# US 10,504,803 B2 · Substrate processing system, control device, and film deposition method and program

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- Number: US 10,504,803 B2
- Document ID: US10504803B2
- Status: Granted
- Kind: B2
- Application number: 15/936,952
- Filed: 2018-03-27
- Published: 2018-10-04
- Granted: 2019-12-10
- Earliest claimed: 2017-03-28
- Assignees: Tokyo Electron Limited
- Applicants: Tokyo Electron Limited
- Inventors: Yuichi Takenaga; Takahito Kasai
- Web page: https://patentgrep.com/patent/US10504803B2

## CPC

- H10P 74/23: {characterised by multiple measurements, corrections, marking or sorting processes}
- C23C 16/4583: {the substrate being supported substantially horizontally}
- C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)}
- G05B 19/188: {characterised by special applications and not provided for in the relevant subclasses, (e.g. making dies, filament winding)}
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- G05B 2219/40066: Stack and align identical layers, laminates, electronic substrate layers
- H10P 72/0402: {Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence)}
- H10P 74/203: {Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- G05B: CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS (systems for controlling or regulating non-electric variables G05D; systems for regulating electric or magnetic variables G05F; control devices or systems insofar as characterised by mechanical features only G05G)

## Abstract

Disclosed is a substrate processing system that performs a film deposition on plural substrates in a processing container using a film deposition condition calculated based on a characteristic of a film deposited on at least one of the substrates. The substrate processing system includes: a storage unit storing surface state information and arrangement state information that represent influences of a surface state of the one substrate and an arrangement state of the plural substrates on the characteristic of the film deposited on the one substrate, respectively; a calculation unit calculating information that represents an influence of the plural substrates on the characteristic of the film on the one substrate based on the surface state information and the arrangement state information stored in the storage unit; and a correction unit correcting the characteristic of the film deposited on the one substrate based on the information calculated by the calculation unit.

## Claims

### Claim 1

A substrate processing system that performs a film deposition processing on a plurality of substrates accommodated in a processing container, the substrate processing system comprising:
a memory configured to store surface state information that represents an influence of a surface state of at least one substrate on a characteristic of a film deposited on the at least one substrate among the plurality of substrates and arrangement state information that represents an influence of an arrangement state of the plurality of substrates in the processing container on the characteristic of the film deposited on the at least one substrate; and
a processor coupled to the memory and configured to:
calculate information that represents an influence of the plurality of substrates on the characteristic of the film on the at least one substrate based on the surface state information and the arrangement state information stored in the storage unit; and
correct the characteristic of the film deposited on the at least one substrate based on the calculated information that represents the influence of the plurality of substrates on the characteristic of the film on the at least one substrate.

### Claim 2 (depends on 1)

The substrate processing system of claim 1, wherein the surface state information includes film type information that represents a type of the film deposited on the substrate.

### Claim 3 (depends on 2)

The substrate processing system of claim 2, wherein the surface state information includes surface area information that represents a surface area of the substrate.

### Claim 4 (depends on 3)

The substrate processing system of claim 3, wherein the arrangement state information includes information on a number of substrates that represents the number of substrates disposed on a path from a gas introducing portion which supplies a gas into the processing container to the at least one substrate.

### Claim 5 (depends on 4)

The substrate processing system of claim 4, wherein, assuming that correction coefficients obtained by digitizing information representing an influence of the film type information and the surface area information on the characteristic of the film deposited on the at least one substrate are ak and bk (k is an integer), respectively, and the number of the substrates disposed on the path from the gas introducing portion to the at least one substrate is n, a correction value obtained by digitizing the information representing the influence of the plurality of substrates on the characteristic of the film on the at least one substrate is calculated by Equation 1 as follows
∑
k
=
1
n
⁢
⁢
(
a
k
×
b
k
)
.
[
Equation
⁢
⁢
1
]

### Claim 6 (depends on 1)

The substrate processing system of claim 1, wherein the arrangement state information includes adjacent film type information representing a type of a film deposited on a substrate adjacent to a surface of a side on which a film deposition is performed on the at least one substrate.

### Claim 7 (depends on 6)

The substrate processing system of claim 6, wherein assuming that a correction coefficient obtained by digitizing the adjacent film type information is c, a correction value obtained by digitizing the information representing the influence of the plurality of substrates on the characteristic of the film on the at least one substrate is calculated by Equation 2 as follows
∑
k
=
1
n
⁢
⁢
(
a
k
×
b
k
)
+
c
.
[
Equation
⁢
⁢
2
]

### Claim 8 (depends on 1)

The substrate processing system of claim 1, wherein the at least one substrate is a monitor substrate provided for monitoring a characteristic of a film to be deposited on a product substrate.

### Claim 9

A controller configured to control a substrate processing apparatus, the substrate processing apparatus configured to perform a film deposition processing on a plurality of substrates accommodated in a processing container, the controller comprising:
a memory configured to store surface state information that represents an influence of a surface state of at least one substrate on a characteristic of a film deposited on the at least one substrate among the plurality of substrates and arrangement state information that represents an influence of an arrangement state of the plurality of substrates in the processing container on the characteristic of the film deposited on the at least one substrate; and
a processor coupled to the memory and configured to:
calculate information that represents an influence of the plurality of substrates on the characteristic of the film on the at least one substrate based on the surface state information and the arrangement state information stored in the memory; and
correct the characteristic of the film deposited on the at least one substrate based on the calculated information that represents an influence of the plurality of substrates on the characteristic of the film on the at least one substrate.

### Claim 10

A film deposition method of performing a film deposition processing on a plurality of substrates accommodated in a processing container using a film deposition condition calculated based on a characteristic of a film deposited on at least one substrate among the plurality of substrates, the film deposition method comprising:
calculating information that represents an influence of the plurality of substrates on the characteristic of the film on the at least one substrate based on surface state information that represents an influence of a surface state of the substrate on the characteristic of the film deposited on the at least one substrate and arrangement state information that represents an influence of an arrangement state of the plurality of substrates in the processing container on the characteristic of the film deposited on the at least one substrate; and
correcting the characteristic of the film deposited on the at least one substrate based on the information calculated by the calculating.

### Claim 11 (depends on 10)

A non-transitory computer-readable storage medium storing a computer executable program that, when executed, causes a computer to perform the film deposition method of claim 10.