# US 10,504,704 B2 · Plasma etching systems and methods using empirical mode decomposition > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,504,704 B2 - Document ID: US10504704B2 - Status: Granted - Kind: B2 - Application number: 15/365,228 - Filed: 2016-11-30 - Published: 2017-03-23 - Granted: 2019-12-10 - Earliest claimed: 2015-04-23 - Assignees: Lam Research Corporation - Applicants: Lam Research Corporation - Inventors: Luc Albarede; Yassine Kabouzi; Jorge Luque; Andrew D. Bailey, III - Web page: https://patentgrep.com/patent/US10504704B2 ## CPC - H01J 37/32963: {End-point detection} - H01J 37/32082: {Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence)} - H01J 37/32449: {Gas control, e.g. control of the gas flow} - H01J 37/32972: {Spectral analysis} - H01J 37/32981: {Gas analysis} - H01J 37/3299: {Feedback systems} - H01J 37/321: {the radio frequency energy being inductively coupled to the plasma} - H01J 2237/334: Etching - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract A substrate etching system includes an etching control module, a filtering module, and an endpoint module. The etching control module selectively begins plasma etching of a substrate within an etching chamber. The filtering module, during the plasma etching of the substrate: receives a signal including endpoint information; decomposes the signal using empirical mode decomposition (EMD); and generates a filtered signal based on results of the EMD. The endpoint module indicates when an endpoint of the plasma etching of the substrate has been reached based on the filtered signal. The etching control module ends the plasma etching of the substrate in response to the indication that the endpoint of the plasma etching of the substrate has been reached. ## Claims ### Claim 1 A substrate etching system, comprising: an etching control module configured to selectively begin plasma etching of a substrate within an etching chamber; a filtering module configured to, during the plasma etching of the substrate: receive a signal including endpoint information; decompose the signal using empirical mode decomposition (EMD) thereby producing one or more components including endpoint information, one or more components including noise information, and a final residual; and generate a filtered signal based on the one or more components including endpoint information and the final residual and independent of the one or more components including noise information; and an endpoint module configured to indicate when an endpoint of the plasma etching of the substrate has been reached based on the filtered signal, wherein the etching control module is further configured to end the plasma etching of the substrate in response to the indication that the endpoint of the plasma etching of the substrate has been reached. ### Claim 2 (depends on 1) The substrate etching system of claim 1 further comprising a normalization module configured to receive a second signal including endpoint information, to receive a third signal not including endpoint information, to normalize the second signal relative to the third signal to produce the signal including endpoint information, and to output the signal including endpoint information to the filtering module. ### Claim 3 (depends on 2) The substrate etching system of claim 2 wherein the normalization module is configured to select the third signal based on one or more operating parameters of the substrate etching system. ### Claim 4 (depends on 2) The substrate etching system of claim 2 wherein the normalization module is configured to select a confinement ring signal generated by a confinement ring sensor as the third signal when a confinement ring is moving within the etching chamber. ### Claim 5 (depends on 2) The substrate etching system of claim 2 wherein the normalization module is configured to select a power signal indicating a power of the etching chamber as the third signal when a power supply that supplies power to the etching chamber is being tuned. ### Claim 6 (depends on 2) The substrate etching system of claim 2 further comprising: a first optical emission spectroscopy (OES) sensor configured to generate the second signal based on optical characteristics of plasma within the etching chamber; and a second OES sensor configured to generate the third signal independent of the plasma within the etching chamber. ### Claim 7 (depends on 1) The substrate etching system of claim 1 further comprising a normalization module configured to normalize a first portion of a second signal relative to a second portion of the second signal to produce the signal including endpoint information and to output the signal including endpoint information to the filtering module, wherein the first portion of the second signal includes endpoint information, and wherein the second portion of the second signal does not include endpoint information. ### Claim 8 (depends on 7) The substrate etching system of claim 7 wherein the normalization module is configured to select the second portion of the second signal based on one or more operating parameters of the substrate etching system. ### Claim 9 (depends on 1) The substrate etching system of claim 1 wherein the endpoint module is configured to indicate that the endpoint of the plasma etching of the substrate has been reached when a change in the filtered signal is greater than a predetermined value. ### Claim 10 (depends on 1) The substrate etching system of claim 1 wherein the etching control module is configured to: open a gas source and actuate a power source to apply power to begin the plasma etching of the substrate; and close the gas source and actuate the power source to end the plasma etching of the substrate in response to the indication that the endpoint of the plasma etching of the substrate has been reached. ### Claim 11 A substrate etching system, comprising: an etching control module configured to selectively begin plasma etching of a substrate within an etching chamber; a normalization module configured to normalize a first wavelength of a first signal relative to a second wavelength of the first signal to produce a second signal including endpoint information and to output the second signal including endpoint information, wherein the first wavelength of the first signal includes endpoint information, and wherein the second wavelength of the first signal does not include endpoint information; a filtering module configured to, during the plasma etching of the substrate: receive the second signal including endpoint information; decompose the second signal using empirical mode decomposition (EMD); and generate a filtered signal based on results of the EMD; and an endpoint module configured to indicate when an endpoint of the plasma etching of the substrate has been reached based on the filtered signal, wherein the etching control module is further configured to end the plasma etching of the substrate in response to the indication that the endpoint of the plasma etching of the substrate has been reached. ### Claim 12 (depends on 11) The substrate etching system of claim 11 further comprising an optical emission spectroscopy (OES) sensor configured to generate the first signal based on optical characteristics of plasma within the etching chamber. ### Claim 13 (depends on 11) The substrate etching system of claim 11 wherein the normalization module is configured to select the second wavelength of the first signal based on one or more operating parameters of the substrate etching system. ### Claim 14 (depends on 11) The substrate etching system of claim 11 wherein the endpoint module is configured to indicate that the endpoint of the plasma etching of the substrate has been reached when a change in the filtered signal is greater than a predetermined value. ### Claim 15 (depends on 11) The substrate etching system of claim 11 wherein the etching control module is configured to: open a gas source and actuate a power source to apply power to begin the plasma etching of the substrate; and close the gas source and actuate the power source to end the plasma etching of the substrate in response to the indication that the endpoint of the plasma etching of the substrate has been reached.