# US 10,504,787 B2 · FinFET with sloped surface at interface between isolation structures > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,504,787 B2 - Document ID: US10504787B2 - Status: Granted - Kind: B2 - Application number: 16/227,422 - Filed: 2018-12-20 - Published: 2019-05-02 - Granted: 2019-12-10 - Earliest claimed: 2015-09-04 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Company, Ltd. - Inventors: Chih-Sheng Li; Hsin-Chieh Huang; Chi-Wen Liu - Web page: https://patentgrep.com/patent/US10504787B2 ## CPC - H10D 84/038: {using silicon technology, e.g. SiGe} - H10D 84/0156: {Manufacturing their doped wells} - H10D 84/0158: {the components including FinFETs} - H10D 84/834: {comprising FinFETs} - H10P 50/28: of insulating materials - H10P 50/283: {by chemical means} - H10D 84/0151: {Manufacturing their isolation regions} - H10D 84/0191: {Manufacturing their doped wells} - H10D 84/0193: {the components including FinFETs} - H10D 84/853: {comprising FinFETs} - H10P 30/40: into insulating materials - H10P 32/20: Diffusion for doping of insulating layers - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor device includes a substrate, a first insulating structure, a second insulating structure, at least one first active semiconductor fin, and at least one second active semiconductor fin. The first insulating structure and the second insulating structure are disposed on the substrate. The first active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the first insulating structure. The second active semiconductor fin is disposed on the substrate and has a protruding portion protruding from the second insulating structure. The protruding portion of the first active semiconductor fin and the protruding portion of the second active semiconductor fin have different heights. ## Claims ### Claim 1 A device comprising: a substrate; a first isolation structure and a second isolation structure over the substrate; a first active fin over the substrate and protruding above a first top surface of the first isolation structure; and a second active fin over the substrate and protruding above a second top surface of the second isolation structure, wherein the first top surface of the first isolation structure and the second top surface of the second isolation structure are sloped at an interface between the first isolation structure and the second isolation structure. ### Claim 2 (depends on 1) The device of claim 1, wherein the first isolation structure has a first thickness, and wherein the second isolation structure has a second thickness different from the first thickness. ### Claim 3 (depends on 1) The device of claim 1, wherein a first protruding portion of the first active fin has a first height, and wherein a second protruding portion of the second active fin has a second height different from the first height. ### Claim 4 (depends on 1) The device of claim 1, wherein the first isolation structure comprises first dopants, and wherein the second isolation structure comprises second dopants different from the first dopants. ### Claim 5 (depends on 1) The device of claim 1, wherein an acute angle is formed between the first top surface of the first isolation structure and a sidewall of the first active fin. ### Claim 6 (depends on 1) The device of claim 1, further comprising a first dummy fin and a second dummy fin over the substrate, wherein the first isolation structure covers the first dummy fin, and wherein a second isolation structure covers the second dummy fin. ### Claim 7 (depends on 6) The device of claim 6, wherein the first dummy fin has a concave top surface, and wherein the second dummy fin has a convex top surface. ### Claim 8 A device comprising: a substrate; a first isolation structure over the substrate, the first isolation structure comprising first dopants; a second isolation structure over the substrate, the second isolation structure comprising second dopants different from the first dopants; a first active fin over the substrate and protruding above a first top surface of the first isolation structure, a first protruding portion of the first active fin having a first height; and a second active fin over the substrate and protruding above a second top surface of the second isolation structure, a second protruding portion of the second active fin having a second height different from the first height, wherein the first top surface of the first isolation structure and the second top surface of the second isolation structure are sloped at an interface between the first isolation structure and the second isolation structure. ### Claim 9 (depends on 8) The device of claim 8, wherein a first acute angle is formed between the first top surface of the first isolation structure and a sidewall of the first active fin. ### Claim 10 (depends on 9) The device of claim 9, wherein a second acute angle is formed between the second top surface of the second isolation structure and a sidewall of the second active fin. ### Claim 11 (depends on 9) The device of claim 9, wherein the first acute angle is between about 35 degrees and about 55 degrees. ### Claim 12 (depends on 8) The device of claim 8, wherein the first isolation structure has a first thickness, and wherein the second isolation structure has a second thickness different from the first thickness. ### Claim 13 (depends on 8) The device of claim 8, wherein the first dopants are p-type dopants, and wherein the second dopants are n-type dopants. ### Claim 14 A device comprising: a substrate; a first isolation structure over the substrate, the first isolation structure comprising p-type dopants; a second isolation structure over the substrate, the second isolation structure comprising n-type dopants; a first active fin over the substrate and protruding above a first top surface of the first isolation structure, wherein a first acute angle is formed between the first top surface of the first isolation structure and a sidewall of the first active fin; and a second active fin over the substrate and protruding above a second top surface of the second isolation structure, wherein a second acute angle is formed between the second top surface of the second isolation structure and a sidewall of the second active fin. ### Claim 15 (depends on 14) The device of claim 14, wherein the first acute angle is between about 35 degrees and about 55 degrees. ### Claim 16 (depends on 14) The device of claim 14, wherein the second acute angle is between about 35 degrees and about 55 degrees. ### Claim 17 (depends on 14) The device of claim 14, wherein the first top surface of the first isolation structure and the second top surface of the second isolation structure are sloped at an interface between the first isolation structure and the second isolation structure. ### Claim 18 (depends on 17) The device of claim 17, wherein the interface between the first isolation structure and the second isolation structure is interposed between the first active fin and the second active fin. ### Claim 19 (depends on 14) The device of claim 14, further comprising a plurality of dummy fins over the substrate and between the first active fin and the second active fin, the first isolation structure covering a first subset of the plurality of dummy fins, the second isolation structure covering a second subset of the plurality of dummy fins, the second subset of the plurality of dummy fins being different from the first subset of the plurality of dummy fins. ### Claim 20 (depends on 8) The device of claim 8, further comprising at least one dummy fin over the substrate and between the first active fin and the second active fin, the first isolation structure extending along sidewalls and a top surface of the at least one dummy fin.