# US 10,504,882 B2 · Optical systems fabricated by printing-based assembly

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- Number: US 10,504,882 B2
- Document ID: US10504882B2
- Status: Granted
- Kind: B2
- Application number: 15/402,723
- Filed: 2017-01-10
- Published: 2017-06-22
- Granted: 2019-12-10
- Earliest claimed: 2007-01-17
- Assignees: The Board of Trustees of the University of Illinois; X-Celeprint Limited
- Applicants: The Board of Trustees of the University of Illinois; Semprius, Inc.
- Inventors: John Rogers; Ralph Nuzzo; Matthew Meitl; Etienne Menard; Alfred Baca; Michael Motala; Jong-Hyun Ahn; Sang-Il Park; Chang-Jae Yu; Heung Cho Ko; Mark Stoykovich; Jongseung Yoon
- Web page: https://patentgrep.com/patent/US10504882B2

## CPC

- H10W 90/00: Package configurations
- H01S 5/021: {Silicon based substrates}
- H01S 5/02251: using optical fibres
- H01S 5/183: having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S 5/3013: {AIIIBV compounds}
- H01S 5/34326: {with a well layer based on InGa(Al)P, e.g. red laser}
- H01S 5/423: {having a vertical cavity}
- H10D 86/0229: {characterised by control of the annealing or irradiation parameters}
- H10D 86/0241: {using liquid deposition, e.g. printing}
- H10D 86/40: characterised by multiple TFTs
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/60: wherein the TFTs are in active matrices
- H10F 10/144: comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
- H10F 10/161: comprising multiple PN heterojunctions, e.g. tandem cells
- H10F 19/40: comprising photovoltaic cells in a mechanically stacked configuration
- H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F 39/8063: {Microlenses}
- H10F 39/811: {Interconnections}
- H10F 55/25: wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
- H10F 71/121: {The active layers comprising only Group IV materials}
- H10F 71/1224: {comprising microcrystalline silicon}
- H10F 71/129: {Passivating}
- H10F 71/137: {Batch treatment of the devices}
- H10F 71/139: {using temporary substrates}
- H10F 77/1223: characterised by the dopants
- H10F 77/1248: {having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP}
- H10F 77/315: {the coatings being antireflective or having enhancing optical properties}
- H10F 77/407: {indirectly associated with the devices}
- H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)}
- H10F 77/484: {Refractive light-concentrating means, e.g. lenses}
- H10F 77/488: {Reflecting light-concentrating means, e.g. parabolic mirrors or concentrators using total internal reflection}
- H10F 77/67: including means to utilise heat energy directly associated with the photovoltaic cells, e.g. integrated Seebeck elements
- H10F 77/933: {for devices having potential barriers}
- H10F 77/935: {for photovoltaic devices or modules}
- H10H 20/01: Manufacture or treatment
- H10H 20/018: {Bonding of wafers}
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/824: comprising only Group III-V materials, e.g. GaP
- H10H 20/8506: {Containers}
- H10H 20/852: Encapsulations
- H10H 20/853: characterised by their shape
- H10H 20/854: characterised by their material, e.g. epoxy or silicone resins
- H10H 20/855: Optical field-shaping means, e.g. lenses
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10W 72/00: Interconnections or connectors in packages
- B81C 2201/0185: Printing, e.g. microcontact printing
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- H10D 30/675: {Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium}
- H10D 30/6758: {characterised by the insulating substrates}
- H10H 20/0362: {of encapsulations}
- H10H 20/0363: {of optical field-shaping means}
- H10H 20/0364: {of interconnections}
- H10H 20/882: {Scattering means (H10H20/82 takes precedence)}
- H10W 72/0198: {batch processes}
- H10W 72/0711: {Apparatus therefor}
- H10W 72/07178: {Means for aligning}
- H10W 72/07183: {Means for monitoring}
- H10W 72/07307: {the auxiliary member being a temporary substrate, e.g. a removable substrate}
- H10W 72/354: {comprising polymers}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- Y02E 10/52: PV systems with concentrators
- Y02E 10/544: Solar cells from Group III-V materials
- Y02E 10/545: Microcrystalline silicon PV cells
- Y02E 10/547: Monocrystalline silicon PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01)
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

## Claims

### Claim 1

A semiconductor system, comprising:
a substrate having a receiving surface, wherein the substrate comprises glass or polymer; and
a plurality of separate and individual crystalline semiconductor elements,
wherein the semiconductor elements are provided on the receiving surface of the substrate in a regular array with a density greater than or equal to five semiconductor elements per millimeter,
wherein the separate and individual crystalline semiconductor elements are non-native to the substrate, and
wherein the separate and individual crystalline semiconductor elements have a length and a width in a direction parallel to the receiving surface greater than a thickness in a direction orthogonal to the receiving surface.

