# US 10,504,741 B2 · Semiconductor manufacturing method and plasma processing apparatus

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 10,504,741 B2
- Document ID: US10504741B2
- Status: Granted
- Kind: B2
- Application number: 15/903,466
- Filed: 2018-02-23
- Published: 2018-08-30
- Granted: 2019-12-10
- Earliest claimed: 2017-02-28
- Assignees: Tokyo Electron Limited
- Applicants: Tokyo Electron Limited
- Inventors: Michiko Nakaya; Masanobu Honda; Toru Hisamatsu; Masahiro Tabata
- Web page: https://patentgrep.com/patent/US10504741B2

## CPC

- H10P 50/283: {by chemical means}
- H10P 50/269: {pre- or post-treatments, e.g. anti-corrosion processes}
- H10P 70/234: {the processing being the formation of vias or contact holes}
- H10W 20/081: {by forming openings in the dielectric parts}
- H10P 70/30: {Cleaning after the substrates have been singulated}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor manufacturing method includes a first process of etching an insulating film over a conductive layer of an object into a pattern of a mask, and exposing the conductive layer to a recessed portion formed in the insulating film, and a second process of forming an organic film in the recessed portion of the insulating film to which the conductive layer is exposed, the second process including, maintaining a chamber at a predetermined pressure, cooling a stage to −20° C. or less, and placing the object on the stage, supplying a gas including a gas containing a low vapor pressure material to the chamber, and generating plasma from the gas including the gas containing the low vapor pressure material, and causing precursors generated from the low vapor pressure material and included in the plasma to be deposited in the recessed portion such that the organic film is formed.

## Claims

### Claim 1

A plasma processing apparatus comprising:
a stage on which an object to be processed is placed;
a gas supply unit configured to supply a gas; and
a control unit,
wherein the control unit is configured to perform control for
etching an insulating film over a conductive layer of an object to be processed into a pattern of a mask, and exposing the conductive layer to a recessed portion formed in the insulating film; and
forming an organic film in the recessed portion of the insulating film to which the conductive layer is exposed,
in the forming of the organic film,
maintaining an inside of a chamber at a predetermined pressure, cooling a stage to a temperature of −20° C. or less, and placing the object to be processed on the stage,
supplying a gas including a gas containing a low vapor pressure material to the inside of the chamber, and
generating plasma from the gas including the gas containing the low vapor pressure material, and causing precursors generated from the low vapor pressure material and included in the plasma to be deposited on the conductive layer such that the organic film is formed.

### Claim 2

A semiconductor manufacturing method comprising:
a first process of etching an insulating film over a conductive layer of an object to be processed into a pattern of a mask, and exposing the conductive layer to a recessed portion formed in the insulating film; and
a second process of forming an organic film in the recessed portion of the insulating film to which the conductive layer is exposed,
the second process including,
maintaining an inside of a chamber at a predetermined pressure, cooling a stage to a temperature of −20° C. or less, and placing the object to be processed on the stage,
supplying a gas including a gas containing a low vapor pressure material to the inside of the chamber, and
generating plasma from the gas including the gas containing the low vapor pressure material, and causing precursors generated from the low vapor pressure material and included in the plasma to be deposited on the conductive layer such that the organic film is formed.

### Claim 3 (depends on 2)

The semiconductor manufacturing method according to claim 2, wherein the second process of forming the organic film causes the precursors to be deposited in the recessed portion of the insulating portion from a bottom of the recessed portion of the insulating film in a bottom-up approach.

### Claim 4 (depends on 2)

The semiconductor manufacturing method according to claim 2, wherein the organic film formed in the second process is flowable and has a thickness of at least 4 nm.

### Claim 5 (depends on 2)

The semiconductor manufacturing method according to claim 2, wherein the precursors are caused to be deposited on an entire surface of the conductive layer such that the organic film is formed.

### Claim 6 (depends on 2)

The semiconductor manufacturing method according to claim 2,
wherein the object to be processed is transferred to a cleaning apparatus in an atmospheric pressure environment after the second process is performed, and
the cleaning apparatus removes the organic film.

### Claim 7 (depends on 6)

The semiconductor manufacturing method according to claim 6, wherein the gas containing the low vapor pressure material is made of a material that is removable by the cleaning apparatus.

### Claim 8 (depends on 7)

The semiconductor manufacturing method according to claim 7, wherein the gas containing the low vapor pressure material is a carbon-containing gas.

### Claim 9 (depends on 8)

The semiconductor manufacturing method according to claim 8, wherein the gas containing the low vapor pressure material is formed of C4F8, C4F6, or isopropyl alcohol (IPA).