# US 10,504,721 B2 · Staggered-type tunneling field effect transistor

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- Number: US 10,504,721 B2
- Document ID: US10504721B2
- Status: Granted
- Kind: B2
- Application number: 14/700,187
- Filed: 2015-04-30
- Published: 2016-11-03
- Granted: 2019-12-10
- Earliest claimed: 2015-04-30
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.; National Chiao Tung University
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.; National Chiao Tung University
- Inventors: Steve S. Chung; E. Ray Hsieh; Kuan-Yu Chang
- Web page: https://patentgrep.com/patent/US10504721B2

## CPC

- H10P 14/2924: {Structures}
- H10D 12/211: {Gated diodes}
- H10D 30/6211: {having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates}
- H10D 48/383: {Quantum effect devices, e.g. of devices using quantum reflection, diffraction or interference effects}
- H10D 62/126: {Top-view geometrical layouts of the regions or the junctions}
- H10D 10/231: {Tunnel BJTs}
- H10D 62/822: comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
- H10D 64/66: Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling area. The source or drain region may be a doped region in a semi-conductive substrate. The other source or drain region may be formed by epitaxial deposition over the doped region. The gate is formed over the epitaxial region where the doped and epitaxial regions overlap. The doped region may be formed in a fin structure with the epitaxial region and gate being formed on the top and sides of the fin.

## Claims

### Claim 1

A method for forming a tunneling field effect transistor comprising:
forming a doped region formed in a semi-conductive substrate;
depositing an epitaxial layer comprising an overlapping region overlapping the doped region, the overlapping region extending over the doped region in a direction perpendicular with a major surface of the semi-conductive substrate, the overlapping region having a first edge directly over an edge of the doped region in the direction perpendicular with the major surface of the semi-conductive substrate, the overlapping region having a second edge opposite the first edge at an edge of the epitaxial layer, wherein a topmost surface of the overlapping region of the epitaxial layer is above a topmost surface of the doped region;
forming a dielectric layer over the doped region, wherein the dielectric layer contacts the doped region and extends above the epitaxial layer; and
forming a gate adjacent to the overlapping region, wherein the gate covers the topmost surface of the overlapping region in the direction perpendicular with the major surface of the semi-conductive substrate, and wherein the gate covers a side surface of the overlapping region in a direction parallel with the major surface of the semi-conductive substrate;
wherein the doped region serves as a source or drain and the epitaxial layer serves as the other of the source or drain of the tunneling field effect transistor.

### Claim 2 (depends on 1)

The method of claim 1 wherein the doped region is formed by implantation of ions into the semi-conductive substrate.

### Claim 3 (depends on 1)

The method of claim 1 wherein the dielectric layer is formed over the doped region before forming the gate.

### Claim 4 (depends on 1)

The method of claim 1, wherein the gate comprises a gate insulator and a gate electrode, and wherein the gate insulator comprises a high K dielectric material.

### Claim 5 (depends on 1)

The method of claim 1 wherein a doping profile of the doped region and a composition of the epitaxial layer are controlled to provide a heterojunction between the doped region and the epitaxial layer.

### Claim 6 (depends on 1)

The method of claim 1 wherein the semi-conductive substrate comprises crystalline silicon and the epitaxial region comprises silicon-germanium.

### Claim 7 (depends on 1)

The method of claim 1 wherein the doped region is laterally spaced from a first end of the gate and the epitaxial layer is laterally spaced from a second end of the gate.

### Claim 8

A method for forming a tunneling field effect transistor comprising:
forming a doped region in a substrate;
forming a dielectric layer on the substrate;
epitaxially growing an epitaxial region physically contacting a semiconductor material of the substrate, the epitaxial region partially overlapping the doped region, wherein the dielectric layer masks a portion of the doped region while epitaxially growing the epitaxial region over the substrate;
forming a gate structure laterally above the doped region and the epitaxial region, wherein the epitaxial region is interposed between a first portion of the gate structure and the doped region, and wherein the gate structure extends over a side surface of the epitaxial region and below an uppermost surface of the epitaxial layer; and
forming a contact extending through the dielectric layer and electrically connected to the doped region.

### Claim 9 (depends on 8)

The method of claim 8, wherein the gate structure extends along an upper surface and a sidewall of the epitaxial region.

### Claim 10 (depends on 8)

The method of claim 8, wherein the gate structure overlaps a lateral edge of the doped region.

### Claim 11

A method for forming a tunneling field effect transistor comprising:
forming a first mask over a substrate;
forming a doped region in the substrate using the first mask as a mask;
removing the first mask;
forming a first dielectric layer over the doped region, a first portion of the doped region being exposed through the first dielectric layer;
after forming the first dielectric layer, forming an epitaxial region using the first dielectric layer as a mask, an overlapping portion of the epitaxial region overlapping the first portion of the doped region, wherein the epitaxial region contacts the doped region, and wherein a top surface of the first dielectric layer is disposed above a top surface of the epitaxial region and a top surface of the doped region;
forming a gate structure over the overlapping portion; and
forming a second dielectric layer adjacent the gate structure, the gate structure being interposed between the first dielectric layer and the second dielectric layer.

### Claim 12 (depends on 11)

The method of claim 11, wherein the first dielectric layer extends below an upper surface of the epitaxial region.

### Claim 13 (depends on 11)

The method of claim 11, wherein the gate structure extends along a sidewall of the epitaxial region.

### Claim 14 (depends on 1)

The method of claim 1, wherein a bottommost surface of the epitaxial layer physically contacts the topmost surface of the doped region.