# US 10,504,833 B2 · Interconnection structure and manufacturing method thereof

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- Number: US 10,504,833 B2
- Document ID: US10504833B2
- Status: Granted
- Kind: B2
- Application number: 15/893,538
- Filed: 2018-02-09
- Published: 2018-06-21
- Granted: 2019-12-10
- Earliest claimed: 2014-12-30
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Zhi-Sheng Zheng; Chih-Lin Wang
- Web page: https://patentgrep.com/patent/US10504833B2

## CPC

- H10W 20/42: Vias, e.g. via plugs
- H10W 20/056: {by filling conductive material into holes, grooves or trenches}
- H10W 20/077: {on sidewalls or on top surfaces of conductors (H10W20/076 takes precedence)}
- H10W 20/081: {by forming openings in the dielectric parts}
- H10W 20/435: {Cross-sectional shapes or dispositions of interconnections}
- H10W 20/48: Insulating materials thereof
- H10W 20/063: {by forming conductive members before forming protective insulating material}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

An interconnection structure includes a first dielectric layer, a first conductor, an etch stop layer, and a second dielectric layer. The first conductor is partially in the first dielectric layer and having a portion protruding from the first dielectric layer. The etch stop layer is on the first dielectric layer and covering the protruding portion of the first conductor. The second dielectric layer is on the etch stop layer. A bottom surface of the second dielectric layer has a portion in a position lower than a top of the first conductor.

## Claims

### Claim 1

An interconnection structure, comprising:
a first dielectric layer;
a first conductor partially in the first dielectric layer and having a portion protruding from the first dielectric layer;
an etch stop layer on the first dielectric layer and has a raised portion covering the protruding portion of the first conductor, wherein the raised portion has a cap part over a top surface of the protruding portion of the first conductor and a spacer part over a sidewall of the protruding portion of the first conductor and thicker than the cap part; and
a second dielectric layer on the etch stop layer.

### Claim 2 (depends on 1)

The interconnection structure of claim 1, further comprising:
a second conductor at least partially in the first dielectric layer; and
a third conductor in the second dielectric layer and electrically connected to the second conductor.

### Claim 3 (depends on 2)

The interconnection structure of claim 2, further comprising:
a barrier layer between the etch stop layer and the third conductor.

### Claim 4 (depends on 2)

The interconnection structure of claim 2, wherein the second conductor has a portion protruding from the first dielectric layer.

### Claim 5 (depends on 4)

The interconnection structure of claim 4, further comprising:
a barrier layer over a sidewall of the protruding portion of the second conductor.

### Claim 6 (depends on 1)

The interconnection structure of claim 1, wherein a bottom surface of the second dielectric layer is lower than a top surface of the first conductor.

### Claim 7 (depends on 2)

The interconnection structure of claim 2, wherein the third conductor tapers toward the second conductor and is on opposite sidewalls of the second conductor.

### Claim 8

An interconnection structure, comprising:
a first dielectric layer;
a first conductor at least partially in the first dielectric layer;
an etch stop layer on the first dielectric layer;
a second dielectric layer on the etch stop layer, wherein an interface between the etch stop layer and the second dielectric layer has a first portion in a first position lower than a top of the first conductor and a second portion in a second position higher than the top of the first conductor; and
a second conductor in the second dielectric layer and electrically connected to the first conductor, wherein the second conductor has an extending portion that extends through the first portion of the interface between the etch stop layer and the second dielectric layer and the extending portion of the second conductor is on opposite sidewalls of the first conductor.

### Claim 9 (depends on 8)

The interconnection structure of claim 8, wherein the second conductor tapers toward the first conductor.

### Claim 10 (depends on 8)

The interconnection structure of claim 8, wherein the etch stop layer has a portion surrounding the first conductor, and said portion of the etch stop layer has a top surface in a third position lower than the first position.

### Claim 11 (depends on 10)

The interconnection structure of claim 10, further comprising:
a barrier layer contacting said portion of the etch stop layer.

### Claim 12 (depends on 8)

The interconnection structure of claim 8, further comprising:
a third conductor at least partially in the first dielectric layer, wherein the etch stop layer covers the third conductor.

### Claim 13 (depends on 12)

The interconnection structure of claim 12, wherein the third conductor has a portion protruding from the first dielectric layer.

### Claim 14 (depends on 13)

The interconnection structure of claim 13, wherein the etch stop layer has a raised portion conformally over the protruding portion of the third conductor.

### Claim 15 (depends on 8)

The interconnection structure of claim 8, wherein the etch stop layer has a raised portion covering a protruding portion of the first conductor and the raised portion has a cap part over a top surface of the protruding portion of the first conductor and a spacer part over a sidewall of the protruding portion of the first conductor and thicker than the cap part.

### Claim 16

A method for manufacturing an interconnection structure, the method comprising:
etching a first hole in a first dielectric layer;
depositing a first conductor in the first hole;
etching back the first dielectric layer, such that the first conductor has a portion protruding from the first dielectric layer;
conformally depositing an etch stop layer on the first dielectric layer and the protruding portion of the first conductor;
depositing a second dielectric layer on the etch stop layer;
etching a second hole in the second dielectric layer and the etch stop layer to expose the first conductor and to form a recess surrounding the first conductor; and
depositing a barrier layer to line the recess.

### Claim 17 (depends on 16)

The method of claim 16, further comprising:
etching a second hole in the first dielectric layer;
depositing a second conductor in the second hole in the first dielectric layer, wherein conformally depositing the etch stop layer comprises conformally depositing a portion of the etch stop layer over the second conductor;
etching a third hole in the second dielectric layer and the etch stop layer to expose the second conductor, wherein the protruding portion of the first conductor is covered by the etch stop layer after etching the third hole; and
depositing a third conductor in the third hole.

### Claim 18 (depends on 17)

The method of claim 17, wherein etching the third hole is performed such that the third hole tapers toward the second conductor.

### Claim 19 (depends on 16)

The method of claim 16, wherein conformally depositing the etch stop layer is performed such that the etch stop layer has a raised portion covering the protruding portion of the first conductor.

### Claim 20 (depends on 16)

The method of claim 16, further comprising depositing a second conductor in the second hole.