# US 10,504,716 B2 · Method for manufacturing semiconductor device and manufacturing method of the same

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 10,504,716 B2
- Document ID: US10504716B2
- Status: Granted
- Kind: B2
- Application number: 15/922,296
- Filed: 2018-03-15
- Published: 2019-09-19
- Granted: 2019-12-10
- Earliest claimed: 2018-03-15
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Company Ltd.
- Inventors: Yung-Lung Lin; Hau-Yi Hsiao; Chih-Hui Huang; Kuo-Hwa Tzeng; Cheng-Hsien Chou
- Web page: https://patentgrep.com/patent/US10504716B2

## CPC

- H10P 90/128: {by edge treatment, e.g. chamfering}
- H10P 10/128: {by direct semiconductor to semiconductor bonding}
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10P 52/402: {of semiconductor materials}
- H10P 70/10: {Cleaning before device manufacture, i.e. Begin-Of-Line process}
- H10P 70/15: {by wet cleaning only (H10P70/52 takes precedence)}
- H10P 90/18: {by shaping}
- H10P 90/1914: {using bonding}
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

The present disclosure provides a method for wafer bonding, including providing a wafer, forming a sacrificial layer on a top surface of the first wafer, trimming an edge of the first wafer to obtain a first wafer area, cleaning the top surface of the first wafer, removing the sacrificial layer, and bonding the top surface of the first wafer to a second wafer having a second wafer area greater than the first wafer area.

## Claims

### Claim 1

A method for wafer bonding, comprising:
providing a first wafer;
forming a sacrificial layer on a top surface of the first wafer;
trimming an edge of the first wafer to obtain a first wafer area;
cleaning the top surface of the first wafer;
removing the sacrificial layer;
bonding the top surface of the first wafer to a second wafer having a second wafer area greater than the first wafer area; and
thinning the first wafer from a bottom surface opposite to the top surface after trimming the edge of the first wafer, until a trimmed edge is reached.

### Claim 2 (depends on 1)

The method of claim 1, wherein a thickness of the sacrificial layer is between 500 angstrom to 50000 angstrom.

### Claim 3 (depends on 1)

The method of claim 1, wherein the cleaning the top surface of the first wafer comprises a basic and an acidic etching to the top surface.

### Claim 4 (depends on 1)

The method of claim 1, further comprising forming an epitaxial layer after forming the sacrificial layer.

### Claim 5 (depends on 1)

The method of claim 1, further comprising forming a bonding layer over the second wafer prior to bonding the first wafer to the second wafer.

### Claim 6 (depends on 1)

The method of claim 1, further comprising forming an oxide layer over the top surface of the first wafer subsequent to removing the sacrificial layer.

### Claim 7 (depends on 1)

The method of claim 1, further comprising forming an epitaxial layer before forming the sacrificial layer.

### Claim 8 (depends on 7)

The method of claim 7, wherein a width of a trimmed edge of the first wafer is in a range of from about 1 mm to about 3 mm.

### Claim 9 (depends on 8)

The method of claim 8, wherein a depth of the trimmed edge of the first wafer is in a range of from about 0.01 μm to about 200 μm.

### Claim 10

A method for wafer bonding, comprising:
providing a first wafer having a first bonding surface;
edge-trimming the first wafer at the first bonding surface;
cleaning the first bonding surface; and
performing chemical mechanical polishing (CMP) on the first bonding surface.

### Claim 11 (depends on 10)

The method of claim 10, further comprising forming a SiGe expitaxial layer over the first bonding surface before the edge-trimming and performing the CMP on the SiGe epitaxial layer of the first wafer.

### Claim 12 (depends on 10)

The method of claim 10, further comprising forming a SiGe expitaxial layer over the first bonding surface after the edge-trimming and performing the CMP on the bonding surface of the first wafer.

### Claim 13 (depends on 10)

The method of claim 10, wherein the edge-trimming comprises reducing a diameter of the first wafer in a range of from about 2 mm to about 6 mm in proximal to the first bonding surface.

### Claim 14 (depends on 10)

The method of claim 10, wherein the edge-trimming comprises reducing a thickness of the first wafer in a range of from about 0.01 μm to about 200 μm in proximal to the first bonding surface.

### Claim 15 (depends on 10)

The method of claim 10, further comprising bonding the first wafer having a first diameter at the first bonding surface to a second wafer having a second diameter at a second bonding surface, the second diameter being greater than the first diameter.

### Claim 16 (depends on 10)

The method of claim 10, wherein the CMP is performed subsequent to cleaning the first bonding surface.

### Claim 17

A method for forming an edge-trimmed wafer, comprising:
providing a wafer having a first surface;
edge-trimming the wafer at the first surface by reducing a diameter of the wafer in a range of from about 2 mm to about 6 mm and reducing a thickness of the wafer in a range of from about 0.01 μm to about 200 μm;
cleaning the first surface by a basic and an acidic etch; and
performing a chemical mechanical polishing (CMP) on the first surface after cleaning the first surface.

### Claim 18 (depends on 17)

The method of claim 17, further comprising ashing and hydrogen fluoride etching after the CMP.

### Claim 19 (depends on 17)

The method of claim 17, further comprising forming a sacrificial layer over the first surface prior to the edge-trimming at the first surface.

### Claim 20 (depends on 19)

The method of claim 19, further comprising removing the sacrificial layer after the edge-trimming at the first surface.