# US 10,504,698 B2 · Plasma processing apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,504,698 B2 - Document ID: US10504698B2 - Status: Granted - Kind: B2 - Application number: 14/868,554 - Filed: 2015-09-29 - Published: 2016-04-28 - Granted: 2019-12-10 - Earliest claimed: 2014-10-27 - Assignees: Tokyo Electron Limited - Applicants: Tokyo Electron Limited - Inventors: Masayuki Kohno; Ryou Son; Naoki Matsumoto; Jun Yoshikawa; Michitaka Aita; Ippei Shimizu; Yusuke Yoshida; Koji Koyama; Masami Sudayama; Yukiyoshi Aramaki - Web page: https://patentgrep.com/patent/US10504698B2 ## CPC - H01J 37/32192: {Microwave generated discharge (H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence)} - H01J 37/32266: {Means for controlling power transmitted to the plasma} - H01J 37/32944: {Arc detection} - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract A plasma processing apparatus is provided that is configured to supply a gas into a chamber, generate a plasma from the gas using a power of an electromagnetic wave, and perform a predetermined plasma process on a substrate that is held by a mounting table. The plasma processing apparatus includes a dielectric window through which the electromagnetic wave that is output from an electromagnetic wave generator is propagated and transmitted into the chamber, a support member that supports the dielectric window, a partition member that separates a space where the support member is arranged from a plasma generation space and includes a protrusion abutting against the dielectric window, and a conductive member that is arranged between the partition member and the dielectric window and is protected from being exposed to the plasma generation space by the protrusion. ## Claims ### Claim 1 A plasma processing apparatus configured to supply a gas into a chamber, generate a plasma from the gas using a power of an electromagnetic wave, and perform a predetermined plasma process on a substrate that is held by a mounting table, the plasma processing apparatus comprising: a chamber in which plasma is generated; a dielectric window through which the electromagnetic wave that is output from an electromagnetic wave generator is propagated and transmitted into the chamber; a support that supports the dielectric window; a partition arranged below the dielectric window, the partition separating a space where the support is arranged from a plasma generation space in the chamber, and including a protrusion abutting against the dielectric window; and a conductive ring formed of silicon that is arranged between the partition and the dielectric window, and an inner diameter side of the conductive ring is covered by the protrusion to protect the conductive ring from being exposed to the plasma generation space, wherein a gap between the protrusion and the conductive plate is arranged to have a distance of less than 0.68 mm. ### Claim 2 (depends on 1) The plasma processing apparatus according to claim 1, wherein the partition member is L-shaped, and an inner corner of the L-shaped partition member is arranged to be close to the conductive ring. ### Claim 3 (depends on 1) The plasma processing apparatus according to claim 1, further comprising: an installation ring that is arranged to extend below the support, and a gap is provided between the partition and the installation ring. ### Claim 4 (depends on 1) The plasma processing apparatus according to claim 1, wherein the conductive ring is connected to ground. ### Claim 5 (depends on 1) The plasma processing apparatus according to claim 1, further comprising: a focus ring that is arranged at an outer edge side of the mounting table; and a conductive film that is arranged on at least one of a front surface or a back surface of the focus ring. ### Claim 6 (depends on 5) The plasma processing apparatus according to claim 5, wherein the conductive film is connected to ground. ### Claim 7 (depends on 1) The plasma processing apparatus according to claim 1, wherein the gap is provided in a ring-shape, and is positioned between the protrusion of the partition and a plasma generation space side of the conductive ring. ### Claim 8 A plasma processing apparatus configured to supply a gas into a chamber, generate a plasma from the gas using a power of an electromagnetic wave, and perform a predetermined plasma process on a substrate that is held by a mounting table, the plasma processing apparatus comprising: a chamber in which plasma is generated; a dielectric window through which the electromagnetic wave that is output from an electromagnetic wave generator is propagated and transmitted into the chamber; a support that supports the dielectric window; a partition arranged below the dielectric window, the partition separating a space where the support is arranged from a plasma generation space in the chamber, and including a protrusion abutting against the dielectric window; and a conductive ring formed of SiO2 that is arranged between the partition and the dielectric window and is protected from being exposed to the plasma generation space by the protrusion wherein a gap between the protrusion and the conductive ring is arranged to have a distance less than 0.39 mm.