# US 10,504,941 B2 · Preparation method for array substrate

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- Number: US 10,504,941 B2
- Document ID: US10504941B2
- Status: Granted
- Kind: B2
- Application number: 15/657,413
- Filed: 2017-07-24
- Published: 2018-01-25
- Granted: 2019-12-10
- Earliest claimed: 2016-07-25
- Assignees: Boe Technology Group Co., Ltd.; Beijing Boe Display Technology Co., Ltd.
- Applicants: Boe Technology Group Co., Ltd.; Beijing Boe Display Technology Co., Ltd.
- Inventors: Liangliang Li; Huibin Guo; Shoukun Wang; Yuchun Feng; Yao Liu
- Web page: https://patentgrep.com/patent/US10504941B2

## CPC

- G02F 1/136286: {Wiring, e.g. gate line, drain line}
- H10D 86/01: Manufacture or treatment
- H10D 86/021: {of multiple TFTs}
- H10D 86/0212: {comprising manufacture, treatment or coating of substrates}
- H10D 86/411: {characterised by materials, geometry or structure of the substrates}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/60: wherein the TFTs are in active matrices
- H10K 59/8792: {comprising light absorbing layers, e.g. black layers}
- H10P 14/6328: {Deposition from the gas or vapour phase}
- H10P 14/665: {Porous materials}
- H10P 14/6903: {containing silicon}
- H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
- H10W 20/074: {of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers}
- G02F 1/13629: {Multilayer wirings}
- G02F 1/136295: {Materials; Compositions; Manufacture processes}
- G02F 2201/38: Anti-reflection arrangements
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

The present invention provides an array substrate comprising a substrate, a metal conductive film layer, and an anti-reflective film layer located between the substrate and the metal conductive film layer, and a method for manufacturing the same, as well as a display device. The method comprises step S1: forming an anti-reflective film layer on a substrate by adjusting the reaction power and/or reactive gas flow during the formation of film by the chemical vapor deposition process; and step S2: forming a metal conductive film layer on the substrate finished in step S1. Through the preparation method of the array substrate, the anti-reflective film layer can have a sand-like granulation structure, such that light reflected from the metal conductive film layer can be blocked, thereby weakening or avoiding the light reflected from the surface of the metal conductive film layer, further improving the display effect of the array substrate.

## Claims

### Claim 1

A method for manufacturing an array substrate, characterized by comprising:
step S1: forming an anti-reflective film layer on a substrate, wherein the anti-reflective film layer has a sand-like granulation structure by adjusting the reaction power and/or reactive gas flow during the chemical vapor deposition process; and
step S2: forming a metal conductive film layer on the anti-reflective film layer.

### Claim 2 (depends on 1)

The method for manufacturing an array substrate according to claim 1, characterized in that, the step “forming an anti-reflective film layer on a substrate by adjusting the reaction power during the chemical vapor deposition process” includes a first stage and a second stage, in which the first stage and the second stage are carried out continuously, and the reaction power of the first stage is higher than that of the second stage by 50% or more, and alternatively the reaction power of the first stage is lower than that of the second stage by 50% or more.

### Claim 3 (depends on 1)

The method for manufacturing an array substrate according to claim 1, characterized in that, the step “forming an anti-reflective film layer on a substrate by adjusting the reactive gas flow during the chemical vapor deposition process” includes a first stage and a second stage, in which the first stage and the second stage are carried out continuously, and the reactive gas flow of the first stage is higher than that of the second stage by 20% or more, and alternatively the reactive gas flow of the first stage is lower than that of the second stage by 50% or more.

### Claim 4 (depends on 2)

The method for manufacturing an array substrate according to claim 2, characterized in that, the first stage is within 1 to 3 seconds from the beginning of the deposition of the anti-reflective film layer.

### Claim 5 (depends on 3)

The method for manufacturing an array substrate according to claim 3, characterized in that, the first stage is within 1 to 3 seconds from the beginning of the deposition of the anti-reflective film layer.

### Claim 6 (depends on 1)

The method for manufacturing an array substrate according to claim 1, characterized in that, the anti-reflective film layer comprises a silicon nitride film layer an amorphous silicon film layer.

### Claim 7 (depends on 6)

The method for manufacturing an array substrate according to claim 6, characterized in that, when forming the amorphous silicon film layer, the step S1 further comprises: doping the amorphous silicon film layer so as to darken the color of the amorphous silicon film layer.

### Claim 8 (depends on 1)

The method for manufacturing an array substrate according to claim 1, characterized in that, it further comprises a step of forming an indium tin oxide film layer and performing atomization of the indium tin oxide film layer before or after the step S1.

### Claim 9 (depends on 8)

The method for manufacturing an array substrate according to claim 8, characterized in that, it further comprises S3: performing a patterning process of the anti-reflective film layer, the indium tin oxide film layer and the metal conductive film layer, so as to form a pattern including the metal conductive layer, the anti-reflective layer and the indium tin oxide layer.

### Claim 10 (depends on 1)

An array substrate manufactured by the method according to claim 1, comprising a substrate and a metal conductive layer, characterized in that, it further comprises an anti-reflective layer located between the substrate and the metal conductive layer, and the anti-reflective layer has a plurality of sand-like granulation structures.

### Claim 11 (depends on 10)

The array substrate according to claim 10, characterized in that, the anti-reflective layer and the metal conductive layer are overlapped completely, and the anti-reflective layer comprises a silicon nitride layer or an amorphous silicon layer.

### Claim 12 (depends on 11)

The array substrate according to claim 11, characterized in that, it further comprises an atomized indium tin oxide layer, which is located between the anti-reflective layer and the metal conductive layer or between the anti-reflective layer and the substrate.

### Claim 13 (depends on 10)

A display device, characterized by comprising the array substrate according to claim 10.

### Claim 14 (depends on 13)

The display device according to claim 13, characterized in that, it further comprises a color filter substrate and back light, wherein the array substrate and the color filter substrate are aligned, and the back light is set on the side of the color filter substrate away from the array substrate.

### Claim 15 (depends on 1)

The method for manufacturing an array substrate according to claim 1, characterized in that, the anti-reflective film layer comprises a silicon nitride film layer and an amorphous silicon film layer.

### Claim 16 (depends on 10)

The array substrate according to claim 10, characterized in that, the anti-reflective layer and the metal conductive layer are overlapped completely, and the anti-reflective layer comprises a silicon nitride layer and an amorphous silicon layer.