# US 10,504,757 B2 · Substrate processing apparatus and method of adjusting substrate processing apparatus

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- Number: US 10,504,757 B2
- Document ID: US10504757B2
- Status: Granted
- Kind: B2
- Application number: 15/378,595
- Filed: 2016-12-14
- Published: 2017-06-15
- Granted: 2019-12-10
- Earliest claimed: 2015-12-15
- Assignees: Tokyo Electron Limited
- Applicants: Tokyo Electron Limited
- Inventors: Kenichi Shigetomi; Takeshi Saikusa; Eiichi Sekimoto; Takayuki Fukudome; Kousuke Yoshihara; Suguru Enokida; Kazuhiro Takeshita; Kazuto Umeki
- Web page: https://patentgrep.com/patent/US10504757B2

## CPC

- H10P 72/0602: {Temperature monitoring}
- H05B 1/0233: {for semiconductors manufacturing}
- H10P 72/0432: {mainly by conduction}
- H05B 2203/037: Heaters with zones of different power density
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL

## Abstract

A substrate processing apparatus includes plural heating modules each including a table on which a substrate is placed to be heated, the substrate having plural heated zones. The table has plural heaters each assigned to heat respective ones of the heated zones. Heat generation of the heaters is controlled independently. A control unit controls the heaters such that integrated quantities of heat of the respective heated zones given by the corresponding heaters from first to second time point are substantially identical to each other in each of the heating modules, and are substantially identical to each other among the heating modules. The first time point is set when a temperature transition profile of the substrate is rising toward a process temperature after placing the substrate on the table under a condition where heat generation of the heaters is stable. The second time point is set after the temperature transition profile reaches the process temperature.

## Claims

### Claim 1

A substrate processing apparatus comprising:
a plurality of heating modules each including a table on which a substrate is placed to be heated, the substrate having a plurality of heated zones, the table having a plurality of heaters each assigned to heat respective ones of the heated zones, wherein heat generation of the heaters can be controlled independently from each other; and
a control unit that outputs control signals that controls the heaters such that integrated quantities of heat of the respective heated zones given by the corresponding heaters from a first time point to a second time point are substantially identical to each other in each of the heating modules, and are substantially identical to each other among the heating modules, the control unit including a target value outputting unit transmitting a signal for a target value of a temperature of each of the respective ones of the heated zones and at least one offset value outputting unit transmitting a signal for an offset value of the temperature with respect to each of the target values;
wherein the first time point is a time point at which a temperature transition profile of the substrate is rising toward a process temperature after the substrate is placed on the table under a condition where heat generation of the heaters are stable, and the second time point is a time point after the temperature transition profile reaches the process temperature,
wherein the offset value is a difference between one of the integrated quantities of heat in the respective heated zones from the first time point to the second time point and a reference value of the one of the integrated quantities of heat from the first time point to the second time point.

### Claim 2 (depends on 1)

The substrate processing apparatus according to claim 1 wherein a time period from the first time point to the second time point is divided into a plurality of time sections, and wherein, in each of the time sections, the integrated quantities of heat of the respective heated zones given by the corresponding heaters are substantially identical to each other in each of the heating modules, and are substantially identical to each other among the heating modules.

### Claim 3 (depends on 1)

The substrate processing apparatus according to claim 1 wherein, in each of the plurality of heating modules, the integrated quantities of heat of the heated zones are controlled such that each of the integrated quantities of heat has a deviation from a reference integrated quantity of heat not greater than 0.5 percent of the reference integrated quantity of heat.

### Claim 4 (depends on 1)

The substrate processing apparatus according to claim 1 further comprising temperature detecting units that detect temperatures of respective ones of the heated zones of the substrates,
wherein the control unit further includes:
adjusting units, each adjusting unit being assigned to respective ones of the heaters, each of the adjusting units is-being configured to output a control signal that controls electric power supplied to the corresponding heater based on a deviation of a detected temperature of the corresponding temperature detecting unit from a set temperature;
adding units, each adding unit being assigned to respective ones of the heaters, each of the adding units configured to add the offset value to the target temperature, the target temperature being the process temperature, thereby to obtain the set temperature; and
a memory unit the stores the offset values, each offset value being assigned to respective ones of the heaters in respective ones of time sections.