# US 10,504,770 B2 · FinFET structure with different fin heights and method for forming the same

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- Number: US 10,504,770 B2
- Document ID: US10504770B2
- Status: Granted
- Kind: B2
- Application number: 16/010,628
- Filed: 2018-06-18
- Published: 2018-10-18
- Granted: 2019-12-10
- Earliest claimed: 2013-02-27
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: Yu-Lien Huang; Chi-Kang Liu; Chi-Wen Liu
- Web page: https://patentgrep.com/patent/US10504770B2

## CPC

- H10W 10/014: {using trench refilling with dielectric materials, e.g. shallow trench isolations}
- H10D 84/0128: {Manufacturing their channels}
- H10D 84/013: {Manufacturing their source or drain regions, e.g. silicided source or drain regions}
- H10D 84/0158: {the components including FinFETs}
- H10D 84/0167: {Manufacturing their channels}
- H10D 84/017: {Manufacturing their source or drain regions, e.g. silicided source or drain regions}
- H10D 84/0193: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/853: {comprising FinFETs}
- H10P 30/22: using masks
- H10P 50/642: {Chemical etching}
- H10P 95/90: Thermal treatments, e.g. annealing or sintering
- H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method for forming FinFETs comprises forming a plurality of first fins and a plurality of second fins over a substrate and embedded in isolation regions, depositing a first photoresist layer over the substrate, removing the first photoresist layer over an n-type region, applying a first ion implantation process to the first isolation regions, wherein dopants with a first polarity type are implanted in the first isolation regions, depositing a second photoresist layer over the substrate, removing the second photoresist layer over a p-type region, applying a second ion implantation process to the second isolation regions, wherein dopants with a second polarity type are implanted in the second isolation regions, applying an annealing process to the isolation regions and recessing the first isolation regions and the second isolation regions through an etching process.

## Claims

### Claim 1

A semiconductor device comprising:
a first fin and a second fin over a substrate;
a first isolation region between the first fin and the second fin, the first isolation region comprising:
a first material extending from the first fin to the second fin;
a first concentration of a first type of dopants within the first material;
a second concentration of a second type of dopants different from the first type of dopants, the second type of dopants being within the first material; and
an interface between the first concentration of the first type of dopants and the second concentration of the second type of dopants;
a step on a top surface of the first isolation region, a sidewall of the step being located directly over the interface, wherein an upper portion of the first fin is of a first height, and wherein an upper portion of the second fin is of a second height, and wherein the first height is greater than the second height, wherein the second height is measured from a top surface of the second fin to a top surface of the first isolation region.

### Claim 2 (depends on 1)

The semiconductor device of claim 1, wherein a difference between the first height and the second height is greater than or equal to about 2 nm.

### Claim 3 (depends on 1)

The semiconductor device of claim 1, wherein the first fin is part of an NMOS transistor.

### Claim 4 (depends on 3)

The semiconductor device of claim 3, wherein the second fin is part of a PMOS transistor.

### Claim 5 (depends on 1)

The semiconductor device of claim 1, wherein the first concentration is equal to or less than 1018 cm−3.

### Claim 6 (depends on 5)

The semiconductor device of claim 5, wherein the second concentration is equal to or less than 1018 cm−3.

### Claim 7 (depends on 1)

The semiconductor device of claim 1, further comprising:
a source/drain region; and
a spacer located at least partially over the source/drain region.

### Claim 8

A semiconductor device comprising:
a plurality of isolation regions in a substrate:
a first fin surrounded by a first isolation region; and
a second fin surrounded by a second isolation region;
a first ion implantation region within the first isolation region, the first ion implantation region comprising dopants with a first polarity type;
a second ion implantation region within the second isolation region, wherein the second ion implantation region comprises dopants with a second polarity type different from the first polarity type;
a step within a top surface of one of the plurality of isolation regions between the first fin and the second fin, the step having a sidewall that is located over an interface between the first ion implantation region and the second ion implantation region, wherein the top surface extends from the first fin to the second fin, wherein a first portion of the first fin extends from a top surface of the first isolation region to a top surface of the first fin, and a first portion of the second fin is over a top surface of the second isolation region, and wherein a height of the first portion of the first fin is greater than a height of the first portion of the second fin, the first fin being in an n-type region and the second fin being in a p-type region, the first ion implantation region being on a first side of the step and the second ion implantation region being located on a second side of the step opposite the first side.

### Claim 9 (depends on 8)

The semiconductor device of claim 8, wherein the height difference is greater than or equal to 2 nm.

### Claim 10 (depends on 8)

The semiconductor device of claim 8, wherein the dopants with the first polarity type have a first concentration within the first isolation region of equal to or less than 1018 cm−3.

### Claim 11 (depends on 8)

The semiconductor device of claim 8, wherein the dopants with the second polarity type have a second concentration within the second isolation region of equal to or less than 1018 cm−3.

### Claim 12 (depends on 8)

The semiconductor device of claim 8, further comprising:
an epitaxial first source/drain region adjacent to the first fin; and
a spacer located at least partially over the epitaxial first source/drain region.

### Claim 13 (depends on 8)

The semiconductor device of claim 8, wherein the first ion implantation region has a first etching rate for a first etchant of about 34.7 Angstroms per minute.

### Claim 14 (depends on 13)

The semiconductor device of claim 13, wherein the second ion implantation region has a second etching rate for the first etchant of about 52.8 Angstroms per minute.

### Claim 15

A semiconductor device comprising:
a plurality of first fins and a plurality of second fins over a substrate and embedded in isolation regions, wherein:
the first fins are in an n-type region over the substrate and surrounded by first isolation regions; and
the second fins are in a p-type region over the substrate and surrounded by second isolation regions;
a first ion implantation region within the first isolation regions, wherein dopants with a first polarity type are located in the first ion implantation region;
a second ion implantation region within the second isolation regions, wherein dopants with a second polarity type are located within the second ion implantation region, wherein an interface is located between the first ion implantation region and the second ion implantation region;
a single step on a top surface of an isolation region between the n-type region and the p-type region, wherein the step is located directly over the interface and wherein the first fins extend away from the first isolation regions further than the second fins extend away from the second isolation regions.

### Claim 16 (depends on 15)

The semiconductor device of claim 15, wherein the dopants with the first polarity type have a concentration within the first ion implantation region of equal to or less than 1018 cm−3.

### Claim 17 (depends on 15)

The semiconductor device of claim 15, wherein the dopants with the second polarity type have a concentration within the second ion implantation region of equal to or less than 1018 cm−3.

### Claim 18 (depends on 15)

The semiconductor device of claim 15, further comprising:
a source/drain region adjacent to one of the first fins, the source/drain region extending beyond a top surface of the one of the first fins; and
a first spacer extending at least partially over the source/drain region.

### Claim 19 (depends on 15)

The semiconductor device of claim 15, wherein the first ion implantation region has a first etching rate for a first etchant of about 34.7 Angstroms per minute.

### Claim 20 (depends on 19)

The semiconductor device of claim 19, wherein the second ion implantation region has a second etching rate for the first etchant of about 52.8 Angstroms per minute.