### Claim 2 (depends on 1)

The semiconductor system of claim 1, wherein the semiconductor elements are provided on the receiving surface of the substrate with a density greater than or equal to fifty semiconductor elements per millimeter.

### Claim 3 (depends on 1)

The semiconductor system of claim 1, wherein the semiconductor elements are provided on the receiving surface of the substrate with a density greater than or equal to one hundred semiconductor elements per millimeter.

### Claim 4 (depends on 1)

The semiconductor system of claim 1, wherein each of the semiconductor elements has at least a length or width physical dimension less than or equal to 200 microns.

### Claim 5 (depends on 1)

The semiconductor system of claim 1, wherein each of the semiconductor elements has at least a length or width physical dimension less than or equal to 2 microns.

### Claim 6 (depends on 1)

The semiconductor system of claim 1, wherein each of the semiconductor elements has at least a length or width physical dimension less than or equal to 0.5 microns.

### Claim 7 (depends on 1)

The semiconductor system of claim 1, wherein each of the semiconductor elements has at least a thickness physical dimension less than or equal to 100 microns.

### Claim 8 (depends on 1)

The semiconductor system of claim 1, wherein each of the semiconductor elements has at least a thickness physical dimension less than or equal to 10 microns.

### Claim 9 (depends on 1)

The semiconductor system of claim 1, wherein each of the semiconductor elements has at least a thickness physical dimension less than or equal to 1 micron.

### Claim 10 (depends on 1)

The semiconductor system of claim 1, wherein the positions of the semiconductor elements are separated by less than or equal to 10 microns.

### Claim 11 (depends on 1)

The semiconductor system of claim 1, wherein the positions of the semiconductor elements are longitudinally aligned to each other.

### Claim 12 (depends on 1)

The semiconductor system of claim 1, wherein the lengths of the semiconductor elements are parallel to within 3 degrees.

### Claim 13 (depends on 1)

The semiconductor system of claim 1, wherein the semiconductor system is an optical system.

### Claim 14 (depends on 13)

The semiconductor system of claim 13, wherein the optical system is a light-emitting system, a light-collecting system, or a light-sensing system.

### Claim 15 (depends on 1)

The semiconductor system of claim 1, wherein the semiconductor element is a light-emitting diode (LED), a laser, a solar cell, a sensor, a diode, a transistor, or a photodiode.

### Claim 16 (depends on 1)

The semiconductor system of claim 1, further comprising an adhesive layer on the receiving surface to adhere the semiconductor elements to the substrate.

### Claim 17 (depends on 1)

The semiconductor system of claim 1, further comprising a first and second electrodes provided on the receiving surface, wherein the semiconductor elements are in electrical contact with at least one of the first and second electrodes, and wherein the semiconductor elements provide a fill factor between the first and second electrodes greater than or equal to 10%.

### Claim 18 (depends on 1)

The semiconductor system of claim 1, further comprising a first and second electrodes provided on the receiving surface, wherein the semiconductor elements are in electrical contact with at least one of the first and second electrodes, and wherein the semiconductor elements provide a fill factor between the first and second electrodes greater than or equal to 50%.

### Claim 19

A method of making a semiconductor system, comprising:
providing a substrate having a receiving surface, wherein the substrate comprises glass or polymer;
providing a plurality of separate and individual printable crystalline semiconductor elements on an inorganic semiconductor source wafer, wherein the crystalline semiconductor elements have a length and a width in a direction parallel to a receiving surface greater than a thickness in a direction orthogonal to the receiving surface; and
dry transfer contact printing the printable crystalline semiconductor elements from the source wafer to the receiving surface of the substrate thereby providing separate and individual printed crystalline semiconductor elements to the receiving surface of the substrate with a density greater than or equal to five semiconductor elements per millimeter, wherein the printed crystalline semiconductor elements are non-native to the substrate.