# US 10,504,785 B2 · Semiconductor device

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- Number: US 10,504,785 B2
- Document ID: US10504785B2
- Status: Granted
- Kind: B2
- Application number: 15/989,337
- Filed: 2018-05-25
- Published: 2018-09-27
- Granted: 2019-12-10
- Earliest claimed: 2016-06-03
- Assignees: Fuji Electric Co., Ltd.
- Applicants: Fuji Electric Co., Ltd.
- Inventors: Shoji Yamada; Takashi Shiigi; Yasuyuki Hoshi
- Web page: https://patentgrep.com/patent/US10504785B2

## CPC

- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/146: {the built-in components being Schottky barrier diodes}
- H10D 12/031: {of IGBTs}
- H10D 30/63: Vertical IGFETs (H10D30/66 {, H10D30/6728, H10D30/689, H10D30/693} take precedence)
- H10D 30/668: {having trench gate electrodes, e.g. UMOS transistors}
- H10D 62/10: Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D 62/393: {Body regions of DMOS transistors or IGBTs (cell layout of DMOS H10D62/127)}
- H10D 62/8325: {Silicon carbide}
- H10D 84/00: Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D 84/0126: {the components including insulated gates, e.g. IGFETs}
- H10D 84/143: {the built-in components being PN junction diodes}
- H10D 84/811: {Combinations of field-effect devices and one or more diodes, capacitors or resistors}
- H10D 8/00: Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00)
- H10D 8/411: {PN diodes having planar bodies}
- H10D 62/83: being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A main semiconductor element and a temperature sensing part are arranged on a single silicon carbide base. The main semiconductor element is a vertical MOSFET and the temperature sensing part is a horizontal diode. An anode region of the temperature sensing part and an n+-type source region and a p+-type contact region of the main semiconductor element are connected by wiring by an anode electrode on a front surface of the silicon carbide base. The temperature sensing part, when the main semiconductor element is ON, is forward biased by drift current flowing in the main semiconductor element. The temperature sensing part, for example, is a poly-silicon diode constituted by a p-type poly-silicon layer and an n-type poly-silicon layer arranged on the front surface of the silicon carbide base. With such configuration, a semiconductor device having high reliability may be provided.

## Claims

### Claim 1

A semiconductor device comprising:
a semiconductor element having:
a first semiconductor layer of a first conductivity type, the first semiconductor layer being a portion of a front surface side of a semiconductor substrate of the first conductivity type;
a first semiconductor region of a second conductivity type provided selectively in the first semiconductor layer;
a second semiconductor region of the first conductivity type provided selectively in the first semiconductor region;
a gate insulating film provided in contact with a region of the first semiconductor region between the first semiconductor layer and the second semiconductor region;
a gate electrode provided opposing the first semiconductor region, across the gate insulating film;
a first electrode layer electrically connected to the first semiconductor region and the second semiconductor region;
a second semiconductor layer of the first conductivity type, the second semiconductor layer being a portion of a rear side of the semiconductor substrate, in contact with the first semiconductor layer, the second semiconductor layer having an impurity concentration that is higher than an impurity concentration of the first semiconductor layer; and
a second electrode layer in contact with the second semiconductor layer; and
a diode arranged in the semiconductor substrate, the diode detecting a temperature of the semiconductor element by passing current through the diode based on the semiconductor substrate having a predetermined temperature, the diode including an anode region and a third electrode layer, wherein
the anode region of the diode is electrically connected to the first semiconductor region and the second semiconductor region via the third electrode layer the third electrode layer being arranged on a front surface of the semiconductor substrate and not connected to the first electrode layer.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein
the diode has:
a poly-silicon layer of the second conductivity type provided on the front surface of the semiconductor substrate, the poly-silicon layer of the second conductivity type constituting the anode region;
a poly-silicon layer of the first conductivity type provided on the front surface of the semiconductor substrate, in contact with the poly-silicon layer of the second conductivity type;
the third electrode layer in contact with the first semiconductor region, the second semiconductor region, and the poly-silicon layer of the second conductivity type; and
a fourth electrode layer in contact with the poly-silicon layer of the first conductivity type.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein
the diode has:
a third semiconductor region of the second conductivity type provided selectively in the first semiconductor layer;
a fourth semiconductor region of the second conductivity type provided selectively in the third semiconductor region and constituting the anode region, the fourth semiconductor region having an impurity concentration that is higher than an impurity concentration of the third semiconductor region;
a fifth semiconductor region of the first conductivity type provided selectively in the third semiconductor region;
the third electrode layer in contact with the first semiconductor region, the second semiconductor region, and the fourth semiconductor region; and
a fourth electrode layer in contact with the fifth semiconductor region.

### Claim 4 (depends on 3)

The semiconductor device according to claim 3, further comprising
a sixth semiconductor region of the first conductivity type provided between the third semiconductor region and, the fourth semiconductor region and the fifth semiconductor region, the sixth semiconductor region having an impurity concentration that is lower than an impurity concentration of the fifth semiconductor region, wherein
the third semiconductor region is fixed at a same potential as a potential of the first electrode layer.

### Claim 5 (depends on 4)

The semiconductor device according to claim 4, wherein
the sixth semiconductor region, the third semiconductor region and the first semiconductor layer constitute a parasitic npn bipolar transistor, the parasitic npn bipolar transistor being voltage driven by a voltage applied between the first electrode layer and the second electrode layer of the semiconductor element.

### Claim 6 (depends on 1)

The semiconductor device according to claim 1, wherein
the diode is voltage driven by a gate threshold voltage of the semiconductor element.

### Claim 7 (depends on 1)

The semiconductor device according to claim 1, wherein
the semiconductor substrate contains a semiconductor material having a bandgap wider than a bandgap of silicon.

### Claim 8 (depends on 7)

The semiconductor device according to claim 7, wherein
the semiconductor material having a bandgap wider than a bandgap of silicon is silicon carbide.