# US 10,504,732 B2 · Impurity diffusion agent composition and method for manufacturing semiconductor substrate

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- Number: US 10,504,732 B2
- Document ID: US10504732B2
- Status: Granted
- Kind: B2
- Application number: 15/845,015
- Filed: 2017-12-18
- Published: 2018-06-28
- Granted: 2019-12-10
- Earliest claimed: 2016-12-22
- Assignees: Tokyo Ohka Kogyo Co., Ltd.
- Applicants: Tokyo Ohka Kogyo Co., Ltd.
- Inventors: Yoshihiro Sawada; Yu Takahashi
- Web page: https://patentgrep.com/patent/US10504732B2

## CPC

- H10P 32/19: {Diffusion sources}
- C07F 5/00: Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F 5/022: {without C-boron linkages}
- H10P 32/14: within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
- H10P 70/15: {by wet cleaning only (H10P70/52 takes precedence)}
- H10P 32/1404: {using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase}
- H10P 32/171: {being group IV material}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C07F: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM (metal-containing porphyrins C07D487/22)

## Abstract

A diffusion agent composition that can be evenly applied onto the whole area of an inner surface of the fine voids, whereby boron can be well and uniformly diffused into the semiconductor substrate even by heating at a low temperature, and a method for manufacturing a semiconductor substrate using the diffusion agent composition. In a diffusion agent composition including an impurity diffusion component, the impurity diffusion component, which can be applied onto a surface of a semiconductor substrate to form a diffusion layer, and which is a boron compound including a nitrogen atom, is used.

## Claims

### Claim 1

A diffusion agent composition used for diffusion of impurities into a semiconductor substrate, comprising an impurity diffusion component (A) which can be applied onto a surface of a semiconductor substrate to form a diffusion layer, and
an organic solvent (S),
wherein said impurity diffusion component (A) is a boron compound including a nitrogen atom, and
wherein the boron compound is a compound represented by the following formula (a1) or the following formula (a2):
wherein R1, R2, R3, and R4 each independently represents a hydrogen atom, a hydroxyl group, an organic group which does not contain a nitrogen atom, or a nitrogen atom-containing group; at least one of R1, R2, R3, and R4 is a nitrogen atom-containing group; and R1 and R2, R2 and R4, R3 and R4, as well as R1 and R3, may each independently be bonded to each other to form a ring, and in the formula (a2), R5, R6, and R7 each independently represents a hydrogen atom, a hydroxyl group, an organic group which does not contain a nitrogen atom, or a nitrogen atom-containing group; at least one of R5, R6, and R7 is a nitrogen atom-containing group; and two of R5, R6, and R7 may be bonded to each other to form a ring.

### Claim 2 (depends on 1)

A method for manufacturing a semiconductor substrate, the method comprising:
applying the diffusion agent composition according to claim 1 onto a semiconductor substrate to form a coating film; and
diffusing the impurity diffusion component (A) in the diffusion agent composition into the semiconductor substrate,
wherein the coating film is heated at a temperature of 900° C. or more and 1200° C. or less to diffuse the impurity diffusion component (A) into the semiconductor substrate.

### Claim 3 (depends on 2)

The method for manufacturing a semiconductor substrate according to claim 2, wherein the coating film has a film thickness of not more than 30 nm.

### Claim 4 (depends on 3)

The method for manufacturing a semiconductor substrate according to claim 3, wherein the coating film has a thickness of 0.2 to 10 nm.

### Claim 5 (depends on 2)

The method for manufacturing a semiconductor substrate according to claim 2, wherein the semiconductor substrate has a three-dimensional structure having convexes and concaves on a surface onto which the diffusion agent composition is applied.

### Claim 6 (depends on 2)

The method for manufacturing a semiconductor substrate according to claim 2, further comprising rinsing the coating film with an organic solvent.

