# US 10,504,718 B2 · Substrate processing apparatus, substrate processing method, and storage medium

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- Number: US 10,504,718 B2
- Document ID: US10504718B2
- Status: Granted
- Kind: B2
- Application number: 15/814,592
- Filed: 2017-11-16
- Published: 2018-05-17
- Granted: 2019-12-10
- Earliest claimed: 2016-11-17
- Assignees: Tokyo Electron Limited
- Applicants: Tokyo Electron Limited
- Inventors: Hiroki Ohno; Keisuke Egashira; Gentaro Goshi; Yosuke Kawabuchi; Shotaro Kitayama; Hiroshi Marumoto; Takuro Masuzumi; Kento Tsukano; Hiromi Kiyose
- Web page: https://patentgrep.com/patent/US10504718B2

## CPC

- H10P 70/80: {Cleaning only by supercritical fluids}
- H10P 70/20: {Cleaning during device manufacture}
- H10P 72/0408: {for drying}
- H10P 72/0414: {using mainly spraying means, e.g. nozzles}
- H10P 72/0462: {characterised by the construction of the processing chambers, e.g. modular processing chambers}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

During at least part of a time period for a pressure increasing step of increasing a pressure inside a processing container from a pressure lower than a critical pressure of a processing fluid to a pressure higher than the critical pressure, pressure increasing is performed by supplying the processing fluid into the processing container from a fluid supply source while discharging the processing fluid from the processing container at a controlled discharge flow rate. Particles attached to the surfaces of members inside the processing container travel upward by the supply of the processing fluid into the processing container from the fluid supply source. The particles are discharged along with the processing fluid from the processing container.

## Claims

### Claim 1

A substrate processing apparatus for processing a substrate using a processing fluid in a supercritical state, the apparatus comprising:
a processing container that accommodates the substrate and has a first end and a second end opposite the first end;
a supply line configured to feed the processing fluid in the supercritical state from a fluid supply source to the processing container through at least one nozzle;
a discharge line that discharges the processing fluid from the processing container through a discharge port positioned at the first end of the processing container;
a discharge flow rate regulator that regulates a flow rate of the processing fluid discharged from the processing container to the discharge line; and
a controller that controls an operation of the discharge flow rate regulator,
wherein during at least part of a time period for increasing a pressure inside the processing container from a pressure lower than a critical pressure of the processing fluid to a pressure higher than the critical pressure, the controller controls the discharge flow rate regulator such that the increasing is performed by supplying the processing fluid into the processing container from the fluid supply source through the supply line while simultaneously discharging the processing fluid from the processing container to the discharge line at a discharge flow rate.

### Claim 2 (depends on 1)

The substrate processing apparatus of claim 1, wherein during an entire time period for the increasing, the controller controls the discharge flow rate regulator such that the increasing is performed by supplying the processing fluid into the processing container from the fluid supply source through the supply line while discharging the processing fluid from the processing container to the discharge line at the discharge flow rate.

### Claim 3 (depends on 1)

The substrate processing apparatus of claim 1, wherein the controller changes the discharge flow rate to be different in a first time period of the increasing than in a second time period for the increasing after the first time period.

### Claim 4 (depends on 3)

The substrate processing apparatus of claim 3, wherein the discharge flow rate in the first time period is larger than the discharge flow rate in the second time period.

### Claim 5

A substrate processing method for processing a substrate using a processing fluid in a supercritical state, the method comprising:
causing the substrate to be accommodated in a processing container;
increasing a pressure inside the processing container from a pressure lower than a critical pressure of the processing fluid to a pressure higher than the critical pressure; and
holding the pressure inside the processing container at the pressure higher than the critical pressure of the processing fluid after the increasing,
wherein during at least part of a time period for the increasing, the processing fluid is supplied into the processing container from a fluid supply source while the processing fluid is discharged simultaneously from the processing container at a discharge flow rate and the discharge flow rate is changed to be different in a first time period for the increasing than a second time period for the increasing after the first time period.

### Claim 6 (depends on 5)

The substrate processing method of claim 5, wherein during an entire time period for the increasing, the processing fluid is supplied into the processing container from a fluid supply source while the processing fluid is discharged simultaneously from the processing container at the discharge flow rate.

### Claim 7 (depends on 5)

The substrate processing method of claim 5, wherein the discharge flow rate in the first time period is larger than the discharge flow rate in the second time period.

### Claim 8 (depends on 5)

A non-transitory computer-readable storage medium storing a program that, when executed by a computer that controls an operation of a substrate processing apparatus, causes the computer to control the operation of the substrate processing apparatus and execute the substrate processing method of claim 5.

### Claim 9 (depends on 1)

The substrate processing apparatus of claim 1, wherein the at least one nozzle includes a first nozzle positioned at the second end of the processing container and a second nozzle facing a bottom of the substrate holder.

### Claim 10 (depends on 5)

The substrate processing method of claim 5, further comprising:
alternately repeating a decreasing of pressure inside the processing container by discharging the processing fluid from inside the processing chamber, and an increasing of pressure inside the processing container by supplying the processing fluid into the processing container, after the holding,
wherein the pressure within the chamber remains higher than the critical pressure of the processing fluid during the alternately repeating.