# US 10,504,730 B2 · Device and method for bonding of substates > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,504,730 B2 - Document ID: US10504730B2 - Status: Granted - Kind: B2 - Application number: 16/123,494 - Filed: 2018-09-06 - Published: 2019-01-17 - Granted: 2019-12-10 - Earliest claimed: 2018-09-06 - Assignees: EV Group E. Thallner GmbH - Applicants: EV Group E. Thallner GmbH - Inventors: Florian Kurz; Thomas Wagenleitner; Thomas Plach; Jurgen Markus Suss - Web page: https://patentgrep.com/patent/US10504730B2 ## CPC - H10P 10/128: {by direct semiconductor to semiconductor bonding} - H10P 72/0428: {Apparatus for mechanical treatment or grinding or cutting} - H10P 74/203: {Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects} - H10P 74/23: {characterised by multiple measurements, corrections, marking or sorting processes} - H10P 90/1914: {using bonding} - H10W 90/00: Package configurations - H10P 72/0604: {Process monitoring, e.g. flow or thickness monitoring} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A method for bonding a first substrate with a second substrate at respective contact faces of the substrates with the following steps: holding the first substrate to a first sample holder surface of a first sample holder with a holding force FH1 and holding the second substrate to a second sample holder surface of a second sample holder with a holding force FH2; contacting the contact faces at a bond initiation point and heating at least the second sample holder surface to a heating temperature TH; bonding of the first substrate with the second substrate along a bonding wave running from the bond initiation point to the side edges of the substrates, wherein the heating temperature TH is reduced at the second sample holder surface during the bonding. ## Claims ### Claim 1 A device for bonding a first substrate with a second substrate, comprising: a measuring means configured to detect a bonding wave to enable control of the bonding wave “during contact between the first substrate and second substrate”. ### Claim 2 (depends on 1) The device according to claim 1, wherein the measuring means is further configured to detect a back side of the first substrate. ### Claim 3 (depends on 1) The device according to claim 1, wherein the measuring means is further configured to measure the bonding wave. ### Claim 4 (depends on 1) The device according to claim 1, further comprising: a first substrate holder configured to hold the first substrate with a first holding force FH1; and a second substrate holder configured to hold the second substrate with a second holding force FH2, wherein at least one of the first and second holding forces FH1 and FH2 is reduced to 0 to control the bonding wave. ### Claim 5 (depends on 1) The device according to claim 1, wherein the measuring means is further configured to detect a state of the bonding wave and an advance of the bonding wave. ### Claim 6 (depends on 1) The device according to claim 1, wherein the measuring means is further configured to detect at least one of a position of the bonding wave and a size of a bonded area. ### Claim 7 (depends on 1) The device according to claim 1, wherein the measuring means comprises at least one of optics and cameras. ### Claim 8 (depends on 1) The device according to claim 1, wherein the measuring means comprises conductivity measurement means. ### Claim 9 (depends on 4) The device according to claim 4, wherein the first and second substrate holders respectively fix the first and second substrates thereto by vacuums respectively applied from the first and second substrate holders, wherein the vacuums respectively applied from the first and second substrate holders impose first and second holding forces FH1 and FH2 to respectively fix the first and second substrates to the first and second substrate holders, and wherein the vacuums are reduced to reduce the first and second holding forces FH1 and FH2 and respectively control releasing of the first and second substrates from the first and second substrate holders. ### Claim 10 (depends on 1) The device according to claim 1, wherein the bonding wave is detected over a period that is greater than 1 second. ### Claim 11 (depends on 1) The device according to claim 1, wherein the measuring means is further configured to detect the bonding wave via a radial position of the bonding wave corresponding to at least 0.1 times respective diameters of the first and second substrates. ### Claim 12 (depends on 1) The device according to claim 1, wherein the measuring means is further configured to detect the bonding wave via a percentage amount of a bonded surface of the first and second substrates with respect to a non-bonded surface of the first and second substrates. ### Claim 13 (depends on 1) The device according to claim 1, wherein the bonding wave is controlled in view of a defined set of values obtained by the measuring means. ### Claim 14 (depends on 1) The device according to claim 1, wherein the bonding wave is controlled by targeted removal of a fixing means by continuous removal of a vacuum. ### Claim 15 A device for bonding a first substrate with a second substrate at respective contact faces of the substrates, the device comprising: a first sample holder configured to hold the first substrate to a surface of the first sample holder with a holding force FH1 applied by a first vacuum of the first sample holder; a second sample holder configured to hold the second substrate to a surface of the second sample holder with a holding force FH2 applied by a second vacuum of the second sample holder; and a measuring means configured to detect a bonding wave between the first substrate and the second substrate during contact therewith and reduce the first and second vacuums to control the bonding wave between the first substrate and the second substrate. ### Claim 16 A method for bonding a first substrate with a second substrate, comprising: measuring a bonding wave between the first substrate and the second substrate during contact therewith; and reducing first and second vacuums respectively included in first and second sample holders to respectively reduce a hold of the first and second substrates by the first and second sample holder and control the bonding wave. ### Claim 17 (depends on 16) The method according to claim 16, wherein the measuring of the bonding wave further comprises detecting a back side of the first substrate. ### Claim 18 (depends on 16) The method according to claim 16, wherein the first sample holder holds the first substrate with a first holding force FH1, wherein the second sample holder holds the second substrate with a second holding force FH2, and wherein at least one of the first and second holding forces FH1 and FH2 is reduced to 0 to control the bonding wave. ### Claim 19 (depends on 16) The method according to claim 16, wherein the measuring of the bonding wave further comprises detecting at least one of a state of the bonding wave and an advance of the bonding wave. ### Claim 20 (depends on 16) The method according to claim 16, wherein the measuring of the bonding wave further comprises detecting at least one of a position of the bonding wave and a size of a bonded area.