# US 10,504,940 B2 · Thin film transistor, method for manufacturing the same, array substrate and display device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,504,940 B2 - Document ID: US10504940B2 - Status: Granted - Kind: B2 - Application number: 15/820,121 - Filed: 2017-11-21 - Published: 2018-10-25 - Granted: 2019-12-10 - Earliest claimed: 2017-04-25 - Assignees: Boe Technology Group Co., Ltd.; Chongqing Boe Optoelectronics Technology Co., Ltd. - Applicants: BOE Technology Group Co., Ltd.; Chongqing BOE Optoelectronics Technology Co., Ltd. - Inventors: Xiaoyuan Wang; Ni Yang; Yan Fang; Zhijian Qi; Shaoru Li - Web page: https://patentgrep.com/patent/US10504940B2 ## CPC - H10D 86/60: wherein the TFTs are in active matrices - H10D 30/6729: {characterised by the electrodes} - H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors} - H10D 86/021: {of multiple TFTs} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A thin film transistor comprises a gate, a gate insulating layer, an active layer, a source electrode and a drain electrode. The drain electrode comprises a first sub-drain electrode and at least one second sub-drain electrode. A first portion of the active layer between the first sub-drain electrode and the source electrode and a second portion of the active layer between each of the at least one second sub-drain electrode and the source electrode are used for forming different portions of a primary channel, respectively. The first sub-drain electrode is a signal input electrode, and a third portion of the active layer between the first sub-drain electrode and each of the at least one second sub-drain electrode is used for forming an auxiliary channel. A channel length of the auxiliary channel is less than or equal to a channel length of the primary channel. ## Claims ### Claim 1 A thin film transistor, comprising a gate, a gate insulating layer, an active layer, a source electrode and a drain electrode, wherein, the drain electrode comprises a first sub-drain electrode and at least one second sub-drain electrode that are physically detached from one another, and a first portion of the active layer between the first sub-drain electrode and the source electrode, and a second portion of the active layer between each of the at least one second sub-drain electrode and the source electrode are used for forming different portions of a primary channel, respectively; the first sub-drain electrode is a signal input electrode, and a third portion of the active layer between the first sub-drain electrode and each of the at least one second sub-drain electrode is used for forming an auxiliary channel, a channel length of the auxiliary channel being less than or equal to a channel length of the primary channel. ### Claim 2 (depends on 1) The thin film transistor according to claim 1, wherein, the at least one second sub-drain electrode comprises a plurality of second sub-drain electrodes. ### Claim 3 (depends on 1) The thin film transistor according to claim 1, wherein, the channel length of the auxiliary channel is about 2 μm to 5 μm. ### Claim 4 (depends on 1) The thin film transistor according to claim 1, wherein, a width of a side of each of the at least one second sub-drain electrode close to the primary channel is greater than or equal to a width of another side of that away from the primary channel. ### Claim 5 (depends on 4) The thin film transistor according to claim 4, wherein, an included angle between the auxiliary channel and the primary channel is about 30° to 60°. ### Claim 6 (depends on 4) The thin film transistor according to claim 4, wherein, an included angle between the auxiliary channel and the primary channel is about 90°. ### Claim 7 (depends on 1) The thin film transistor according to claim 1, wherein, the primary channel is of a U-shaped structure comprising a bent portion and two extended portions connected to two ends of the bent portion respectively; the drain electrode comprises two strip-shaped arms corresponding to the two extended portions and a connecting arm corresponding to the bent portion; two ends of the connecting arm are configured to connect to the two strip-shaped arms, respectively; and, the auxiliary channel is formed in a portion of the drain electrode beyond the connecting arm. ### Claim 8 (depends on 7) The thin film transistor according to claim 7, wherein, the auxiliary channel is formed at a junction of each of the two strip-shaped arms with the connecting arm. ### Claim 9 An array substrate, comprising a substrate and a plurality of thin film transistors arranged on the substrate, wherein, each of the plurality of thin film transistors comprises a gate, a gate insulating layer, an active layer, a source electrode and a drain electrode; the drain electrode comprises a first sub-drain electrode and at least one second sub-drain electrode are physically detached from one another, and a first portion of the active layer between the first sub-drain electrode and the source electrode, and a second portion of the active layer between each of the at least one second sub-drain electrode and the source electrode are used for forming different portions of a primary channel, respectively; and the first sub-drain electrode is a signal input electrode, and a third portion of the active layer between the first sub-drain electrode and each of the at least one second sub-drain electrode is used for forming an auxiliary channel, a channel length of the auxiliary channel being less than or equal to a channel length of the primary channel. ### Claim 10 A display device, comprising a backlight module and an array substrate arranged on the backlight module, wherein, the array substrate comprises a substrate and a plurality of thin film transistors arranged on the substrate; each of the plurality of thin film transistors comprises a gate, a gate insulating layer, an active layer, a source electrode and a drain electrode; the drain electrode comprises a first sub-drain electrode and at least one second sub-drain electrode that are physically detached from one another, and a first portion of the active layer between the first sub-drain electrode and the source electrode, and a second portion of the active layer between each of the at least one second sub-drain electrode and the source electrode are used for forming different portions of a primary channel, respectively; and the first sub-drain electrode is a signal input electrode, and a third portion of the active layer between the first sub-drain electrode and each of the at least one second sub-drain electrode is used for forming an auxiliary channel, a channel length of the auxiliary channel being less than or equal to a channel length of the primary channel. ### Claim 11 (depends on 1) A method for manufacturing the thin film transistor according to claim 1, comprising: forming, on a substrate, a first conducting layer comprising the gate, the gate insulating layer, the active layer, and a second conducting layer comprising the source electrode and the drain electrode, wherein the drain electrode comprises the first sub-drain electrode and at least one second sub-drain electrode that are physically detached from one another, and the first portion of the active layer between the first sub-drain electrode and the source electrode and the second portion of the active layer between each of the at least one second sub-drain electrode and the source electrode are used for forming different portions of the primary channel, respectively; the first sub-drain electrode is a signal input electrode, and the third portion of the active layer between the first sub-drain electrode and each of the at least one second sub-drain electrode is used for forming the auxiliary channel, the channel length of the auxiliary channel being less than or equal to the channel length of the primary channel. ### Claim 12 (depends on 1) The thin film transistor according to claim 1, wherein the at least one second sub-drain electrode includes one second sub-drain electrode, and the third portion of the active layer between the first sub-drain electrode and the second sub-drain electrode is used for forming the auxiliary channel. ### Claim 13 (depends on 2) The thin film transistor according to claim 2, wherein the plurality of second sub-drain electrodes include two second sub-drain electrodes, the thin film transistor is a thin film transistor of an I-shaped structure, and the two second sub-drain electrodes are located on two opposite sides of the first sub-drain electrode respectively. ### Claim 14 (depends on 13) The thin film transistor according to claim 13, wherein, a width of a side of each of the two second sub-drain electrode close to the primary channel is greater than or equal to a width of another side of that away from the primary channel. ### Claim 15 (depends on 11) The method for manufacturing the thin film transistor according to claim 11, wherein, a half tone mask is used to form the primary channel and the auxiliary channel.