# US 10,504,720 B2 · Etching using chamber with top plate formed of non-oxygen containing material

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- Number: US 10,504,720 B2
- Document ID: US10504720B2
- Status: Granted
- Kind: B2
- Application number: 15/725,744
- Filed: 2017-10-05
- Published: 2018-05-31
- Granted: 2019-12-10
- Earliest claimed: 2016-11-29
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company, Ltd.
- Inventors: En-Ping Lin; Yi-Wei Chiu; Tzu-Chan Weng; Wen-Zhong Ho
- Web page: https://patentgrep.com/patent/US10504720B2

## CPC

- H10P 14/6923: {the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG}
- C23C 16/401: {containing silicon}
- H10P 14/2908: {Nitrides}
- H10P 14/6334: {using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329)}
- H10P 14/662: {Laminate layers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers H10P14/6508, H10P14/6548)}
- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10P 50/00: Etching of wafers, substrates or parts of devices
- H10P 50/283: {by chemical means}
- H10P 50/692: {characterised by their composition, e.g. multilayer masks or materials}
- H10P 72/0462: {characterised by the construction of the processing chambers, e.g. modular processing chambers}
- H10P 72/7616: {characterised by a coating, a hardness or a material}
- H10P 90/12: {Preparing bulk and homogeneous wafers}
- H10P 90/1908: {using silicon implanted buried insulating layers, e.g. oxide layers [SIMOX]}
- H10W 10/014: {using trench refilling with dielectric materials, e.g. shallow trench isolations}
- H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method includes etching a first oxide layer in a wafer. The etching is performed in an etcher having a top plate overlapping the wafer, and the top plate is formed of a non-oxygen-containing material. The method further includes etching a nitride layer underlying the first oxide layer in the etcher until a top surface of a second oxide layer underlying the nitride layer is exposed. The wafer is then removed from the etcher, with the top surface of the second oxide layer exposed when the wafer is removed.

## Claims

### Claim 1

A method comprising:
etching a first nitride layer in a wafer to form a patterned first nitride layer, wherein a first oxide layer underlying the first nitride layer is exposed;
etching the first oxide layer using the patterned first nitride layer as an etching mask, wherein the etching is performed in a first etcher comprising a first top plate overlapping the wafer, and the first top plate is formed of a non-oxygen-containing material;
etching a second nitride layer underlying the first oxide layer in the first etcher until a top surface of a second oxide layer underlying the second nitride layer is exposed, wherein patterns of the patterned first nitride layer is transferred into the second nitride layer;
removing the wafer from the first etcher, with the top surface of the second oxide layer exposed when the wafer is removed;
removing the first top plate out of the first etcher;
removing a surface oxide layer on the first top plate to expose the non-oxygen-containing material; and
re-installing the first top plate into the first etcher.

### Claim 2 (depends on 1)

The method of claim 1, wherein the first top plate is formed of silicon, and the first top plate is exposed to etching gases when the first oxide layer is etched.

### Claim 3 (depends on 1)

The method of claim 1, wherein the first top plate is formed of silicon carbide, and the first top plate is exposed to etching gases when the first oxide layer is etched.

### Claim 4 (depends on 1)

The method of claim 1 further comprising etching the second oxide layer and a semiconductor substrate underlying the second oxide layer in a second etcher, wherein the second etcher has a second top plate formed of an oxygen-containing material.

### Claim 5 (depends on 4)

The method of claim 4, wherein the first etcher and the second etcher have identical designs except materials directly over the wafer are different between the first etcher and the second etcher.

### Claim 6 (depends on 4)

The method of claim 4, wherein the second top plate is formed of quartz.

### Claim 7 (depends on 1)

The method of claim 1, wherein when the etching is performed in the first etcher, an outer cell and a protection ring in the first etcher are also formed of non-oxygen-containing materials, and wherein the outer cell and the protection ring form rings encircling the first top plate.

### Claim 8 (depends on 1)

The method of claim 1, wherein in a top view of the wafer, the first top plate extends beyond edges of the wafer.

### Claim 9

A method comprising:
placing a wafer into an etching chamber, wherein the etching chamber comprises a top plate overlapping the wafer, and the top plate comprises:
an inner portion formed of an oxygen-containing material; and
an outer portion formed of a non-oxide material, wherein the outer portion is coated on the inner portion;
etching a oxide layer of the wafer in the etching chamber to expose a first nitride layer underlying the oxide layer;
etching the first nitride layer in the etching chamber to expose a second oxide layer, wherein in the etching of the oxide layer and the first nitride layer, the top plate is exposed to plasma generated from respective etchant gases; and
etching an additional oxide layer generated on the top plate, wherein after the etching, the additional oxide layer is removed, and the outer portion of the top plate is left unremoved.

### Claim 10 (depends on 9)

The method of claim 9 further comprising etching a second nitride layer in the etching chamber to expose the oxide layer.

### Claim 11 (depends on 9)

The method of claim 9, wherein the inner portion and the outer portion both comprise silicon.

### Claim 12 (depends on 9)

The method of claim 9, wherein the inner portion comprises quartz, and the outer portion comprises silicon carbide.

### Claim 13 (depends on 9)

The method of claim 9, wherein the outer portion encloses the inner portion.

### Claim 14 (depends on 9)

The method of claim 9 further comprising;
after the wafer is removed out of the etching chamber, taking the top plate out of the etching chamber; and
re-installing the top plate back into the etching chamber after the additional oxide layer is removed from the top plate.

### Claim 15

A method comprising:
placing a wafer into an etching chamber of a first etcher, wherein a first top plate, a first outer cell, and a first protection ring of the first etcher are formed of a non-oxygen-containing material;
etching a first silicon oxide layer in the wafer using an etchant gas, wherein in the etching the first silicon oxide layer, oxygen (O2) is conducted as a part of a corresponding etchant gas;
etching a nitride layer underlying the first silicon oxide layer in the etching chamber of the first etcher until a top surface of a second oxide layer underlying the nitride layer is exposed;
etching the second oxide layer in a second etcher, wherein a second top plate, a second outer cell, and a second protection ring in the second etcher are formed of an oxygen-containing material;
taking the first top plate, the first outer cell, and the first protection ring out of the etching chamber;
removing silicon oxide layers generated on surfaces of the first top plate, the first outer cell, and the first protection ring to expose silicon; and
re-installing the first top plate, the first outer cell, and the first protection ring into the etching chamber.

### Claim 16 (depends on 15)

The method of claim 15, wherein the first top plate, the first outer cell, and the first protection ring are formed of silicon with silicon percentages higher than about 95 percent.

### Claim 17 (depends on 15)

The method of claim 15, wherein the first top plate, the first outer cell, and the first protection ring in combination overlap an entirety of the wafer.

### Claim 18 (depends on 15)

The method of claim 15, wherein the etchant gas comprises C4F6.

### Claim 19 (depends on 9)

The method of claim 9, wherein the outer portion forms a conformal coating on all surfaces of the inner portion.

### Claim 20 (depends on 1)

The method of claim 1, wherein the first top plate is formed of silicon.