# US 10,504,702 B2 · Adjustable extended electrode for edge uniformity control

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- Number: US 10,504,702 B2
- Document ID: US10504702B2
- Status: Granted
- Kind: B2
- Application number: 16/026,853
- Filed: 2018-07-03
- Published: 2018-11-01
- Granted: 2019-12-10
- Earliest claimed: 2016-12-16
- Assignees: Applied Materials, Inc.
- Applicants: Applied Materials, Inc.
- Inventors: Olivier Luere; Leonid Dorf; Rajinder Dhindsa; Sunil Srinivasan; Denis M. Koosau; James Rogers
- Web page: https://patentgrep.com/patent/US10504702B2

## CPC

- H01J 37/32642: {Focus rings}
- H01J 37/32: Gas-filled discharge tubes (heating by discharge H05B)
- H01J 37/32082: {Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence)}
- H01J 37/32449: {Gas control, e.g. control of the gas flow}
- H01J 37/32513: {Sealing means, e.g. sealing between different parts of the vessel}
- H01J 37/32522: {Temperature}
- H01J 2237/334: Etching
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes an edge ring having a top surface and a bottom surface. An adjustable tuning ring is positioned beneath the bottom surface of the edge ring. The adjustable tuning ring has an upper surface and a lower surface. The lower surface is configured to interface with an actuating mechanism configured to move the adjustable tuning ring relative to the edge ring.

## Claims

### Claim 1

A process kit for a substrate support in a processing chamber, the process kit comprising:
an edge ring having a top surface and a bottom surface; and
an adjustable tuning ring positioned beneath the bottom surface of the edge ring, the adjustable tuning ring having an upper surface and a lower surface, the lower surface configured to interface with an actuating mechanism configured to move the adjustable tuning ring relative to the edge ring.

### Claim 2 (depends on 1)

The process kit of claim 1 wherein the adjustable tuning ring further comprises:
an annular body;
a cavity formed in the annular body, the cavity formed in the bottom surface of the annular body; and
an access orifice formed in the annular body, the access orifice extending from the top surface of the adjustable tuning ring into the cavity.

### Claim 3 (depends on 2)

The process kit of claim 2, wherein the access orifice has a first diameter and the cavity has a second diameter, the first diameter being smaller than the second diameter.

### Claim 4 (depends on 3)

The process kit of claim 3, wherein the cavity has a first diameter and the access orifice has a second diameter, the first diameter being larger than the second diameter.

### Claim 5 (depends on 2)

The process kit of claim 2, wherein the adjustable tuning ring further comprises:
a coating formed on the upper surface.

### Claim 6

A substrate support for a substrate processing chamber, the substrate support comprising:
a dielectric body configured to support a substrate thereon;
an edge ring disposed at least partially on the dielectric body, the edge ring having a top surface and a bottom surface;
an adjustable tuning ring positioned beneath the edge ring, the adjustable tuning ring having a top surface, the top surface of the adjustable tuning ring and the edge ring defining an adjustable gap; and
an actuating mechanism coupled to the adjustable tuning ring, the actuating mechanism configured to alter the adjustable gap.

### Claim 7 (depends on 6)

The substrate support of claim 6, wherein the actuating mechanism comprises:
a lift pin having a first end and a second end, the first end of the lift pin contacting a bottom surface of the adjustable tuning ring, the second end of the lift pin in communication with a lift mechanism.

### Claim 8 (depends on 6)

The substrate support of claim 6, wherein the adjustable tuning ring further comprises:
an access orifice disposed in the top surface, the access orifice having a first diameter smaller than a second diameter.

### Claim 9 (depends on 8)

The substrate support of claim 8, wherein the actuating mechanism is a screw accessible through the access orifice, the screw configured to be rotated through the access orifice to actuate the adjustable tuning ring.

### Claim 10 (depends on 6)

The substrate support of claim 6 further comprising:
a cooling plate disposed below the dielectric body, wherein the cooling plate couples power to the edge ring at least partially through the tuning ring.

### Claim 11 (depends on 10)

The substrate support of claim 10, wherein a capacitance between the edge ring and the tuning ring is adjustable by the actuating mechanism.

### Claim 12 (depends on 10)

The substrate support of claim 10 further comprising:
one or more dielectric pads disposed between the tuning ring and the cooling plate, the dielectric pads creating a gap decreasing a capacitance and minimizing the power coupled from the cathode to the tuning ring.

### Claim 13

A processing chamber comprising:
a dielectric body disposed in the processing chamber and configured to support a substrate thereon;
an edge ring disposed at least partially on the dielectric body, the edge ring having a top surface and a bottom surface;
an adjustable tuning ring positioned beneath the edge ring, the adjustable tuning ring having a top surface, the top surface of the adjustable tuning ring and the edge ring defining an adjustable gap; and
an actuating mechanism coupled to the adjustable tuning ring, the actuating mechanism configured to alter the adjustable gap.

### Claim 14 (depends on 13)

The processing chamber claim 13, wherein the actuating mechanism comprises:
a lift pin having a first end and a second end, the first end of the lift pin contacting a bottom surface of the adjustable tuning ring, the second end of the lift pin in communication with a lift mechanism.

### Claim 15 (depends on 13)

The processing chamber claim 13, wherein the adjustable tuning ring further comprises:
an access orifice disposed in the top surface, the access orifice having a first diameter smaller than a second diameter.

### Claim 16 (depends on 15)

The processing chamber of claim 15, wherein the actuating mechanism is a screw accessible through the access orifice, the screw configured to be rotated through the access orifice to actuate the adjustable tuning ring.

### Claim 17 (depends on 13)

The processing chamber of claim 13 further comprising:
a cooling plate disposed below the dielectric body, wherein the cooling plate couples power to the edge ring at least partially through the tuning ring.

### Claim 18 (depends on 17)

The processing chamber of claim 17, wherein a capacitance between the edge ring and the tuning ring is adjustable by the actuating mechanism.

### Claim 19 (depends on 17)

The processing chamber of claim 17 further comprising:
one or more dielectric pads disposed between the tuning ring and the cooling plate, the dielectric pads creating a gap.

### Claim 20 (depends on 13)

The processing chamber of claim 13, wherein the actuating mechanism is configured to control a size of a plasma sheath formed between a plasma and the substrate.
