# US 10,504,771 B2 · Semiconductor device including strained germanium and method for manufacturing the same

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- Number: US 10,504,771 B2
- Document ID: US10504771B2
- Status: Granted
- Kind: B2
- Application number: 15/416,727
- Filed: 2017-01-26
- Published: 2018-03-15
- Granted: 2019-12-10
- Earliest claimed: 2016-09-13
- Assignees: Korea Institute of Science and Technology
- Applicants: Korea Institute of Science and Technology
- Inventors: Hyung-Jun Kim; Sanghyeon Kim; Jae-Phil Shim; Yeon-Su Kim; Heejeong Lim
- Web page: https://patentgrep.com/patent/US10504771B2

## CPC

- H10P 90/1914: {using bonding}
- H10D 62/115: {Dielectric isolations, e.g. air gaps}
- H10D 62/117: {Shapes of semiconductor bodies}
- H10D 62/83: being Group IV materials, e.g. B-doped Si or undoped Ge
- H10P 14/2909: {Phosphides}
- H10P 14/3221: {Arsenides}
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method for manufacturing a semiconductor device includes: forming a sacrificial layer on a first substrate, the sacrificial layer being made of a material whose lattice constant is different from that of germanium (Ge) by a preset threshold or below; forming a germanium (Ge) layer on the sacrificial layer; forming an insulation layer on a second substrate; bonding the germanium (Ge) layer onto the insulation layer; and removing the sacrificial layer and the first substrate by etching the sacrificial layer in a state where the germanium (Ge) layer is bonded to the insulation layer. In this method, a germanium-on-insulator (GeOI) structure having various surface orientations may be formed by means of epitaxial lift-off (ELO), and a strain may be applied to the germanium (Ge) layer using a lattice constant of the sacrificial layer.

## Claims

### Claim 1

A method for manufacturing a semiconductor device, the method comprising:
forming a sacrificial layer on a first substrate, the sacrificial layer being made of a material whose lattice constant is different from a lattice constant of germanium (Ge) by about 0.2% to about 5% in absolute value;
forming a germanium (Ge) layer on the sacrificial layer such that the sacrificial layer is disposed between the first substrate and the germanium (Ge) layer and a strain as a result of the difference in lattice constant between the germanium (Ge) layer and the sacrificial layer is applied to the germanium (Ge) layer;
forming an insulation layer on a second substrate;
bonding the germanium (Ge) layer formed on the sacrificial layer onto the insulation layer; and
selectively etching the sacrificial layer to concurrently remove the sacrificial layer and the first substrate from the germanium (Ge) layer,
wherein the strain is maintained in the germanium (Ge) layer after the removing of the sacrificial layer.

### Claim 2 (depends on 1)

The method for manufacturing a semiconductor device according to claim 1, wherein the sacrificial layer includes any material selected from the group consisting of aluminum phosphate (AlP), gallium phosphate (GaP), gallium aluminum phosphate (GaAlP), silicon (Si), aluminum arsenide (AlAs), gallium arsenide (GaAs), indium gallium arsenide (InGaAs), indium phosphide (InP), indium aluminum arsenide (InAlAs), and combinations of two or more thereof.

### Claim 3 (depends on 2)

The method for manufacturing a semiconductor device according to claim 2, wherein the sacrificial layer is made of indium aluminum arsenide (InAlAs), and
wherein a magnitude of the strain applied to the germanium (Ge) layer is determined according to compositions of indium (In) and aluminum (Al) in the sacrificial layer.

### Claim 4 (depends on 1)

The method for manufacturing a semiconductor device according to claim 1, further comprising:
patterning the sacrificial layer and the germanium (Ge) layer into a predetermined shape before bonding the germanium (Ge) layer onto the insulation layer.

### Claim 5 (depends on 4)

The method for manufacturing a semiconductor device according to claim 4, wherein the predetermined shape has a plurality of strip shapes extending in one direction, and a uniaxial strain is applied to the germanium (Ge) layer.

### Claim 6 (depends on 4)

The method for manufacturing a semiconductor device according to claim 4, wherein the predetermined shape has a plurality of square shaped patterns arranged in a two-dimensional array, and a biaxial strain is applied to the germanium (Ge) layer.

### Claim 7 (depends on 1)

The method for manufacturing a semiconductor device according to claim 1, wherein the first substrate is made of III-V compound semiconductors, and
wherein the sacrificial layer is formed on the first substrate by means of epitaxy growth.

### Claim 8 (depends on 7)

The method for manufacturing a semiconductor device according to claim 7, wherein the first substrate contains indium phosphide (InP).

### Claim 9 (depends on 1)

The method for manufacturing a semiconductor device according to claim 1, wherein the second substrate is made of silicon.