# US 10,504,875 B2 · Die-bonding substrate, high-density integrated COB white light source and method for manufacturing the same

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- Number: US 10,504,875 B2
- Document ID: US10504875B2
- Status: Granted
- Kind: B2
- Application number: 15/777,582
- Filed: 2016-06-08
- Published: 2018-11-01
- Granted: 2019-12-10
- Earliest claimed: 2015-11-20
- Assignees: Fujian Cas-Ceramic Optoelectronics Technology Co., Ltd
- Applicants: Fujian Cas-Ceramic Optoelectronics Technology Co., Ltd
- Inventors: Shanghui Ye; Jieqin Zhang; Maochun Hong; Wenxiong Lin; Wang Guo; Yunfeng Zhang
- Web page: https://patentgrep.com/patent/US10504875B2

## CPC

- H10W 90/00: Package configurations
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10H 20/0362: {of encapsulations}
- H10H 20/0364: {of interconnections}
- H10H 20/8514: {characterised by their shape, e.g. plate or foil}
- H10H 20/854: characterised by their material, e.g. epoxy or silicone resins
- H10H 20/856: Reflecting means
- H10H 20/8585: {being an interconnection}
- H10H 20/882: {Scattering means (H10H20/82 takes precedence)}
- H10W 72/07553: {changes in shapes}
- H10W 72/531: {Shapes of wire connectors}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A die-bonding substrate has a substrate, and a conductive line layer and a chip array provided on the substrate. The conductive line layer includes a chip welding wire region and an external electrode region connected with each other. The chip welding wire region is composed of multiple conductive lines, wherein the central conductive line located in the central position of the chip welding wire region is a straight line section. The conductive lines arranged at both sides of the central conductive line are straight line sections at both ends, and arc sections curved outwards in the middle, so that the entire chip welding wire region forms a circular area. The array chips are arranged inside the circular area, and are electrically connected with the conductive lines arranged at both sides. The entire chip welding wire region can also form a rectangular area.

## Claims

### Claim 1

A high-density integrated COB white light source, comprising a die-bonding substrate, height limiting retainers disposed on the die-bonding substrate, and a solid-state phosphor located in a light exit direction of the die-bonding substrate, wherein the height limiting retainers support the solid state phosphor,
wherein the die-bonding substrate comprises a substrate, and a conductive line layer and array chips provided on the substrate, wherein the conductive line layer includes a chip welding wire region and an external electrode region, which are electrically connected with each other; and that the chip welding wire region is composed of multiple conductive lines;
wherein the central conductive line located in the central position of the chip welding wire region is a straight line section, and is the longest line section; the conductive lines arranged at both sides of the central conductive line are straight line sections at both ends, and arc sections curved outwards in the middle, the farther a conductive line lies away from the central conductive line, the shorter its straight line section is, and the longer its arc section is,
wherein the entire chip welding wire region forms a circular area; the array chips are arranged inside the circular area, and are electrically connected with the conductive lines arranged at both sides;
or wherein the conductive lines are straight line sections arranged parallel to one another, wherein the entire chip welding wire region forms a rectangular area; the array chips are arranged inside the rectangular area, and are electrically connected with the conductive lines arranged at both sides.

### Claim 2 (depends on 1)

The high-density integrated COB white light source according to claim 1, wherein the circular area is equally divided into four sector areas, two symmetrically distributed areas of arc sections and two symmetrically distributed areas of straight line sections.

### Claim 3 (depends on 1)

The high-density integrated COB white light source according to claim 1, wherein the light source further comprises a reflective dam body made of a highly reflecting colloid, wherein the reflective dam body is arranged on the die-bonding substrate at the outer edge of the height-limiting retainers, and its height is not less than that of the height-limiting retainers.

### Claim 4 (depends on 3)

The high-density integrated COB white light source according to claim 3, wherein the outer diameter of the solid-state phosphor is not larger than the inner diameter of the reflective dam body.

