# US 10,504,894 B2 · Semiconductor device

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- Number: US 10,504,894 B2
- Document ID: US10504894B2
- Status: Granted
- Kind: B2
- Application number: 15/370,463
- Filed: 2016-12-06
- Published: 2017-06-08
- Granted: 2019-12-10
- Earliest claimed: 2015-12-07
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Seung Hyun Song; Yoon Suk Kim; Kyu Baik Chang; Ui Hui Kwon; Yo Han Kim; Jong Chol Kim; Chang Wook Jeong
- Web page: https://patentgrep.com/patent/US10504894B2

## CPC

- H10D 84/834: {comprising FinFETs}
- H10D 30/62: Fin field-effect transistors [FinFET]
- H10D 30/6213: {having rounded corners}
- H10D 62/115: {Dielectric isolations, e.g. air gaps}
- H10D 84/0153: {using gate cut processes}
- H10D 84/853: {comprising FinFETs}
- H10D 89/10: Integrated device layouts
- H10D 30/792: {comprising applied insulating layers, e.g. stress liners}
- H10D 84/0135: {Manufacturing their gate conductors}
- H10D 84/0151: {Manufacturing their isolation regions}
- H10D 84/0158: {the components including FinFETs}
- H10D 84/0172: {Manufacturing their gate conductors}
- H10D 84/0188: {Manufacturing their isolation regions}
- H10D 84/0193: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor device includes a fin-type pattern extending in a first direction, a device isolation film surrounding the fin-type pattern, while exposing an upper portion of the fin-type pattern, a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction, a gate isolation film isolating the gate electrode in the second direction, and including a first material and on the device isolation film, an interlayer insulating film filling a side surface of the fin-type pattern and including a second material different from the first material.

## Claims

### Claim 1

A semiconductor device, comprising:
a fin-type pattern extending in a first direction;
a device isolation film surrounding the fin-type pattern and exposing an upper portion of the fin-type pattern;
a gate electrode extending on the device isolation film and the fin-type pattern in a second direction intersecting the first direction;
a gate isolation film isolating portions of the gate electrode in the second direction, and comprising a first material; and
on the device isolation film, an interlayer insulating film on a side surface of the gate electrode and comprising a second material different from the first material,
wherein a stress characteristic of the gate isolation film is different from a stress characteristic of the interlayer insulating film, and
wherein the gate isolation film has a compressive stress characteristic, and the interlayer insulating film has a tensile stress characteristic.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein the fin-type pattern comprises a first fin-type pattern and a second fin-type pattern spaced apart from each other in the second direction, and
the gate isolation film is between the first and second fin-type patterns, and extends in the first direction.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein the gate electrode comprises first to third gate electrodes spaced apart from one another in the first direction, and
the gate isolation film isolates the second gate electrode without contacting the first and third gate electrodes.

### Claim 4 (depends on 1)

The semiconductor device of claim 1, further comprising a first trench within the device isolation film in the first direction, and isolating portions of the gate electrode in the second direction, wherein the gate isolation film fills the first trench.

### Claim 5 (depends on 4)

The semiconductor device of claim 4, wherein the gate isolation film comprises:
an outer gate isolation film conformally on a bottom surface and a side surface of the first trench, and
an inner gate isolation film on the outer gate isolation film, entirely filling the first trench.

### Claim 6 (depends on 1)

The semiconductor device of claim 1, wherein the gate isolation film comprises first and second gate isolation films spaced apart from each other in the second direction, and
the fin-type pattern is between the first and second gate isolation films.

### Claim 7 (depends on 6)

The semiconductor device of claim 6, further comprising:
a second trench between the fin-type pattern and the first gate isolation film, and
a third gate isolation film in the second trench.

### Claim 8

A semiconductor device, comprising:
a first gate electrode extending in a first direction;
a first gate isolation film isolating portions of the first gate electrode, and extending in a second direction intersecting the first direction;
a second gate isolation film isolating portions of the first gate electrode, extending in the second direction, and being spaced apart from the first gate isolation film in the first direction;
a first active region between the first and second gate isolation films; and
a third gate isolation film between the first active region and the first gate isolation film,
wherein the first and third gate isolation films being without an active region between the first and third gate isolation films.

### Claim 9 (depends on 8)

The semiconductor device of claim 8, wherein a length of the third gate isolation film in the second direction is shorter than a length of the first gate isolation film in the second direction.

### Claim 10 (depends on 8)

The semiconductor device of claim 8, further comprising a first interlayer insulating film on a side surface of the first gate electrode and comprising a first material.

### Claim 11 (depends on 8)

The semiconductor device of claim 8, further comprising second and third gate electrodes extending in the first direction and being positioned on opposite sides of the first gate electrode, respectively,
wherein the first gate isolation film isolates portions of the second and third gate electrodes.

### Claim 12 (depends on 11)

The semiconductor device of claim 11, further comprising:
a fin-type pattern protruding on a substrate, and extending in the second direction, and
a device isolation film surrounding a portion of a side surface of the fin-type pattern,
wherein the first to third gate electrodes are on the device isolation film and the fin-type pattern.

### Claim 13 (depends on 11)

The semiconductor device of claim 11, further comprising at least one fourth gate isolation film between the first active region and the second gate isolation film,
wherein the second and fourth gate isolation films being without an active region between the second and fourth gate isolation films.

### Claim 14 (depends on 11)

The semiconductor device of claim 11, wherein the third gate isolation film isolates portions of the first and third gate electrodes, and further comprises:
a first interlayer insulating film on side surfaces of the first to third gate electrodes, respectively,
a second interlayer insulating film on the first to third gate electrodes, the first interlayer insulating film, and the first to third gate isolation films, and
a first connect pattern passing through the second interlayer insulating film and electrically re-connecting the third gate electrode which is isolated by the third gate isolation film.

### Claim 15 (depends on 11)

The semiconductor device of claim 11, wherein the third gate isolation film isolates portions of the first gate electrode without isolating portions of the second and third gate electrodes.

### Claim 16 (depends on 15)

The semiconductor device of claim 15, further comprising, between the first and second gate isolation films, a fourth gate isolation film isolating portions of the second gate electrode without isolating portions the first and third gate electrodes, and
between the first and second gate isolation films, a fifth gate isolation film isolating portions of the third gate electrode without isolating portions of the first and second gate electrodes.

### Claim 17 (depends on 16)

The semiconductor device of claim 16, further comprising a first interlayer insulating film on side surfaces of the first to third gate electrodes, respectively,
a second interlayer insulating film on the first to third gate electrodes, the first interlayer insulating film, and the first to fifth gate isolation films, and
a first connect pattern passing through the second interlayer insulating film and electrically re-connecting the first gate electrode which is isolated by the third gate isolation film.

### Claim 18

A semiconductor device, comprising:
first and second gate electrodes extending in parallel with each other in a first direction, and being spaced apart from each other in a second direction intersecting the first direction;
a first gate isolation film extending in the second direction, isolating portions of the first gate electrode in the first direction, and isolating portions of the second gate electrode in the first direction;
a second gate isolation film extending in the second direction, isolating portions of the first gate electrode in the first direction, isolating portions of the second gate electrode in the first direction, and being spaced apart from the first gate isolation film in the first direction;
a third gate isolation film extending in the second direction, isolating portions of the first gate electrode in the first direction, and being between the first and second gate isolation films; and
a fourth gate isolation film extending in the second direction, isolating portions of the second gate electrode in the first direction, being between the first and second gate isolation films, and being entirely spaced apart from the third gate isolation film in the first direction and in the second direction.