# US 10,504,864 B2 · Adhesive composition, electronic-component-mounted substrate and semiconductor device using the adhesive composition

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- Number: US 10,504,864 B2
- Document ID: US10504864B2
- Status: Granted
- Kind: B2
- Application number: 14/963,292
- Filed: 2015-12-09
- Published: 2016-03-31
- Granted: 2019-12-10
- Earliest claimed: 2007-10-03
- Assignees: Hitachi Chemical Company, Ltd.
- Applicants: Hitachi Chemical Company, Ltd.
- Inventors: Kaoru Konno; Hiroki Hayashi; Takashi Kawamori
- Web page: https://patentgrep.com/patent/US10504864B2

## CPC

- B23K 35/302: {Cu as the principal constituent}
- B22F 1/10: Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F 1/103: containing an organic binding agent comprising a mixture of, or obtained by reaction of, two or more components other than a solvent or a lubricating agent
- B23K 35/0244: {Powders, particles or spheres; Preforms made therefrom}
- B23K 35/025: {Pastes, creams or slurries}
- B23K 35/262: {Sn as the principal constituent}
- B23K 35/264: {Bi as the principal constituent}
- B23K 35/3613: {Polymers, e.g. resins}
- B23K 35/3618: {Carboxylic acids or salts}
- B23K 35/362: Selection of compositions of fluxes (B23K35/365, B23K35/368 take precedence)
- B23K 35/365: Selection of non-metallic compositions of coating materials either alone or conjoint with selection of soldering or welding materials
- C09J 9/02: Electrically-conducting adhesives
- C09J 11/04: inorganic
- H01B 1/22: the conductive material comprising metals or alloys
- H05K 3/321: by conductive adhesives
- H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- C08K 3/017: Antistatic agents
- C08K 3/08: Metals
- H05K 1/141: {One or more single auxiliary printed circuits mounted on a main printed circuit, e.g. modules, adapters (H05K1/142 and H05K1/147 take precedence)}
- H05K 2201/0272: Mixed conductive particles, i.e. using different conductive particles, e.g. differing in shape
- H05K 2203/0425: Solder powder or solder coated metal powder
- H10W 72/07251: {characterised by changes in properties of the bump connectors during connecting}
- H10W 72/225: {Bumps having a filler embedded in a matrix}
- H10W 72/251: {Materials}
- H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/253: {not comprising solid metals or solid metalloids, e.g. polymers or ceramics}
- H10W 72/9415: {relative to the surface, e.g. recessed, protruding}
- H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10W 90/728: {between a chip and a stacked discrete passive device, e.g. resistors, capacitors or inductors}
- Y10T 428/31511: Of epoxy ether
- Y10T 428/31678: Of metal
- B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B22F: WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER (making alloys by powder metallurgy C22C); APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- C09J: ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES (preparation of glue or gelatine C09H)
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})
- H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- C08K: Use of inorganic or non-macromolecular organic substances as compounding ingredients (paints, inks, varnishes, dyes, polishes, adhesives C09)
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

There are provided are an adhesive composition that keeps storage stability and further gives a cured product wherein metallic bonds are formed in the state that the cured product wets its components and is satisfactorily spread between the components (or parts), thereby turning excellent in adhesive property, electroconductivity, and reliability for mounting such as TCT resistance or high-temperature standing resistance; an electronic-component-mounted substrate using the same; and a semiconductor device. The adhesive composition comprises electroconductive particles (A) and a binder component (B), wherein the electroconductive particles (A) include a metal (a1) having a melting point equal to or higher than the reflow temperature and containing no lead, and a metal (a2) having a melting point lower than the reflow temperature and containing no lead, and the binder component (B) includes a thermosetting resin composition (b1) and an aliphatic dihydroxycarboxylic acid (b2).

## Claims

### Claim 1

An electronic component structure that two or more electronic components are bonded to each other through an adhesive composition, wherein the adhesive composition comprises electroconductive particles (A) and a binder component (B),
wherein the electroconductive particles (A) comprise a metal (a1) having a melting point equal to or higher than a reflow temperature and containing no lead, and a metal (a2) having a melting point lower than the reflow temperature and containing no lead, and
the binder component (B) comprises a thermosetting resin composition (b1) and an aliphatic dihydroxycarboxylic acid (b2) represented by the following general formula (1):
wherein R1 is an alkyl group which may have a substituent, and n and m are each an integer of 0 to 5,
wherein the thermosetting resin composition (b1) comprises an epoxy resin, and
wherein the content of the aliphatic dihydroxycarboxylic acid (b2) is 0.1 part or more by weight and 20 parts or less by weight for 100 parts by weight of the metal (a2) having the melting point lower than the reflow temperature and containing no lead.

### Claim 2 (depends on 1)

The electronic component structure according to claim 1, wherein R1 in the general formula (1) is an alkyl group having 1 to 5 carbon atom.

### Claim 3 (depends on 1)

The electronic component structure according to claim 1, wherein the aliphatic dihydroxycarboxylic acid (b2) includes any of 2,2-bishydroxymethylpropionic acid, 2,2-bishydroxymethylbutanoic acid, and 2,2-bishydroxymethylpentanoic acid.

### Claim 4 (depends on 1)

The electronic component structure according to claim 1, wherein the reflow temperature is a temperature for mounting with SnAgCu cream solder.

### Claim 5 (depends on 1)

The electronic component structure according to claim 1, wherein the reflow temperature is 260° C.

### Claim 6 (depends on 1)

The electronic component structure according to claim 1, wherein the epoxy resin is derived from bisphenol F.

### Claim 7 (depends on 1)

The electronic component structure according to claim 1, wherein the metal (a1) having the melting point equal to or higher than the reflow temperature and containing no lead is silver-coated copper powder, and the metal (a2) having the melting point lower than the reflow temperature and containing no lead is Sn42-Bi58.

### Claim 8 (depends on 1)

The electronic component structure according to claim 1, further having a substrate bonding to the electronic component structure according to claim 1.

### Claim 9 (depends on 1)

The electronic component structure according to claim 1, wherein the electronic components include a passive component and the other component including a semiconductor element.

### Claim 10 (depends on 1)

The electronic component structure according to claim 1, wherein a ratio of the metal (a1) having the melting point equal to or higher than the reflow temperature and containing no lead: the metal (a2) having the melting point lower than the reflow temperature and containing no lead is 90 to 1% by weight: 10 to 99% by weight.

### Claim 11 (depends on 1)

The electronic component structure according to claim 1, wherein a ratio of the metal (a1) having the melting point equal to or higher than the reflow temperature and containing no lead: the metal (a2) having the melting point lower than the reflow temperature and containing no lead is 70 to 5% by weight: 30 to 95% by weight.

### Claim 12 (depends on 1)

The electronic component structure according to claim 1, wherein a ratio of the metal (a1) having the melting point equal to or higher than the reflow temperature and containing no lead: the metal (a2) having the melting point lower than the reflow temperature and containing no lead is 60 to 10% by weight: 40 to 90% by weight.