### Claim 7 (depends on 1)

The diffusion agent composition according to claim 1, wherein the boron compound is a compound selected from the group consisting of compounds represented by the following formulae (a1-1), (a1-2), (a2-1), (a2-2), (a2-3), (a2-4), and (a2-5):
wherein in the formula (a1-1), R8 to R15 each independently represents a hydrogen atom, an aliphatic hydrocarbon group having 1 to 10 carbon atoms, an aromatic hydrocarbon group having 6 to 10 carbon atoms, an aralkyl group having 7 to 12 carbon atoms, an aliphatic acyl group having 2 to 10 carbon atoms, or an aromatic acyl group having 7 to 11 carbon atoms; R8 and R9, R10 and R11, R12 and R13, as well as R14 and R15, may each independently be bonded to each other to form a ring;
wherein in the formula (a1-2), R16 and R17 each represent a divalent organic group;
wherein in the formula (a2-1), R29 represents a nitrogen-containing heterocyclic group or a cyclic group which does not contain a nitrogen atom substituted with a nitrogen-containing group; R30 and R31 each independently represent a hydrogen atom, an aliphatic hydrocarbon group having 1 to 10 carbon atoms, an aromatic hydrocarbon group having 6 to 10 carbon atoms, an aralkyl group having 7 to 12 carbon atoms, an aliphatic acyl group having 2 to 10 carbon atoms, or an aromatic acyl group having 7 to 11 carbon atoms; R30 and R31 may be bonded to each other to form a ring;
wherein in the formula (a2-2), R34 and R35 each independently represent a hydrogen atom, a hydroxyl group, an aliphatic hydrocarbon group having 1 to 10 carbon atoms, an aromatic hydrocarbon group having 6 to 10 carbon atoms, an aralkyl group having 7 to 12 carbon atoms, an aliphatic acyl group having 2 to 10 carbon atoms, or an aromatic acyl group having 7 to 11 carbon atoms; and R36 and R37 each independently represent a hydrogen atom, an aliphatic hydrocarbon group having 1 to 10 carbon atoms, an aromatic hydrocarbon group having 6 to 10 carbon atoms, an aralkyl group having 7 to 12 carbon atoms, an aliphatic acyl group having 2 to 10 carbon atoms, or an aromatic acyl group having 7 to 11 carbon atoms; R34 and R35 may be bonded to each other to form a ring; R34 and R36 may be bonded to each other to form a ring; R35 and R37 may be bonded to each other to form a ring; and R36 and R37 may be bonded to each other to form a ring;
wherein in the formula (a2-3), R38 represents a nitrogen-containing heterocyclic group or a cyclic group which does not contain a nitrogen atom substituted with a nitrogen-containing group; R39 and R40 each independently represent a hydrogen atom, an aliphatic hydrocarbon group having 1 to 10 carbon atoms, an aromatic hydrocarbon group having 6 to 10 carbon atoms, an aralkyl group having 7 to 12 carbon atoms, an aliphatic acyl group having 2 to 10 carbon atoms, or an aromatic acyl group having 7 to 11 carbon atoms; R39 and R40 may be bonded to each other to form a ring;
wherein the formula (a2-4), R41 and R42 each independently represent a hydrogen atom, an aliphatic hydrocarbon group having 1 to 10 carbon atoms, an aromatic hydrocarbon group having 6 to 10 carbon atoms, an aralkyl group having 7 to 12 carbon atoms, an aliphatic acyl group having 2 to 10 carbon atoms, or an aromatic acyl group having 7 to 11 carbon atoms R43 represents an alkylene group having 1 to 10 carbon atoms, —BR45—, —BR45—BR45—, —BR45—NR46—, —NR46—NR46—, —BR45—NR46—BR45—, or —BR45—NR46—BR45—NR46—BR45—; R46 each independently represent a hydrogen atom, an aliphatic hydrocarbon group having 1 to 10 carbon atoms, an aromatic hydrocarbon group having 6 to 10 carbon atoms, an aralkyl group having 7 to 12 carbon atoms, an aliphatic acyl group having 2 to 10 carbon atoms, or an aromatic acyl group having 7 to 11 carbon atoms; R44 and R45 each independently represent a hydrogen atom, an aliphatic hydrocarbon group having 1 to 10 carbon atoms, an aromatic hydrocarbon group having 6 to 10 carbon atoms, an aralkyl group having 7 to 12 carbon atoms, an aliphatic acyl group having 2 to 10 carbon atoms, and an aromatic acyl group having 7 to 11 carbon atoms, a nitrogen-containing heterocyclic group, or a cyclic group which does not contain a nitrogen atom substituted with a nitrogen-containing group; and
wherein in the formula (a2-5), R46 to R51 each independently represent a hydrogen atom, an aliphatic hydrocarbon group having 1 to 10 carbon atoms, an aromatic hydrocarbon group having 6 to 10 carbon atoms, an aralkyl group having 7 to 12 carbon atoms, an aliphatic acyl group having 2 to 10 carbon atoms, or an aromatic acyl group having 7 to 11 carbon atoms; R46 and R47, R48 and R49, and R50 and R51 each independently may be bonded to each other to form a ring.

### Claim 8 (depends on 1)

The diffusion agent composition according to claim 1, wherein the boron compound is a compound selected from the group consisting of compounds A1 and A5 to A13, represented by the following formulae: