# US 10,504,725 B2 · Material selective regrowth structure and method

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- Number: US 10,504,725 B2
- Document ID: US10504725B2
- Status: Granted
- Kind: B2
- Application number: 15/298,005
- Filed: 2016-10-19
- Published: 2017-02-09
- Granted: 2019-12-10
- Earliest claimed: 2014-04-25
- Assignees: Texas State University—San Marcos
- Applicants: The Texas State University-San Marcos
- Inventors: Edwin L. Piner
- Web page: https://patentgrep.com/patent/US10504725B2

## CPC

- H10P 14/276: {Lateral overgrowth}
- H10D 62/118: {Nanostructure semiconductor bodies}
- H10P 14/271: {characterised by the preparation of substrate for selective deposition}
- H10P 14/2908: {Nitrides}
- H10P 14/2925: {Surface structures}
- H10P 14/3216: {Nitrides}
- H10P 14/3416: {Nitrides}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

The disclosure relates to a method for creating a nanoscale structure. The method includes forming a window in a semiconductor structure, the semiconductor structure comprising a substrate, a first semiconductor layer, and a mask layer; depositing a second semiconductor layer within the window such that a gap remains between the second semiconductor and a portion of the window; and regrowing the first semiconductor layer such that the first semiconductor layer fills the gap.

## Claims

### Claim 1

A nanoscale structure comprising:
a substrate;
a first semiconductor layer on top of the substrate; and
a second semiconductor layer deposited within a window formed in the substrate and the first semiconductor layer such that a gap exists between the second semiconductor and a portion of the first semiconductor layer/and or the substrate, wherein the gap is filled by a regrown first semiconductor layer.

### Claim 2 (depends on 1)

The structure of claim 1, wherein the regrown first semiconductor layer overgrows the second semiconductor layer.

### Claim 3 (depends on 1)

The structure of claim 1, wherein the first semiconductor layer is covered by the regrown first semiconductor layer.

### Claim 4 (depends on 1)

The structure of claim 1, wherein the second semiconductor layer comprises a sidewall that is non-vertical.

### Claim 5 (depends on 4)

The structure of claim 4, wherein the gap is concave.

### Claim 6 (depends on 4)

The structure of claim 4, wherein the gap is convex.

### Claim 7 (depends on 3)

The structure of claim 3, further comprising a third semiconductor layer on the regrown first semiconductor layer.

### Claim 8 (depends on 7)

The structure of claim 7, wherein the third semiconductor layer comprises a different material than the second semiconductor layer.

### Claim 9 (depends on 7)

The structure of claim 7, wherein the third semiconductor layer is a different size than the second semiconductor layer.

### Claim 10 (depends on 7)

The structure of claim 7, wherein the third semiconductor layer is a different shape than the second semiconductor layer.

### Claim 11 (depends on 1)

The structure of claim 1, wherein the first semiconductor layer comprises a different material than the regrown first semiconductor layer.