# US 10,504,928 B2 · Display panel

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- Number: US 10,504,928 B2
- Document ID: US10504928B2
- Status: Granted
- Kind: B2
- Application number: 15/252,262
- Filed: 2016-08-31
- Published: 2017-04-13
- Granted: 2019-12-10
- Earliest claimed: 2015-10-12
- Assignees: Innolux Corporation
- Applicants: InnoLux Corporation
- Inventors: Yi-Ling Yu; Chun-Liang Lin
- Web page: https://patentgrep.com/patent/US10504928B2

## CPC

- H10D 86/60: wherein the TFTs are in active matrices
- G02F 1/13454: {Drivers integrated on the active matrix substrate (G02F1/136277 takes precedence)}
- H10D 30/674: {characterised by the active materials}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10K 59/1213: {the pixel elements being TFTs}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A display panel includes a substrate having a display region and a border region adjacent to the display region; a first transistor disposed on the border region and including an active layer on the substrate; and a transparent conductive layer disposed on the border region and including an opening disposed on the active layer, wherein an opening area of the opening is larger than an area of the active layer.

## Claims

### Claim 1

A display panel, comprising:
a substrate comprising a display region and a border region adjacent to the display region;
a first transistor disposed on the border region and comprising an active layer and a first conducting electrode on the substrate, wherein the first conducting electrode electrically connects to the active layer; and
a conductive layer disposed on the border region and comprising an opening, wherein the opening exposes the active layer and an area of the opening is larger than an area of the active layer, and the conductive layer partially overlaps the first conducting electrode in a top view of the border region,
wherein the opening comprises a first edge and a second edge, and an extension direction of the first edge is different from an extension direction of the second edge; the active layer comprises a fifth edge and a sixth edge, and the fifth edge and the sixth edge are substantially parallel to the first edge and the second edge respectively; wherein the fifth edge locates between the first edge and the active layer, and the sixth edge locates between the second edge and the active layer; wherein a minimum distance between the first edge and the fifth edge is different from a minimum distance between the second edge and the sixth edge.

### Claim 2 (depends on 1)

The display panel of claim 1, wherein the first transistor electrically connects to a first pad through a first transmission line, and a line width of the first transmission line is smaller than a width of the first pad.

### Claim 3 (depends on 2)

The display panel of claim 2, further comprising a second transistor disposed on the border region and electrically connecting to a second pad through a second transmission line, wherein a line width of the second transmission line is smaller than a width of the second pad, and the second pad electrically connects to the first pad.

### Claim 4 (depends on 1)

The display panel of claim 1, wherein the first transistor further comprises:
an insulating layer disposed on the active layer and comprising a via; and
a first conducting electrode disposed on the insulating layer and electrically connecting to the active layer through the via, wherein a maximum length of the via in a width extension direction of a channel of the active layer is longer than another maximum length of the via in a length extension direction thereof.

### Claim 5 (depends on 1)

The display panel of claim 1, wherein the first transistor further comprises:
a gate electrode disposed on the substrate, wherein the active layer is disposed on the gate electrode, the gate electrode comprises a third edge, and an extension direction of the third edge is substantially identical to a length extension direction of a channel of the active layer;
an insulating layer disposed on the active layer and comprising a via; and
a first conducting electrode disposed on the insulating layer and electrically connecting to the active layer through the via,
wherein the first conducting electrode at a position above the via has a first width, the first conducting electrode at another position above the third edge has a second width, and the first width is larger than the second width.

### Claim 6 (depends on 1)

The display panel of claim 1, wherein the active layer comprises a metal oxide.

### Claim 7 (depends on 1)

The display panel of claim 1, wherein the border region is surrounding the display region.

### Claim 8

A display panel, comprising:
a substrate comprising a display region and a border region adjacent to the display region;
a first transistor disposed on the border region and comprising an active layer and a first conducting electrode on the substrate, wherein the first conducting electrode electrically connects to the active layer; and
a conductive layer disposed on the border region and comprising an opening, wherein the opening exposes the active layer and an area of the opening is larger than an area of the active layer, and the conductive layer partially overlaps the first conducting electrode in a top view of the border region;
wherein the first transistor further comprises a gate electrode disposed on the substrate, the opening comprises a first edge and a second edge, and an extension direction of the first edge is different from an extension direction of the second edge; the gate electrode comprises a third edge and a fourth edge, and the third edge and the fourth edge are substantially parallel to the first edge and the second edge respectively; wherein the third edge locates between the first edge and the active layer, and the fourth edge locates between the second edge and the active layer; wherein a minimum distance between the first edge and the third edge is different from a minimum distance between the second edge and the fourth edge.