# US 10,504,682 B2 · Conductive beam optic containing internal heating element > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,504,682 B2 - Document ID: US10504682B2 - Status: Granted - Kind: B2 - Application number: 15/901,778 - Filed: 2018-02-21 - Published: 2019-08-22 - Granted: 2019-12-10 - Earliest claimed: 2018-02-21 - Assignees: Varian Semiconductor Equipment Associates, Inc. - Applicants: Varian Semiconductor Equipment Associates, Inc. - Inventors: Shengwu Chang; Frank Sinclair; Alexandre Likhanskii; Christopher Campbell; Robert C. Lindberg; Eric D. Hermanson - Web page: https://patentgrep.com/patent/US10504682B2 ## CPC - H01J 37/05: Electron or ion-optical arrangements for separating electrons or ions according to their energy {or mass}(particle separator tubes H01J49/00) - H01J 37/3171: {for ion implantation} - H01J 2237/022: Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube - H01J 2237/057: Energy or mass filtering - H01J 2237/31705: Impurity or contaminant control - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract Provided herein are approaches for reducing particles in an ion implanter. An electrostatic filter may include a housing and a plurality of conductive beam optics within the housing. The conductive beam optics are arranged around an ion beam-line directed towards a wafer, and may include entrance aperture electrodes proximate an entrance aperture of the housing. The conductive beam optics may further include energetic electrodes downstream along the ion beam-line from the entrance aperture electrodes, and ground electrodes downstream from the energetic electrodes. The energetic electrodes are positioned farther away from the ion beam-line than the entrance electrodes and the ground electrodes, thus causing the energetic electrodes to be physically blocked from impact by an envelope of back-sputter material returning from the wafer. The electrostatic filter may further include an electrical system for independently delivering a voltage and a current to each of the conductive beam optics. ## Claims ### Claim 1 An electrostatic filter for delivering an ion beam to a wafer, the electrostatic filter comprising: a housing; and a plurality of conductive beam optics within the housing, the plurality of conductive beam optics arranged around an ion beam-line, wherein at least one conductive beam optic of the plurality of conductive beam optics includes an internal heating element, and wherein the internal heating element is a heating lamp surrounded by a hollow shell, the heating lamp electrically connected with a conductor. ### Claim 2 (depends on 1) The electrostatic filter of claim 1, wherein the hollow shell is a glassy carbon. ### Claim 3 (depends on 1) The electrostatic filter of claim 1, wherein the hollow shell is graphite. ### Claim 4 (depends on 1) The electrostatic filter of claim 1, further comprising an insulator disposed within each end of the hollow shell. ### Claim 5 (depends on 1) The electrostatic filter of claim 1, the plurality of conductive beam optics comprising: a set of entrance aperture electrodes proximate an entrance aperture of the housing; a set of energetic electrodes downstream along the ion beam-line from the set of entrance aperture electrodes; and a set of ground electrodes downstream along the ion beam-line of the set of energetic electrodes, wherein the set of energetic electrodes is positioned farther away from the ion beam-line than the set of entrance aperture electrodes and the set of ground electrodes. ### Claim 6 (depends on 5) The electrostatic filter of claim 5, wherein each of the set of energetic electrodes includes an internal heating element. ### Claim 7 (depends on 1) The electrostatic filter of claim 1, further comprising an electrical system in communication with the plurality of conductive beam optics, the electrical system configured to independently supply a voltage and a current to each of the plurality of conductive beam optics. ### Claim 8 (depends on 7) The electrostatic filter of claim 7, the electrical system comprising a set of relays operable to control the voltage and the current to the internal heating element. ### Claim 9 An ion implantation system, comprising: an electrostatic filter for delivering an ion beam to a wafer, the electrostatic filter comprising: a housing having an exit proximate the wafer; and a plurality of conductive beam optics within the housing, the plurality of conductive beam optics arranged around an ion beam-line, and the plurality of conductive beam optics comprising: a set of entrance aperture electrodes proximate an entrance aperture of the housing; a set of energetic electrodes downstream along the ion beam-line from the set of entrance aperture electrodes; and a set of ground electrodes downstream along the ion beam-line of the set of energetic electrodes, wherein the set of energetic electrodes is positioned farther away from the ion beam-line than the set of entrance aperture electrodes and the set of ground electrodes, wherein at least one of the plurality of conductive beam optics includes an internal heating element, and wherein the internal heating element comprises a heating lamp surrounded by a hollow shell; and an electrical system in communication with the electrostatic filter, the electrical system configured to supply a voltage and a current to the plurality of conductive beam optics. ### Claim 10 (depends on 9) The ion implantation system of claim 9, wherein the at least one of the plurality of conductive beam optics including the internal heating element further comprises: a conductor electrically connected with the heating lamp, wherein the conductor is part of the electrical system; and an insulator disposed within an opening at each end of the hollow shell. ### Claim 11 (depends on 9) The ion implantation system of claim 9, wherein each of the plurality of conductive beam optics is connected in parallel to allow independent adjustment of the voltage and the current. ### Claim 12 (depends on 9) The ion implantation system of claim 9, further comprising a set of exit plates extending from the housing, wherein the set of exit plates is oriented approximately parallel to a direction of travel of the ion beam. ### Claim 13 (depends on 12) The ion implantation system of claim 12, wherein the set of ground electrodes comprises a set of exit apertures proximate the exit, wherein the set of exit apertures define a maximum envelope of back-sputter material traveling from the wafer and through the exit, between the set of exit apertures, wherein a first pair of exit apertures of the set of exit apertures is positioned proximate a downstream end of the set of exit plates, and wherein a second pair of exit apertures of the set of exit apertures is positioned proximate an upstream end of the set of exit plates. ### Claim 14 A conductive beam optic, comprising: a heating lamp; a hollow shell concentrically disposed about the heating lamp, the hollow shell extending along an entire length of the heating lamp; and a conductor electrically connected with the heating lamp. ### Claim 15 (depends on 14) The conductive beam optic of claim 14, further comprising an insulator disposed within an interior of the hollow shell. ### Claim 16 (depends on 15) The conductive beam optic of claim 15, wherein conductor extends through the insulator. ### Claim 17 (depends on 14) The conductive beam optic of claim 14, wherein the heating lamp is tubular-shaped. ### Claim 18 (depends on 14) The conductive beam optic of claim 14, wherein the hollow shell is one of: a glassy carbon, and graphite.