# US 10,504,697 B2 · Particle generation suppresor by DC bias modulation > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,504,697 B2 - Document ID: US10504697B2 - Status: Granted - Kind: B2 - Application number: 15/424,355 - Filed: 2017-02-03 - Published: 2017-05-25 - Granted: 2019-12-10 - Earliest claimed: 2013-11-06 - Assignees: Applied Materials, Inc. - Applicants: Applied Materials, Inc. - Inventors: Jonghoon Baek; Soonam Park; Xinglong Chen; Dmitry Lubomirsky - Web page: https://patentgrep.com/patent/US10504697B2 ## CPC - H01J 37/32082: {Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence)} - C23C 16/4401: {Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber} - C23C 16/4404: {Coatings or surface treatment on the inside of the reaction chamber or on parts thereof} - C23C 16/503: using DC or AC discharges - C23C 16/509: using internal electrodes - C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} - H01J 37/32091: {the radio frequency energy being capacitively coupled to the plasma} - H01J 37/32146: {Amplitude modulation, includes pulsing} - H01J 37/32532: {Electrodes} - H01J 37/3255: {Material} - H01J 37/32568: {Relative arrangement or disposition of electrodes; moving means} - H01J 37/32697: {Electrostatic control} - H01J 2237/334: Etching - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) ## Abstract Embodiments of the present disclosure generally relate to an apparatus and method for reducing particle generation in a processing chamber. In one embodiment, an apparatus for processing a substrate is disclosed. The apparatus includes a chamber body, a lid assembly disposed above the chamber body, the lid assembly comprising a top electrode and a bottom electrode positioned substantially parallel to the top electrode, a gas distribution plate disposed between a substrate processing region and the lid assembly, and a substrate support disposed within the chamber body, the substrate support supporting having a substrate supporting surface, wherein the top electrode is in electrical communication with a radio frequency (RF) power supply and a DC bias modulation configuration, and the DC bias modulation configuration is configured to operate the top electrode at a constant zero DC bias voltage during a process. ## Claims ### Claim 1 An apparatus for processing a substrate, comprising: a chamber body; a lid assembly disposed above the chamber body, the lid assembly comprising a top electrode and a bottom electrode positioned substantially parallel to the top electrode; a gas distribution plate disposed between a substrate processing region and the lid assembly; and a substrate support disposed within the chamber body, the substrate support supporting having a substrate supporting surface, wherein the top electrode is in electrical communication with a radio frequency (RF) power supply and a DC bias modulation configuration, and the DC bias modulation configuration is configured to operate the top electrode at a constant zero DC bias voltage during a process. ### Claim 2 (depends on 1) The apparatus of claim 1, wherein the DC bias modulation configuration is disposed between the top electrode and ground. ### Claim 3 (depends on 2) The apparatus of claim 2, wherein the DC bias modulation configuration comprises a DC power supply and a power controller configured to apply a constant zero DC bias voltage to the top electrode. ### Claim 4 (depends on 3) The apparatus of claim 3, wherein the DC bias modulation configuration further comprises a RF filter coupled to the DC power supply and configured to prevent RF signals from the RF power supply to enter the DC power supply. ### Claim 5 (depends on 2) The apparatus of claim 2, wherein the DC bias modulation configuration comprises an electrical component configured to direct a DC bias generated at the top electrode to ground. ### Claim 6 (depends on 5) The apparatus of claim 5, wherein the electrical component comprises a low pass filter. ### Claim 7 (depends on 6) The apparatus of claim 6, wherein the electrical component provides a high impedance path to RF signal from the RF power supply and a low or no impedance path to DC signal from the top electrode. ### Claim 8 (depends on 5) The apparatus of claim 5, wherein the electrical component comprises a core element and a coil wound around a portion of the core element. ### Claim 9 (depends on 8) The apparatus of claim 8, wherein the core element comprise a high magnetic permeability rod or tube. ### Claim 10 (depends on 5) The apparatus of claim 5, wherein the electrical component comprises a band pass filter in a single-stage or multi-stage configuration. ### Claim 11 (depends on 1) The apparatus of claim 1, wherein the process is a plasma etch process. ### Claim 12 (depends on 1) The apparatus of claim 1, wherein the process is a film deposition process. ### Claim 13 (depends on 1) The apparatus of claim 1, wherein the RF power supply provides RF power of about 5 W to 5000 W during the process.