# US 10,504,868 B2 · Solder joining > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,504,868 B2 - Document ID: US10504868B2 - Status: Granted - Kind: B2 - Application number: 15/994,797 - Filed: 2018-05-31 - Published: 2018-09-27 - Granted: 2019-12-10 - Earliest claimed: 2016-06-16 - Assignees: Fuji Electric Co., Ltd. - Applicants: Fuji Electric Co., Ltd. - Inventors: Hirohiko Watanabe; Shunsuke Saito; Yoshihiro Kodaira - Web page: https://patentgrep.com/patent/US10504868B2 ## CPC - C22C 13/02: with antimony or bismuth as the next major constituent - B23K 35/0238: {layered} - B23K 35/26: with the principal constituent melting at less than 400°C - B23K 35/262: {Sn as the principal constituent} - B23K 35/302: {Cu as the principal constituent} - H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates} - H10W 72/071: {Connecting or disconnecting} - B23K 2101/40: Semiconductor devices - B23K 2103/12: Copper or alloys thereof - H05K 3/346: Solder materials or compositions specially adapted therefor - H05K 2201/10166: Transistor - H10W 72/352: {comprising metals or metalloids, e.g. solders} - H10W 72/5363: {the connected ends being wedge-shaped} - H10W 72/884: {Die-attach connectors and bond wires} - H10W 74/00: Encapsulations, e.g. protective coatings - H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL} - C22C: ALLOYS (treatment of alloys C21D, C22F) - B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS ## Abstract The present invention suppresses fracture at an interface between different materials, and provides a solder joining which includes: a solder joining layer 10 having a melted solder material, containing Sb at more than 5.0% by mass and 10.0% by mass or less, Ag at 2.0 to 4.0% by mass, Ni at more than 0 and 1.0% by mass or less, and a balance made up of Sn and inevitable impurities; and joining members 11 and 123 at least one of which is a Cu or Cu-alloy member 123, in which the solder joining layer includes a first structure 1 containing (Cu, Ni)6(Sn, Sb)5 and a second structure 2 containing (Ni, Cu)3(Sn, Sb)X (in the formula, X is 1, 2, or 4) at an interface with the Cu or Cu-alloy member 123, and an electronic device and a semiconductor device including the solder joining. ## Claims ### Claim 1 A solder joining structure, comprising: a solder joining layer having a melted solder material, comprising more than 5.0% by mass and 10.0% by mass or less of Sb, 2.0 to 4.0% by mass of Ag, more than 0 and 1.0% by mass or less of Ni, and a balance made up of Sn and inevitable impurities; and joining members at least one of which is a Cu or Cu-alloy member, wherein the solder joining layer includes a first structure containing (Cu, Ni)6(Sn, Sb)5 and a second structure containing (Ni, Cu)3(Sn, Sb)x (wherein, X is 1, 2, or 4) at an interface with the Cu or Cu-alloy member. ### Claim 2 (depends on 1) The solder joining structure according to claim 1, wherein the solder material further comprises 0.001 to 0.1% by mass of Ge. ### Claim 3 (depends on 1) The solder joining structure according to claim 1, wherein the solder material further comprises more than 0 and 1.2% by mass or less of Cu. ### Claim 4 (depends on 2) The solder joining structure according to claim 2, wherein the solder material further comprises more than 0 and 1.2% by mass or less of Cu. ### Claim 5 (depends on 1) The solder joining structure according to claim 1, wherein the solder material further comprises 0.001 to 0.1% by mass of P. ### Claim 6 (depends on 2) The solder joining structure according to claim 2, wherein the solder material further comprises 0.001 to 0.1% by mass of P. ### Claim 7 (depends on 3) The solder joining structure according to claim 3, wherein the solder material further comprises 0.001 to 0.1% by mass of P. ### Claim 8 (depends on 4) The solder joining structure according to claim 4, wherein the solder material further comprises 0.001 to 0.1% by mass of P. ### Claim 9 (depends on 1) The solder joining structure according to claim 1, wherein Ni of the solder material is partially substituted with one or more elements selected from Pt, Pd, and Rh. ### Claim 10 (depends on 1) The solder joining structure according to claim 1, wherein a content of the Ni of the solder material is 0.1 to 0.4% by mass, or Ni of the solder material is partially substituted with one or more elements selected from Pt, Pd, and Rh and a total content of Ni and the one or more elements selected from Pt, Pd, and Rh is 0.1 to 0.4% by mass. ### Claim 11 (depends on 1) The solder joining structure according to claim 1, wherein the first structure is a particle-shaped compound, and the second structure is a needle-shaped compound or a pillar-shaped compound. ### Claim 12 (depends on 1) The solder joining structure according to claim 1, wherein the first structure is distributed at an interface of the solder joining layer with the Cu or Cu-alloy member, and the second structure is in contact with the first structure and is distributed on an inner side of the first structure which faces away from the interface. ### Claim 13 (depends on 1) An electronic device comprising the solder joining structure according to claim 1. ### Claim 14 (depends on 1) A semiconductor device comprising the solder joining structure according to claim 1. ### Claim 15 (depends on 2) The solder joining structure according to claim 2, wherein the first structure is a particle-shaped compound, and the second structure is a needle-shaped compound or a pillar-shaped compound. ### Claim 16 (depends on 3) The solder joining structure according to claim 3, wherein the first structure is a particle-shaped compound, and the second structure is a needle-shaped compound or a pillar-shaped compound. ### Claim 17 (depends on 2) The solder joining structure according to claim 2, wherein the first structure is distributed at an interface of the solder joining layer with the Cu or Cu-alloy member, and the second structure is in contact with the first structure and is distributed on an inner side of the first structure which faces away from the interface. ### Claim 18 (depends on 3) The solder joining structure according to claim 3, wherein the first structure is distributed at an interface of the solder joining layer with the Cu or Cu-alloy member, and the second structure is in contact with the first structure and is distributed on an inner side of the first structure which faces away from the interface. ### Claim 19 (depends on 2) An electronic device comprising the solder joining structure according to claim 2. ### Claim 20 (depends on 3) An electronic device comprising the solder joining structure according to claim 3.