# US 10,504,887 B2 · Electrostatic discharge protection device and method for forming the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,504,887 B2 - Document ID: US10504887B2 - Status: Granted - Kind: B2 - Application number: 15/275,030 - Filed: 2016-09-23 - Published: 2017-04-13 - Granted: 2019-12-10 - Earliest claimed: 2015-10-10 - Assignees: Semiconductor Manufacturing International (Beijing) Corporation; Semiconductor Manufacturing International (Shanghai) Corporation - Applicants: Semiconductor Manufacturing International (Beijing) Corporation; Semiconductor Manufacturing International (Shanghai) Corporation - Inventors: Yong Li - Web page: https://patentgrep.com/patent/US10504887B2 ## CPC - H10D 89/811: {using FETs as protective elements} - H10D 30/024: {of fin field-effect transistors [FinFET]} - H10D 30/0241: {doping of vertical sidewalls, e.g. using tilted or multi-angled implants} - H10D 30/6211: {having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates} - H10D 30/6212: {having fin-shaped semiconductor bodies having non-rectangular cross-sections} - H10D 62/151: {of IGFETs (of IGFETs having LDD or DDD structure H10D30/601; of thin film transistors H10D30/6713)} - H10D 84/0158: {the components including FinFETs} - H10D 84/038: {using silicon technology, e.g. SiGe} - H10D 84/834: {comprising FinFETs} - H10D 89/60: Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] - H10P 30/204: {into Group IV semiconductors} - H10P 30/21: {of electrically active species} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract The present disclosure provides a method for forming an electrostatic discharge (ESD) protection device, including: providing a substrate including an input region; forming a plurality of fins on the substrate in the input region; forming a well region, doped with first-type ions, in the plurality of fins and in the substrate; and forming an epitaxial layer on each fin in the input region. The method further includes: forming a drain region, doped with second-type ions, in a top portion of each fin and in the epitaxial layer; forming an extended drain region, doped with the second-type ions, in a bottom portion of each fin to connect to the drain region and in a portion of the substrate, in the input region; and forming a counter-doped region, doped with the first-type ions, in a portion of the substrate between two adjacent fins to insulate adjacent extended drain regions. ## Claims ### Claim 1 A method for forming an electrostatic discharge (ESD) protection device, comprising: providing a substrate including an input region; forming a plurality of fins on the substrate in the input region; forming a well region, doped with first-type ions, in the plurality of fins and in the substrate; forming an epitaxial layer on each fin in the input region; forming a drain region, doped with second-type ions, in a top portion of each fin and in the epitaxial layer; forming an extended drain region, doped with the second-type ions, in a bottom portion of each fin to connect to the drain region and in a portion of the substrate, in the input region; and forming a counter-doped region, doped with the first-type ions, in a portion of the substrate between two adjacent fins to insulate adjacent extended drain regions, wherein a PN junction is formed between the counter-doped region and the extended drain region. ### Claim 2 (depends on 1) The method according to claim 1, further comprising forming an insulating layer on the substrate, the insulating layer covering a portion of a sidewall of a fin, a top surface of the insulating layer being lower than the top surfaces of the plurality of fins. ### Claim 3 (depends on 2) The method according to claim 2, further comprising forming at least two grounding regions for grounding the ESD protection device, a plurality of fins being formed on the substrate in the grounding region. ### Claim 4 (depends on 1) The method according to claim 1, wherein the extended drain region is formed through a first ion implantation process, and the counter-doped region is formed through a second ion implantation process. ### Claim 5 (depends on 3) The method according to claim 3, wherein a first portion of a fin in the input region is connected to a second portion of the fin in the grounding region through a fin portion, and a gate structure is formed on a plurality of fin portions between the input region and the grounding region, the gate structure covering a top surface and a portion of a sidewall of fin portions. ### Claim 6 (depends on 5) The method according to claim 5, further comprising forming a source region in each fins in a grounding region and the source regions is doped with first-type ions or second-type ions. ### Claim 7 (depends on 6) The method according to claim 6, wherein when the source region is doped with the first-type ions, one grounding region is located at one of two sides of the input region. ### Claim 8 (depends on 3) The method according to claim 3, wherein fins in the input region are separated from fins in a grounding region. ### Claim 9 (depends on 8) The method according to claim 8, further comprising forming a source region in each fin in a grounding region. ### Claim 10 (depends on 9) The method according to claim 9, wherein when the source region is doped with the first-type ions, one grounding region is located at one of two sides of the input region. ### Claim 11 (depends on 4) The method according to claim 4, further comprising: after the first ion implantation process and before the second ion implantation process, performing an amorphous ion implantation process to form an amorphous layer on the epitaxial layer, the amorphous layer being made of an amorphous material. ### Claim 12 (depends on 11) The method according to claim 11, wherein the amorphous ion implantation process implants germanium ions into the epitaxial layer. ### Claim 13 (depends on 1) The method according to claim 1, wherein the first-type ions are P-type ions and the second-type ions are N-type ions. ### Claim 14 (depends on 13) The method according to claim 13, wherein fabrication parameters of the first ion implantation process include: an implantation energy in a range of about 15 KeV to about 80 KeV; an implantation dose in a range of about 1E13 atoms/cm2 to about 3E15 atoms/cm2, and an angle of implantation in a range of about 0° to about 15°, wherein the angle of implantation is an angle between a direction of implantation and a normal line of a surface of the substrate. ### Claim 15 (depends on 14) The method according to claim 14, wherein fabrication parameters of the second ion implantation process include: an implantation energy in a range of about 5 KeV to about 25 KeV; an implantation dose in a range of about 1E13 atoms/cm2 to about 1E15 atoms/cm2, and an angle of implantation of about 0°, wherein the angle of implantation is an angle between the direction of implantation and the normal line of the surface of the substrate. ### Claim 16 (depends on 13) The method according to claim 13, wherein the first-type ions are boron ions and the second-type ions are phosphorous ions. ### Claim 17 (depends on 1) The method according to claim 1, wherein the epitaxial layer is made of one or more of silicon and silicon phosphide. ### Claim 18 (depends on 2) The method according to claim 2, wherein a process to form the epitaxial layer includes: forming a barrier layer on the insulating layer and the sidewall of the fin, the barrier layer exposing a portion of the top surface of the fin; using the barrier layer as a mask to etch the fin to form an opening in the fin; and performing a selective epitaxial deposition process on the top surface of the fin to form the epitaxial layer. ### Claim 19 (depends on 1) The method according to claim 1, wherein the counter-doped region is formed on the well region and in a surface portion of the substrate between two adjacent fins to insulate adjacent extended drain regions. ### Claim 20 A method for forming an electrostatic discharge (ESD) protection device, comprising: providing a substrate including an input region; forming a plurality of fins on the substrate in the input region; forming an insulating layer on the substrate, the insulating layer covering a portion of a sidewall of a fin, a top surface of the insulating layer being lower than the top surfaces of the plurality of fins; forming a well region, doped with first-type ions, in the plurality of fins and in the substrate; forming an epitaxial layer on each fin in the input region, wherein a process to form the epitaxial layer includes: forming a barrier layer on the insulating layer and the sidewall of the fin, the barrier layer exposing a portion of the top surface of the fin; and using the barrier layer as a mask to perform a selective epitaxial deposition process on the top surface of the fin to form the epitaxial layer; forming a drain region, doped with second-type ions, in a top portion of each fin and in the epitaxial layer; forming an extended drain region, doped with the second-type ions, in a bottom portion of each fin to connect to the drain region and in a portion of the substrate, in the input region; and forming a counter-doped region, doped with the first-type ions, in a portion of the substrate between two adjacent fins to insulate adjacent extended drain regions.