# US 10,504,877 B2 · Surface mount device/integrated passive device on package or device structure and methods of forming

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- Number: US 10,504,877 B2
- Document ID: US10504877B2
- Status: Granted
- Kind: B2
- Application number: 16/200,148
- Filed: 2018-11-26
- Published: 2019-03-28
- Granted: 2019-12-10
- Earliest claimed: 2015-07-31
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Cheng-Hsien Hsieh; Hsien-Wei Chen; Chi-Hsi Wu; Chen-Hua Yu; Der-Chyang Yeh; Wei-Cheng Wu
- Web page: https://patentgrep.com/patent/US10504877B2

## CPC

- H10W 90/00: Package configurations
- H10W 70/09: extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
- H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40)
- H10W 72/241: {Dispositions, e.g. layouts}
- H10W 72/9413: {on encapsulations}
- H10W 74/019: {using temporary auxiliary substrates (H10W74/017 takes precedence)}
- H10W 74/142: {the encapsulations exposing the passive side of the semiconductor body}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Package structures and methods of forming them are described. In an embodiment, a package structure includes an integrated circuit die embedded in an encapsulant and a redistribution structure on the encapsulant. The redistribution structure includes a metallization layer distal from the encapsulant and the integrated circuit die, and a dielectric layer distal from the encapsulant and the integrated circuit die and on the metallization layer. The package structure also includes a first under metallization structure on the dielectric layer and a Surface Mount Device and/or Integrated Passive Device (“SMD/IPD”) attached to the first under metallization structure. The first under metallization structure includes first through fourth extending portions extending through first through fourth openings of the dielectric layer to first through fourth patterns of the metallization layer, respectively. The first opening, the second opening, the third opening, and the fourth opening are physically separated from each other.

## Claims

### Claim 1

A package structure comprising:
an integrated circuit die;
an encapsulant around the integrated circuit die;
a redistribution structure on the encapsulant and electrically coupled to the integrated circuit die, the redistribution structure comprising:
a metallization layer distal from the encapsulant, wherein the metallization layer is an uppermost metallization layer of the redistribution structure; and
a dielectric layer on the metallization layer, wherein the dielectric layer is an uppermost dielectric layer of the redistribution structure;
a first under metallization structure on the dielectric layer, the first under metallization structure comprising a first under-terminal metallization including a first extending portion and a second extending portion, wherein the first extending portion extends through the dielectric layer and is connected to a first pattern of the metallization layer, wherein the second extending portion extends through the dielectric layer and is connected to a second pattern of the metallization layer, wherein the first under-terminal metallization further includes a first upper portion on an upper surface of the dielectric layer distal from the encapsulant, the first upper portion extending continuously from the first extending portion to the second extending portion; and
an electrical device attached to the first under metallization structure, wherein the electrical device has a first connector formed of a first conductive material, wherein the first connector physically contacts the first extending portion and the second extending portion of the first under-terminal metallization, wherein the first conductive material extends continuously from the first extending portion to the second extending portion.

### Claim 2 (depends on 1)

The package structure of claim 1, wherein the first upper portion of the first under-terminal metallization has a first recess directly over the first extending portion and has a second recess directly over the second extending portion.

### Claim 3 (depends on 2)

The package structure of claim 2, wherein the first connector of the electrical device has a first protrusion and a second protrusion, the first protrusion extending into the first recess, and the second protrusion extending into the second recess.

### Claim 4 (depends on 1)

The package structure of claim 1, wherein the metallization layer further comprises dummy metal patterns between the first pattern and the second pattern of the metallization layer, wherein the dummy metal patterns are electrically isolated.

### Claim 5 (depends on 4)

The package structure of claim 4, wherein there are openings in the dummy metal patterns.

### Claim 6 (depends on 1)

The package structure of claim 1, further comprising:
a second under metallization structure on the dielectric layer, the second under metallization structure extending through the dielectric layer and connected to the metallization layer;
an external connector on the second under metallization structure; and
a package substrate bonded to the external connector.

### Claim 7 (depends on 6)

The package structure of claim 6, wherein the external connector extends further from the redistribution structure than the electrical device.

