# US 10,504,659 B2 · Multifunctional optoelectronic devices based on perovskites

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- Number: US 10,504,659 B2
- Document ID: US10504659B2
- Status: Granted
- Kind: B2
- Application number: 16/086,530
- Filed: 2017-03-16
- Published: 2019-03-07
- Granted: 2019-12-10
- Earliest claimed: 2016-04-13
- Assignees: King Abdullah University of Science and Technology
- Applicants: King Abdullah University of Science and Technology
- Inventors: Makhsud I. Saidaminov; Osman M. Bakr
- Web page: https://patentgrep.com/patent/US10504659B2

## CPC

- H10K 85/50: Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
- H01G 9/2009: {Solid electrolytes}
- H10K 71/10: Deposition of organic active material
- H10K 85/30: Coordination compounds
- H10K 30/50: Photovoltaic [PV] devices
- Y02E 10/542: Dye sensitized solar cells
- Y02E 10/549: Organic PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

Embodiments of the present disclosure provide methods of growing halide films (e.g., single crystal halide perovskites or multi-crystal halide perovskites) on a structure, dual-mode photodetectors, methods of use, and the like.

## Claims

### Claim 1

A device, comprising:
a dual-band photodetector having a microcrystalline film deposited on a substrate,
wherein the microcrystalline film is positioned on a top side of the dual-band photodetector and the substrate is positioned on a bottom side of the dual-band photodetector,
wherein the microcrystalline film is a halide perovskite,
wherein the dual-band photodetector is configured to operate as a narrow-band photodetector upon illumination from the top side and the dual-band photodetector is configured to operate as a wide-band photodetector upon illumination from the bottom side.

### Claim 2 (depends on 1)

The device of claim 1, wherein
the halide perovskite is AMX3,
A is an inorganic or organic monovalent cation,
M is a divalent cation selected from the group consisting of: Pb, Sn, Cu, Ni, Co, Fe, Mn, Pd, Cd, Ge, Cs, or Eu, and
X is selected from a halide.

### Claim 3 (depends on 1)

The device of claim 1, wherein
the halide perovskite is selected from the group consisting of: MAPbI3, MAPbBr3, MAPbBr2Cl, MAPbCl3, FAPbI3, FAPbBr3, FAPbCl3, CsPbI3, CsPbBr3, CsPbCl3, MASnI3, MASnBr3, MASnCl3, FASnI3, FASnBr3, FASnCl3, CsSnI3, CsSnBr3, and CsSnCl3,
MA is methylammonium, and
FA is formamidinum.

### Claim 4 (depends on 1)

The device of claim 1, wherein the substrate is conductive substrate.

### Claim 5 (depends on 4)

The device of claim 4, wherein the conductive substrate is selected from indium tin oxide (ITO), fluorinated tin oxide (FTO), or gold.

### Claim 6 (depends on 2)

The device of claim 2, wherein the dual-band photodetector is configurable to be tunable by adjusting the perovskite composition AMX3, the halide (X) composition, the A composition, the M composition, or a combination thereof.

### Claim 7 (depends on 1)

The device of claim 1, wherein the microcrystalline film has a thickness of 10 to 500 microns and the substrate has a thickness of 1 nm to 1000 nm.

### Claim 8 (depends on 1)

The device of claim 1, wherein the top side of the dual-band photodetector is configured to detect light in the red, green, blue, and near-infrared portion of the infrared spectrum.

### Claim 9 (depends on 1)

The device of claim 1, wherein the bottom side of the dual-band photodetector is configured to detect light in the visible, UV-light, and X-ray, regions of the light spectrum.

### Claim 10

A method of making a photodetector, comprising:
providing precursor materials for a microcrystalline film; and
depositing a microcrystalline film on a substrate to form a dual-band photodetector,
wherein the microcrystalline film is positioned on a top side of the dual-band photodetector and the substrate is positioned on a bottom side of the dual-band photodetector,
wherein the microcrystalline film is a halide perovskite,
wherein the dual-band photodetector is configured to operate as a narrow-band photodetector upon illumination from the top side and the dual-band photodetector is configured to operate as a wide-band photodetector upon illumination from the bottom side.

### Claim 11 (depends on 10)

The method of claim 10, wherein
the halide perovskite is AMX3,
A is an inorganic or organic monovalent cation,
M is a divalent cation selected from the group consisting of: Pb, Sn, Cu, Ni, Co, Fe, Mn, Pd, Cd, Ge, Cs, or Eu, and
X is selected from a halide.

### Claim 12 (depends on 10)

The method of claim 10, wherein
the halide perovskite is selected from the group consisting of: MAPbI3, MAPbBr3, MAPbBr2Cl, MAPbCl3, FAPbI3, FAPbBr3, FAPbCl3, CsPbI3, CsPbBr3, CsPbCl3, MASnI3, MASnBr3, MASnCl3, FASnI3, FASnBr3, FASnCl3, CsSnI3, CsSnBr3 and CsSnCl3,
MA is methylammonium, and
FA is formamidinum.

### Claim 13 (depends on 10)

The method of claim 10, wherein the substrate is conductive substrate.

### Claim 14 (depends on 10)

The method of claim 10, wherein the conductive substrate is selected from indium tin oxide (ITO), fluorinated tin oxide (FTO), or gold.