductivity type is a p-conductivity type.

### Claim 10 (depends on 1)

The pixel cell of claim 1, further comprising at least one trench isolation region formed in the raised photosensitive region and/or in the substrate, wherein the at least one isolation trench is filled with an insulating material such that the at least one isolation trench electrically isolates the raised photosensitive region and/or the pixel cell.

### Claim 11

A pixel cell, comprising:
a photosensor formed from a substrate having a first conductivity type and a doped region having a second conductivity type; and
a raised photosensitive region formed completely above a top surface of the substrate,
wherein the raised photosensitive region includes—
an indentation feature in an upper surface of the raised photosensitive region, and
a color filter array formed in the indentation feature.

### Claim 12 (depends on 11)

The pixel cell of claim 11, wherein the raised photosensitive region further comprises—
an epitaxial layer formed on the top surface of the substrate, the epitaxial layer having the first conductivity type; and
a hydrogenated amorphous silicon layer formed above the epitaxial layer, the hydrogenated amorphous silicon layer having the second conductivity type, wherein the epitaxial layer and the hydrogenated amorphous silicon layer form a p-n junction or a n-p junction above the top surface of the substrate.

### Claim 13 (depends on 12)

The pixel cell of claim 12, wherein the raised photosensitive region further comprises—
a metal conductive layer between the epitaxial layer and the hydrogenated amorphous silicon layer; and
an upper electrode layer formed above the hydrogenated amorphous silicon layer and beneath the color filter array.

### Claim 14 (depends on 11)

The pixel cell of claim 11, wherein the raised photosensitive region further comprises a microlens formed above the color filter array.

### Claim 15 (depends on 11)

The pixel cell of claim 11, wherein the raised photosensitive region is configured to—
absorb a first portion of light radiation incident on the indentation feature;
reflect a second portion of the light radiation at a first location to a second location of the raised photosensitive region using the indentation feature; and
absorb at least some of the second portion of the light radiation at the second location of the raised photosensitive region.

### Claim 16 (depends on 11)

The pixel cell of claim 11, wherein the indentation feature of the raised photosensitive region includes slanted or curved sidewalls such that the indentation feature is v-shaped or u-shaped, respectively.

### Claim 17 (depends on 11)

The pixel cell of claim 11, wherein the raised photosensitive region is a first raised photosensitive region in a series of raised photosensitive regions of the pixel cell.

### Claim 18 (depends on 11)

The pixel cell of claim 11, wherein the first conductivity type is a p-conductivity type.

### Claim 19

An imaging system, comprising:
a pixel array having a plurality of pixel cells arranged in a predetermined number of columns and rows, wherein each pixel cell in the plurality of pixel cells includes a photosensor formed from a substrate having a first conductivity type and a doped region having a second conductivity type;
a plurality of row and column lines electrically coupled to corresponding pixel cells in the plurality of pixel cells; and
timing and control circuitry configured to read out the charge accumulated in select pixel cells in the plurality of pixel cells via the plurality of row and column lines,
wherein at least one pixel cell in the plurality of pixel cells further includes a raised photosensitive region formed completely above a top surface of the substrate, and
wherein the raised photosensitive region includes—
an indentation feature in an upper surface of the raised photosensitive region,
an epitaxial layer formed on the top surface of the substrate,
a hydrogenated amorphous silicon layer formed above the epitaxial layer, and
a metal conductive layer between the epitaxial layer and the hydrogenated amorphous silicon layer.

### Claim 20 (depends on 19)

The imaging system of claim 19 further comprising:
a sample and hold circuit;
a differential amplifier configured to produce one or more differential signals;
an analog to digital converter configured to convert the one or more differential signals into one or more digital signals; and
an image processor configured to form a digital image from the one or more digital signals.