# US 10,504,715 B2 · Back-side friction reduction of a substrate > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,504,715 B2 - Document ID: US10504715B2 - Status: Granted - Kind: B2 - Application number: 15/826,091 - Filed: 2017-11-29 - Published: 2018-03-22 - Granted: 2019-12-10 - Earliest claimed: 2016-07-21 - Assignees: Tokyo Electron Limited - Applicants: Tokyo Electron Limited - Inventors: Hoyoung Kang - Web page: https://patentgrep.com/patent/US10504715B2 ## CPC - H10P 90/124: {by processing the backside of the wafers} - G03F 7/16: Coating processes; Apparatus therefor (applying coatings to base materials in general B05; applying photosensitive compositions to base for photographic purposes G03C1/74) - G03F 7/20: Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) - G03F 7/26: Processing photosensitive materials; Apparatus therefor (G03F7/12 - G03F7/24 take precedence) - H10P 72/0464: {characterised by the construction of the transfer chamber} - H10P 72/0468: {comprising a chamber adapted to a particular process} - H10P 76/2041: {Photolithographic processes} - H10P 72/0434: {mainly by convection} - H10P 72/0448: {Apparatus for applying a liquid, a resin, an ink or the like} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract A processing chamber system includes a substrate mounting module configured to secure a substrate within a first processing chamber. The system also includes a first deposition module configured to apply a light-sensitive film to a front side surface of the substrate, and a second deposition module configured to apply a film layer to a backside surface of the substrate. The front side surface is opposite to the backside surface of the substrate. A substrate has a bare backside surface with a first coefficient of friction. A film layer is formed onto the backside surface of the substrate. The film layer formed on the backside surface of the substrate has a second coefficient of friction. The second coefficient of friction is lower than the first coefficient of friction. ## Claims ### Claim 1 A method of treating a substrate, the method comprising: receiving the substrate into a substrate processing chamber, the substrate having a front side surface and a backside surface opposite to the front side surface; forming a flourochemical film layer on the backside surface of the substrate based, at least in part, on exposing the backside surface to a fluorine-containing liquid or gas, and exposing the front side surface to a gas maintained at a higher pressure than the fluorine-containing gas or liquid, the backside surface of the substrate has a first coefficient of friction prior to forming the film layer, the film layer formed on the backside surface of the substrate has a second coefficient of friction, the second coefficient of friction is lower than the first coefficient of friction, forming a photoresist layer on the front side surface, wherein developing the photoresist layer subsequent to exposure of the photoresist layer to a pattern of actinic radiation, wherein the film layer on the backside surface of the substrate is formed prior to the exposure of the photoresist layer to the pattern of actinic radiation, and wherein the flourochemical layer is entirely made of perfluorodecylmonochlorodimethylsilane, perfluorocthylmonochlorodimethylsilane, perfluorobuthylmonochlorodimethylsilane, perfluorodecylethoxydimethylsilane, perfluoroooctylmethoxydimethylsilane, or perfluorodecylmethoxydimethylsilane. ### Claim 2 (depends on 1) The method of claim 1, wherein the forming a film layer comprises molecular vapor deposition or molecular liquid deposition. ### Claim 3 (depends on 1) The method of claim 1, further comprising removing a film layer, wherein the removing the film layer comprises one of exposing the film layer to an oxygen-containing gas, exposing the film layer to an oxygen-containing plasma, or exposing the film layer to a combination of an oxygen-containing gas and ultra-violet light. ### Claim 4 (depends on 1) The method of claim 1, further comprising: exposing the backside surface to a chemistry treatment prior to the forming a film layer on the backside surface, wherein the chemistry treatment includes one of water, monoatomic oxygen, diatomic oxygen, or triatomic oxygen. ### Claim 5 (depends on 1) The method of claim 1, further comprising: securing the substrate to a substrate chuck after forming the film layer onto the backside surface of the substrate, wherein a first measured coefficient of friction of the substrate prior to forming the film layer on the backside surface is greater than a second measured coefficient of friction of the substrate after the film layer is formed on the backside surface. ### Claim 6 (depends on 5) The method of claim 5, wherein a first bowing of the substrate having the film layer adhered to the backside surface of the substrate is less than a second bowing of the substrate without the film layer adhered to the backside surface when the substrate is secured to a chuck during the first bowing and the second bowing. ### Claim 7 (depends on 5) The method of claim 5, wherein a first distortion of the substrate having the film layer adhered to the backside surface of the substrate is less than a second distortion of the substrate without the film layer adhered to the backside surface when the substrate is secured to a chuck during the first distortion and the second distortion.