# US 10,504,871 B2 · Semiconductor device and manufacturing method thereof

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- Number: US 10,504,871 B2
- Document ID: US10504871B2
- Status: Granted
- Kind: B2
- Application number: 15/837,917
- Filed: 2017-12-11
- Published: 2019-06-13
- Granted: 2019-12-10
- Earliest claimed: 2017-12-11
- Assignees: Amkor Technology, Inc.
- Applicants: Amkor Technology, Inc.
- Inventors: Ronald Huemoeller
- Web page: https://patentgrep.com/patent/US10504871B2

## CPC

- H10W 70/05: of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04)
- H10W 72/0198: {batch processes}
- H10P 72/74: {using temporarily an auxiliary support}
- H10W 70/099: {Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers}
- H10W 70/685: comprising multiple insulating layers
- H10W 74/019: {using temporary auxiliary substrates (H10W74/017 takes precedence)}
- H10W 90/701: {characterised by the relative positions of pads or connectors relative to package parts}
- H10P 72/7424: {used as a support during the manufacture of self-supporting substrates}
- H10P 72/744: {Details of chemical or physical process used for separating the auxiliary support from a device or a wafer}
- H10P 72/7442: {Separation by peeling}
- H10W 70/66: Conductive materials thereof
- H10W 72/072: {of bump connectors}
- H10W 72/07207: {Temporary substrates, e.g. removable substrates}
- H10W 72/241: {Dispositions, e.g. layouts}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/29: Bond pads specially adapted therefor
- H10W 72/325: {Die-attach connectors having a filler embedded in a matrix}
- H10W 72/351: {Materials of die-attach connectors}
- H10W 72/354: {comprising polymers}
- H10W 72/90: Bond pads, in general
- H10W 74/012: {of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills}
- H10W 74/014: {using batch processing}
- H10W 74/117: {the substrate having spherical bumps for external connection}
- H10W 74/15: on active surfaces of flip-chip devices, e.g. underfills
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method of manufacturing a semiconductor device includes forming a substrate structure. The substrate structure includes a carrier, an adhesive layer, and a signal distribution structure (SDS). The carrier includes a top carrier side and a bottom carrier side. The adhesive layer includes a bottom adhesive layer side on the top carrier side and a top adhesive layer side. The SDS includes a bottom SDS side adhered to the top adhesive layer side and a top SDS side. The SDS also includes conductive layers and at least one dielectric layer. The method includes coupling a bottom side of a test carrier to the top SDS side. The test carrier includes an aperture that exposes at least a portion of the top SDS side. The method also includes testing the SDS, at least in part, through the aperture in the test carrier and attaching the carrier to the bottom SDS side.

## Claims

### Claim 1

A method of manufacturing a semiconductor device, the method comprising:
receiving a substrate structure comprising:
a carrier comprising a top carrier side and a bottom carrier side;
an adhesive layer comprising a bottom adhesive layer side on the top carrier side, and a top adhesive layer side; and
a signal distribution structure (SDS) comprising a bottom SDS side adhered to the top adhesive layer side and a top SDS side, the signal distribution structure comprising a plurality of conductive layers; and
mounting a semiconductor die to the SDS, the semiconductor die comprising a bottom die side mounted to the top SDS side, a top die side, and lateral die sides,
wherein the SDS is in a pre-tested state achieved by:
coupling a bottom side of a test carrier to the top SDS side, wherein the test carrier comprises an aperture that exposes at least a portion of the top SDS side;
testing the SDS, at least in part, through the aperture in the test carrier; and
attaching the carrier to the bottom SDS side.

### Claim 2 (depends on 1)

The method of claim 1, wherein the substrate structure comprises a rectangular array of the SDS and a plurality of other signal distribution structures.

### Claim 3 (depends on 1)

The method of claim 1, comprising after said attaching the carrier, removing the test carrier from the SDS.

### Claim 4 (depends on 1)

The method of claim 1, wherein said attaching the carrier comprises attaching the carrier to the bottom SDS side with the adhesive layer.

### Claim 5 (depends on 1)

The method of claim 1, wherein the test carrier further comprises at least one additional window that exposes a top side of another SDS.

### Claim 6 (depends on 1)

The method of claim 1, wherein the test carrier is removed prior to the mounting of the semiconductor die and after the attaching the carrier to the bottom SDS side.

### Claim 7

A method of manufacturing a semiconductor device, the method comprising:
forming a substrate structure comprising:
a carrier comprising a top carrier side and a bottom carrier side;
an adhesive layer comprising a bottom adhesive layer side on the top carrier side, and a top adhesive layer side; and
a signal distribution structure (SDS) comprising a bottom SDS side adhered to the top adhesive layer side and a top SDS side, the signal distribution structure comprising a plurality of conductive layers, and at least one dielectric layer,
wherein said forming comprises:
receiving a first initial carrier and the SDS, wherein the bottom SDS side is coupled to a top side of the first initial carrier;
coupling a bottom side of a second initial carrier to the top SDS side, wherein the second initial carrier comprises an aperture that exposes at least a portion of the top SDS side;
removing the first initial carrier from the bottom SDS side;
testing the SDS, at least in part, through the aperture in the second initial carrier; and
attaching the carrier to the bottom SDS side.

### Claim 8 (depends on 7)

The method of claim 7, comprising after said attaching the carrier, removing the second initial carrier from the SDS.

### Claim 9 (depends on 7)

The method of claim 7, wherein said attaching the carrier comprises attaching the carrier to the bottom SDS side with the adhesive layer.

### Claim 10 (depends on 7)

The method of claim 7, wherein the second initial carrier further comprises at least one additional window that exposes a top side of another SDS.

### Claim 11 (depends on 7)

The method of claim 7, wherein the substrate structure comprises a rectangular array of the SDS and a plurality of other signal distribution structures.

### Claim 12 (depends on 7)

The method of claim 7, wherein the carrier comprises a glass carrier.

### Claim 13

A method of manufacturing a semiconductor device, the method comprising:
forming a substrate structure comprising:
a carrier comprising a top carrier side and a bottom carrier side;
an adhesive layer comprising a bottom adhesive layer side on the top carrier side, and a top adhesive layer side; and
a signal distribution structure (SDS) comprising a bottom SDS side adhered to the top adhesive layer side and a top SDS side, the signal distribution structure comprising a plurality of conductive layers, and at least one dielectric layer,
wherein said forming comprises:
coupling a bottom side of a test carrier to the top SDS side, wherein the test carrier comprises an aperture that exposes at least a portion of the top SDS side;
testing the SDS, at least in part, through the aperture in the test carrier; and
attaching the carrier to the bottom SDS side.

### Claim 14 (depends on 13)

The method of claim 13, wherein the substrate structure comprises a rectangular array of the SDS and a plurality of other signal distribution structures.

### Claim 15 (depends on 13)

The method of claim 13, wherein the carrier comprises a glass carrier.

### Claim 16 (depends on 13)

The method of claim 13, wherein the SDS comprises only a single dielectric layer.

### Claim 17 (depends on 13)

The method of claim 13, wherein the substrate structure comprises a strip-shaped array of package substrates.

### Claim 18 (depends on 13)

The method of claim 13, comprising after said attaching the carrier, removing the test carrier from the SDS.

### Claim 19 (depends on 13)

The method of claim 13, wherein said attaching the carrier comprises attaching the carrier to the bottom SDS side with the adhesive layer.

### Claim 20 (depends on 13)

The method of claim 13, wherein the test carrier further comprises at least one additional window that exposes a top side of another SDS.