# US 10,504,920 B2 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,504,920 B2 - Document ID: US10504920B2 - Status: Granted - Kind: B2 - Application number: 13/482,349 - Filed: 2012-05-29 - Published: 2012-12-06 - Granted: 2019-12-10 - Earliest claimed: 2011-06-01 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Hideki Matsukura - Inventors: Hideki Matsukura - Web page: https://patentgrep.com/patent/US10504920B2 ## CPC - H10D 86/201: {the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence)} - H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors} - H10D 86/60: wherein the TFTs are in active matrices - H10D 84/811: {Combinations of field-effect devices and one or more diodes, capacitors or resistors} - H10D 84/813: {Combinations of field-effect devices and capacitor only} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract An area occupied by a circuit element having at least a capacitor and a transistor is reduced in a semiconductor device. In a semiconductor device including a first transistor, a second transistor, and a capacitor, the first transistor and the capacitor are provided over the second transistor. Then, a common electrode, which serves as one of a source and a drain of the first transistor and one electrode of the capacitor, is provided. In addition, the other electrode of the capacitor is provided over the common electrode. ## Claims ### Claim 1 A semiconductor device comprising: a first transistor comprising a semiconductor layer, a gate, a first electrode, and an insulating layer between the semiconductor layer and the gate; a second transistor; and a capacitor comprising the first electrode, a second electrode, and the insulating layer between the first electrode and the second electrode, wherein the first electrode is a common electrode serving as one of a source and a drain of the first transistor and the first electrode of the capacitor, wherein the common electrode is electrically connected to a gate of the second transistor through an opening provided in the semiconductor layer of the first transistor, wherein the common electrode and the second transistor partly overlap with each other, and wherein the second electrode is over the common electrode. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the common electrode is electrically connected to the gate of the second transistor through the opening and a second opening provided in the semiconductor layer of the first transistor. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein the semiconductor layer of the first transistor and a semiconductor layer of the second transistor overlap with each other. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, wherein the second electrode overlaps with the common electrode and the semiconductor layer of the first transistor. ### Claim 5 (depends on 1) The semiconductor device according to claim 1, wherein the second transistor comprises a gate insulating film, and wherein the second electrode is over the gate insulating film. ### Claim 6 A semiconductor device comprising: a first transistor comprising a semiconductor layer, a gate, a first electrode, and an insulating layer between the semiconductor layer and the gate; a second transistor; and a capacitor comprising the first electrode, a second electrode, and the insulating layer between the first electrode and the second electrode, wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, wherein the first electrode and the second transistor partly overlap with each other, wherein the one of the source and the drain of the first transistor serves as the first electrode of the capacitor, wherein the second electrode is over the first electrode, wherein the gate of the first transistor is electrically connected to the one of the source and the drain of the first transistor using a wiring provided over the second electrode, and wherein the wiring is electrically connected to the one of the source and the drain of the first transistor through an opening provided in the second electrode. ### Claim 7 (depends on 6) The semiconductor device according to claim 6, wherein the one of the source and the drain of the first transistor is electrically connected to the one of the source and the drain of the second transistor through an opening provided in the semiconductor layer of the first transistor. ### Claim 8 (depends on 6) The semiconductor device according to claim 6, wherein the one of the source and the drain of the first transistor is electrically connected to the one of the source and the drain of the second transistor through a plurality of openings provided in the semiconductor layer of the first transistor. ### Claim 9 (depends on 6) The semiconductor device according to claim 6, wherein the semiconductor layer of the first transistor overlaps with a semiconductor layer of the second transistor. ### Claim 10 (depends on 6) The semiconductor device according to claim 6, wherein the second electrode overlaps with the one of the source and the drain of the first transistor and the semiconductor layer of the first transistor. ### Claim 11 A semiconductor device comprising: a transistor comprising a common electrode, a gate, and a semiconductor layer; a capacitor comprising the common electrode and an electrode over the common electrode; and a wiring over the electrode, wherein the gate of the transistor is electrically connected to the wiring, wherein the wiring is electrically connected to the common electrode through an opening provided in the electrode, and wherein the opening overlaps with the semiconductor layer. ### Claim 12 (depends on 11) The semiconductor device according to claim 11, further comprising an insulating layer over the electrode, wherein the common electrode is in contact with the semiconductor layer, wherein the electrode is over the common electrode, and wherein the wiring is over the insulating layer. ### Claim 13 (depends on 11) The semiconductor device according to claim 11, wherein the common electrode is in contact with the semiconductor layer, and wherein the common electrode serves as one of a source and a drain of the transistor.