# US 10,504,844 B2 · Three-dimensional semiconductor device

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- Number: US 10,504,844 B2
- Document ID: US10504844B2
- Status: Granted
- Kind: B2
- Application number: 15/822,329
- Filed: 2017-11-27
- Published: 2018-09-06
- Granted: 2019-12-10
- Earliest claimed: 2017-03-03
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Young-woo Kim; Joon-sung Lim; Jang-gn Yun; Sung-min Hwang
- Web page: https://patentgrep.com/patent/US10504844B2

## CPC

- H10W 20/47: comprising two or more dielectric layers having different properties, e.g. different dielectric constants
- H10B 41/10: characterised by the top-view layout
- H10B 41/42: Simultaneous manufacture of periphery and memory cells
- H10B 43/10: characterised by the top-view layout
- H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10B 43/35: with cell select transistors, e.g. NAND
- H10B 43/40: characterised by the peripheral circuit region
- H10B 43/50: characterised by the boundary region between the core and peripheral circuit regions
- H10W 20/42: Vias, e.g. via plugs
- H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10D 87/00: Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A three-dimensional (3D) semiconductor device includes a substrate having a cell array region and a peripheral circuit region. A cell array structure is in the cell array region and includes a 3D memory cell array. A peripheral logic structure is in the peripheral circuit region and includes a peripheral circuit transistor. A cell insulating layer insulates the cell array structure. A peripheral insulating layer is insulated from the peripheral logic structure and the cell array region and has a porous layer.

## Claims

### Claim 1

A three-dimensional (3D) semiconductor device, comprising:
a substrate having a cell array region and a peripheral circuit region;
a cell array structure in the cell array region and including a 3D memory cell array;
a peripheral logic structure in the peripheral circuit region and including a peripheral circuit transistor;
a cell insulating layer to insulate the cell array structure; and
a peripheral insulating layer for insulating the peripheral logic structure from the cell array region, wherein
the peripheral insulating layer includes:
a silicon oxide layer covering the peripheral circuit transistor,
a low dielectric layer on the silicon oxide layer and having a lower dielectric constant than the silicon oxide layer, and
a porous layer on the low dielectric layer.

### Claim 2 (depends on 1)

The 3D semiconductor device as claimed in claim 1, wherein the cell insulating layer includes a silicon oxide layer or a low dielectric layer having a lower dielectric constant than the silicon oxide layer.

### Claim 3 (depends on 1)

The 3D semiconductor device as claimed in claim 1, wherein the peripheral insulating layer includes:
a peripheral lower insulating layer on the peripheral circuit transistor,
a peripheral upper insulating layer on the peripheral lower insulating layer, and
a peripheral contact wiring structure electrically connected to the peripheral circuit transistor and in the peripheral insulating layer.

### Claim 4 (depends on 3)

The 3D semiconductor device as claimed in claim 3, wherein the peripheral upper insulating layer includes:
a low dielectric layer on the peripheral lower insulating layer and having a lower dielectric constant than the silicon oxide layer, and
a porous layer on the low dielectric layer.

### Claim 5 (depends on 3)

The 3D semiconductor device as claimed in claim 3, wherein the peripheral lower insulating layer includes:
the silicon oxide layer on the peripheral circuit transistor,
the low dielectric layer on the silicon oxide layer and having the lower dielectric constant than the silicon oxide layer, and
a protective layer on an upper surface and a sidewall of the silicon oxide layer and the low dielectric layer, the protective layer to protect a sidewall of the peripheral circuit region.

### Claim 6 (depends on 1)

The 3D semiconductor device as claimed in claim 1, wherein:
a wiring layer insulated by a wiring insulating layer is in the cell array region, and
a peripheral wiring layer insulated by a peripheral wiring insulating layer is in the peripheral circuit region, and the peripheral wiring layer including a porous layer.