### Claim 5

A method for manufacturing a high-density integrated COB white light source, wherein the manufacturing method comprises the steps of: manufacturing a die-bonding substrate, manufacturing height-limiting retainers, electrically connecting welding wires, manufacturing a reflective dam body, pre-curing a filled colloid, and encapsulating a solid-state phosphor;
manufacturing a die-bonding substrate comprising:
11) designing the configuration of the conductive line layer and the array chips; the conductive line layer including a chip welding wire region and an external electrode region, which are electrically connected with each other; the chip welding wire region being composed of multiple conductive lines;
wherein the central conductive line located in the central position of the chip welding wire region is a straight line section, and is the longest line section; the conductive lines arranged at both sides of the central conductive line are straight line sections at both ends, and arc sections curved outwards in the middle, the farther a conductive line lies away from the central conductive line, the shorter its straight line section is, and the longer its arc section is, wherein the entire chip welding wire region forms a circular area, which is equally divided into four sector areas, two symmetrically distributed areas of arc sections and two symmetrically distributed areas of straight line sections;
or wherein the conductive lines are straight line sections arranged parallel to one another, wherein the entire chip welding wire region forms a rectangular area;
12) fabricating the conductive line layer on a heat-sink substrate by a printing process, and at the same time, covering the regions except the conductive line layer with an electrically insulating layer;
13) fixing the array chips in the circular or rectangular area by a die-bonding process, so as to form a die-bonding substrate;
manufacturing height-limiting retainers is to manufacture height-limiting retainers at the periphery of the die-bonding region;
electrically connecting welding wires is to electrically connect the LED chips in the array chips to the corresponding conductive lines in the conductive line layer by means of a reverse looping and wire bonding process and a gold wire welding process;
manufacturing a reflective dam body is to manufacture a reflective dam body at the periphery of the height-limiting retainers;
pre-curing a filled colloid is to fill a space enclosed by the reflective dam body with transparent colloid until the height-limiting retainers are submerged, to discharge gases and perform pre-curing after leveling of the colloid;
encapsulating a solid-state phosphor is to place the solid-state phosphor on the height-limiting retainers inside the reflective dam body, to maintain a light-pressure state and perform a subsequent deep thermal curing.

### Claim 6 (depends on 5)

The method for manufacturing a high-density integrated COB white light source according to claim 5, wherein, during the reverse looping and wire bonding and during the gold wire welding, the first welding point is a conductive line, the second welding point is an electrode of the LED chips, and the second welding point is welded by ball welding, and the highest point of the bank of the wire bonding is 20-80 microns higher than the LED chips, but not higher than the height-limiting retainers, the angle between the lead wire of the first welding point and the horizontal direction is in the range of 15°-80°, and the angle between the lead wire of the second welding point and the horizontal direction is in the range of 30°-80°.

### Claim 7 (depends on 5)

The method for manufacturing a high-density integrated COB white light source according to claim 5, wherein the pre-curing is performed at a temperature of 60° C. for a duration of 0.5 hour, and that the deep thermal curing is performed firstly at a temperature of 80° C. for 0.5 hour; then at a temperature of 150° C. for 1 hour; and finally at a temperature of 60° C. for 0.5 hour.

### Claim 8 (depends on 5)

The method for manufacturing a high-density integrated COB white light source according to claim 5, wherein the outer diameter of the solid-state phosphor is not larger than the inner diameter of the reflective dam body.

### Claim 9 (depends on 2)

The high-density integrated COB white light source according to claim 2, wherein a series-parallel logic of the array chips is to be connected at first in parallel and then in series.

### Claim 10 (depends on 2)

The high-density integrated COB white light source according to claim 2, wherein the array chips are electrically connected to the conductive lines in the following specific manner: the LED chips in the array chips are electrically connected to the corresponding conductive lines in the conductive line layer by means of a reverse looping and wire bonding process and a gold wire welding process.

### Claim 11 (depends on 1)

The high-density integrated COB white light source according to claim 1, wherein the height-limiting retainers are 150-350 microns higher than the die-bonding substrate.

### Claim 12 (depends on 3)

The high-density integrated COB white light source according to claim 3, wherein the highly reflecting colloid reflects the radiation lights in the range of 200-1000 nm with a reflectivity of not less than 70%.

### Claim 13 (depends on 4)

The high-density integrated COB white light source according to claim 4, wherein a host material of the solid-state phosphor is glass, ceramic, glass-ceramic or heat-resistant hard organism, and the solid-state phosphor has a function of wavelength conversion, being able to absorb excitation lights having a wavelength of 200-600 nm and to emit radiation lights having a wavelength of 400-800 nm.

### Claim 14 (depends on 8)

The method for manufacturing a high-density integrated COB white light source according to claim 8, wherein a host material of the solid-state phosphor is glass, ceramic, glass-ceramic or heat-resistant hard organism, and the solid-state phosphor has a function of wavelength conversion, being able to absorb excitation lights having a wavelength of 200-600 nm and emit radiation lights having a wavelength of 400-800 nm.