# US 10,504,773 B2 · Fluorimetry systems

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- Number: US 10,504,773 B2
- Document ID: US10504773B2
- Status: Granted
- Kind: B2
- Application number: 15/687,506
- Filed: 2017-08-27
- Published: 2017-12-28
- Granted: 2019-12-10
- Earliest claimed: 2007-02-07
- Assignees: Micron Technology, Inc.
- Applicants: Micron Technology, Inc.
- Inventors: David H. Wells
- Web page: https://patentgrep.com/patent/US10504773B2

## CPC

- H10W 10/20: Air gaps
- H10P 14/271: {characterised by the preparation of substrate for selective deposition}
- H10P 14/278: {Pendeoepitaxy}
- H10P 14/29: {characterised by the substrates}
- H10P 14/2905: {Silicon, silicon germanium or germanium}
- H10P 14/3238: {being insulating materials}
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10W 10/021: {of air gaps}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of materials. Some embodiments include constructions having micro-structures therein which correspond to voids, conduits, insulative structures, semiconductor structures or conductive structures.

## Claims

### Claim 1

A fluorimetry system, comprising:
a sample holder comprising:
a silicon-containing substrate;
a pair of silicon dioxide-containing projections extending upwardly from the substrate;
a silicon dioxide-containing cover extending across the projections; the substrate, projections and cover together encompassing a sample-retaining conduit;
a source of electromagnetic radiation configured to emit radiation through either the substrate, projections or the cover; and
a detector configured to detect electromagnetic radiation passing out of the sample-retaining conduit, the detector being configured to detect radiation at about 90 degrees relative to a direction along which the source emits radiation.

### Claim 2 (depends on 1)

The fluorimetry system of claim 1 wherein the source is configured to emit the radiation through the substrate.

### Claim 3 (depends on 1)

The fluorimetry system of claim 1 wherein the source is configured to emit the radiation through the projections.

### Claim 4 (depends on 1)

The fluorimetry system of claim 1 wherein the source is configured to emit the radiation through the cover.

### Claim 5 (depends on 1)

The fluorimetry system of claim 1 wherein the substrate comprises monocrystalline silicon.

### Claim 6 (depends on 1)

The fluorimetry system of claim 1 wherein the substrate comprises silicon dioxide.

### Claim 7 (depends on 1)

The fluorimetry system of claim 1 wherein the substrate consists of silicon dioxide.