### Claim 7 (depends on 6)

The 3D semiconductor device as claimed in claim 6, wherein:
the wiring insulating layer includes a silicon oxide layer or a low dielectric layer having a lower dielectric constant than the silicon oxide layer,
the peripheral wiring insulating layer includes a low dielectric layer having a lower dielectric constant than the silicon oxide layer.

### Claim 8 (depends on 1)

The 3D semiconductor device as claimed in claim 1, wherein:
the peripheral circuit region and the cell array region are vertically oriented in the substrate,
the peripheral insulating layer is in the substrate or vertically located between the peripheral circuit region and the cell array region.

### Claim 9

A three-dimensional (3D) semiconductor device, comprising:
a substrate having a cell array region and a peripheral circuit region;
a cell array structure in the cell array region and including a 3D memory cell array;
a peripheral logic structure in the peripheral circuit region and including a peripheral circuit transistor;
a cell insulating layer to insulate the cell array structure; and
a peripheral insulating layer insulated from the peripheral logic structure and the cell array region and having a porous layer, wherein the peripheral insulating layer includes:
a peripheral lower insulating layer on the peripheral circuit transistor,
a peripheral upper insulating layer on the peripheral lower insulating layer, and
a peripheral contact wiring structure electrically connected to the peripheral circuit transistor and in the peripheral insulating layer, and wherein the peripheral lower insulating layer includes:
a first material layer on the peripheral circuit transistor and including a silicon oxide layer or a low dielectric layer having a lower dielectric constant than the silicon oxide, and
a second material layer including a porous layer on the first material layer.

### Claim 10 (depends on 9)

The 3D semiconductor device as claimed in claim 9, wherein the peripheral upper insulating layer includes:
a silicon oxide layer on the peripheral lower insulating layer, and
a porous layer on the silicon oxide layer.

### Claim 11

A three-dimensional (3D) semiconductor device, comprising:
a substrate having a cell array region, a contact region, and a peripheral circuit region;
a cell array structure in the cell array region and including a stacked structure and a vertical structure;
a peripheral logic structure in the peripheral circuit region and including a peripheral circuit transistor;
a contact wiring structure in the contact region and electrically connecting the cell array region and the peripheral circuit region;
a cell insulating layer configured to insulate the cell array structure;
a contact insulating layer to insulate the contact wiring structure; and
a peripheral insulating layer that is insulated from the peripheral logic structure and the cell array region, the peripheral insulating layer including a low dielectric layer having a lower dielectric constant than a silicon oxide layer and a porous layer.

### Claim 12 (depends on 11)

The 3D semiconductor device as claimed in claim 11, wherein the stacked structure includes:
a plurality of electrodes that are electrically separated from each other by electrode separation insulating layers, and
the stacked structure has a stepwise structure in a direction from the cell array region to the peripheral circuit region in the contact region.

### Claim 13 (depends on 12)

The 3D semiconductor device as claimed in claim 12, wherein the contact insulating layer includes:
a silicon oxide layer inclined from the cell array region to the peripheral circuit region, and
a porous layer on the inclined silicon oxide layer.

### Claim 14

A three-dimensional (3D) semiconductor device, comprising:
a first region including a 3D cell array;
a second region including a peripheral logic structure;
a first insulating layer in the second region and having a dielectric constant lower than silicon oxide, the first insulating layer between the peripheral logic structure and an area in the second region overlapping the peripheral logic structure; and
a porous layer in the second region, wherein
the porous layer has a hydrogen adsorption function.

### Claim 15 (depends on 14)

The device as claimed in claim 14, wherein:
the area in the second region includes a second insulating layer, and
the porous layer is between the first and second insulating layers.

### Claim 16 (depends on 15)

The device as claimed in claim 15, further comprising:
a silicon oxide layer between the porous layer and the peripheral logic structure, wherein of the first insulating layer is lower than the silicon oxide in the silicon oxide layer.

### Claim 17 (depends on 16)

The device as claimed in claim 16, wherein the first insulating layer is between the porous layer and the silicon oxide layer.