### Claim 8 (depends on 6)

The package structure of claim 6, wherein the electrical device is disposed between the package substrate and the redistribution structure, and the electrical device is spaced apart from the package substrate.

### Claim 9 (depends on 1)

The package structure of claim 1, wherein the first under metallization structure further comprising a second under-terminal metallization including a third extending portion and a fourth extending portion, wherein the third extending portion extends through the dielectric layer and is connected to a third pattern of the metallization layer, wherein the fourth extending portion extends through the dielectric layer and is connected to a fourth pattern of the metallization layer.

### Claim 10 (depends on 9)

The package structure of claim 9, wherein in a top view, the first extending portion, the second extending portion, the third extending portion, and the fourth extending portion define vertices of a rectangular area.

### Claim 11 (depends on 10)

The package structure of claim 10, wherein the metallization layer further comprises dummy metal patterns within the rectangular area.

### Claim 12

A package structure comprising:
a die;
an encapsulant at least laterally encapsulating the die;
a redistribution structure on the encapsulant, the redistribution structure comprising a dielectric layer on a metallization layer;
a first under-terminal structure on the redistribution structure, the first under-terminal structure comprising a first extending portion extending through the dielectric layer to a first pattern of the metallization layer and comprising a second extending portion extending through the dielectric layer to a second pattern of the metallization layer, the first under-terminal structure further comprising a first upper portion disposed on the dielectric layer and connecting the first extending portion and the second extending portion;
a dummy pattern in the metallization layer and under the first upper portion of the first under-terminal structure, wherein the dummy pattern comprises an electrically conductive material and is electrically isolated, wherein the first under-terminal structure extends laterally beyond lateral extents of the dummy pattern; and
an electrical device having a first terminal attached to the first under-terminal structure.

### Claim 13 (depends on 12)

The package structure of claim 12, wherein the dummy pattern comprises:
first dummy metal patterns extending along a first direction from the first pattern of the metallization layer to the second pattern of the metallization layer; and
second dummy metal patterns extending along a second direction perpendicular to the first direction.

### Claim 14 (depends on 13)

The package structure of claim 13, wherein there are openings extending through the dummy pattern.

### Claim 15 (depends on 12)

The package structure of claim 12, further comprising an external connector coupled to a third pattern of the metallization layer through an under bump metallization, wherein the external connector extends further from the dielectric layer than the electrical device.

### Claim 16

A method comprising:
surrounding an integrated circuit die with an encapsulant;
forming a redistribution structure on the encapsulant, the redistribution structure comprising a topmost dielectric layer on a topmost metallization layer, wherein the topmost metallization layer has a first metallization pattern and a second metallization pattern physically separated from the first metallization pattern;
forming a first under-terminal metallization on the redistribution structure, the first under-terminal metallization comprising a first extending portion extending through the topmost dielectric layer to the first metallization pattern and comprising a second extending portion extending through the topmost dielectric layer to the second metallization pattern, wherein the first under-terminal metallization extends continuously along an upper surface of the topmost dielectric layer from the first extending portion to the second extending portion; and
attaching a first terminal of an electrical device to the first under-terminal metallization, wherein the first terminal extends continuously from the first extending portion of the first under-terminal metallization to the second extending portion of the first under-terminal metallization.

### Claim 17 (depends on 16)

The method of claim 16, further comprising forming a dummy metallization pattern in the topmost metallization layer between the first metallization pattern and the second metallization pattern, wherein the dummy metallization pattern has openings that extend through the dummy metallization pattern.

### Claim 18 (depends on 16)

The method of claim 16, wherein forming the first under-terminal metallization comprises forming an upper portion of the first under-terminal metallization over the topmost dielectric layer, the upper portion extending continuously along the upper surface of the topmost dielectric layer from the first extending portion to the second extending portion.

### Claim 19 (depends on 18)

The method of claim 18, wherein in a top view, the first extending portion and the second extending portion are formed within perimeters of the upper portion of the first under-terminal metallization.

### Claim 20 (depends on 18)

The method of claim 18, wherein the upper portion of the first under-terminal metallization are formed to have a first recess aligned with the first extending portion and to have a second recess aligned with the second extending portion.