# US 10,504,650 B2 · Multi-layer ceramic capacitor

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- Number: US 10,504,650 B2
- Document ID: US10504650B2
- Status: Granted
- Kind: B2
- Application number: 15/745,693
- Filed: 2016-06-16
- Published: 2018-08-02
- Granted: 2019-12-10
- Earliest claimed: 2015-07-17
- Assignees: TDK Electronics Co., Ltd.
- Applicants: TDK Electronics AG
- Inventors: Tomoya Imura; Goushi Tauchi; Masakazu Hirose; Tomohiro Terada
- Web page: https://patentgrep.com/patent/US10504650B2

## CPC

- H01G 4/1227: {based on alkaline earth titanates}
- C01G 23/006: {Alkaline earth titanates}
- C04B 35/47: based on strontium titanates
- C04B 35/475: based on bismuth titanates
- C04B 35/6262: {of calcined, sintered clinker or ceramics}
- C04B 35/62645: {Thermal treatment of powders or mixtures thereof other than sintering}
- C04B 35/63: using additives specially adapted for forming the products {, e.g.. binder binders}
- C04B 35/638: Removal thereof
- C04B 35/64: Burning or sintering processes (C04B33/32 takes precedence {; powder metallurgy B22F})
- C04B 41/4578: {Coating or impregnating of green ceramics or unset concrete}
- C04B 41/5111: {Ag, Au, Pd, Pt or Cu}
- C04B 41/88: Metals
- H01B 3/12: ceramics
- H01G 4/1218: {based on titanium oxides or titanates (H01G4/1245 takes precedence)}
- H01G 4/30: Stacked capacitors (H01G4/33 takes precedence)
- C01P 2002/34: perovskite-type (ABO3)
- C04B 2235/3201: Alkali metal oxides or oxide-forming salts thereof
- C04B 2235/3206: Magnesium oxides or oxide-forming salts thereof
- C04B 2235/3208: Calcium oxide or oxide-forming salts thereof, e.g. lime
- C04B 2235/3213: Strontium oxides or oxide-forming salts thereof
- C04B 2235/3215: Barium oxides or oxide-forming salts thereof
- C04B 2235/3224: Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B 2235/3227: Lanthanum oxide or oxide-forming salts thereof
- C04B 2235/3229: Cerium oxides or oxide-forming salts thereof
- C04B 2235/3236: Alkaline earth titanates
- C04B 2235/3284: Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
- C04B 2235/3298: Bismuth oxides, bismuthates or oxide forming salts thereof, e.g. zinc bismuthate
- C04B 2235/602: Making the green bodies or pre-forms by moulding
- C04B 2235/656: characterised by specific heating conditions during heat treatment
- C04B 2235/6582: Hydrogen containing atmosphere
- C04B 2235/6583: Oxygen containing atmosphere, e.g. with changing oxygen pressures
- C04B 2235/768: Perovskite structure ABO3
- C04B 2235/80: Phases present in the sintered or melt-cast ceramic products other than the main phase
- H01G 4/012: Form of non-self-supporting electrodes
- H01G 4/248: the terminals embracing or surrounding the capacitive element, e.g. caps (H01G4/252 takes precedence)
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)
- C01G: COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts or peroxyacids C01B15/00; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium, or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds containing nitrogen, other non-metals and metal C01B21/082}; metal amides C01B21/092; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanamide C01C3/16; thiocyanates C01C3/20)
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})
- C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

## Abstract

A multi-layer ceramic capacitor is disclosed. In an embodiment the dielectric composition includes a perovskite crystal structure containing at least Bi, Na, Sr and Ti, wherein the dielectric composition includes a low-Bi phase in which a Bi concentration is no greater than 0.8 times the mean Bi concentration in the dielectric composition as a whole.

## Claims

### Claim 1

A dielectric composition comprising:
a perovskite crystal structure containing at least Bi, Na, Sr and Ti,
wherein the dielectric composition includes a low-Bi phase in which a Bi concentration is not greater than 0.8 times a mean Bi concentration in the dielectric composition as a whole.

### Claim 2 (depends on 1)

The dielectric composition according to claim 1, wherein 0<α≤0.150, where α is a surface area proportion of the low-Bi phase in a cross section of the dielectric composition with respect to the whole of a cross section.

### Claim 3 (depends on 1)

The dielectric composition according to claim 1, wherein 0.125≤β≤2.000, where β is a molar ratio of Bi with respect to Sr in the dielectric composition.

### Claim 4 (depends on 1)

The dielectric composition according to claim 1, further comprising at least one element selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Yb, Ba, Ca, Mg and Zn.

### Claim 5 (depends on 4)

The dielectric composition according to claim 4, wherein the one element is between 1 molar part and 15 molar parts, taking a Ti content of the dielectric composition as 100 molar parts.

### Claim 6 (depends on 1)

A dielectric element comprising:
the dielectric composition according to claim 1.

### Claim 7 (depends on 1)

An electronic component comprising:
a dielectric layer comprising the dielectric composition according to claim 1.

### Claim 8 (depends on 1)

A laminated electronic component comprising:
a laminated portion formed by alternately laminating an internal electrode layer and a dielectric layer comprising the dielectric composition according to claim 1.

### Claim 9 (depends on 8)

A laminated ceramic capacitor comprising:
the laminated electronic component according to claim 8, wherein internal electrode layers are stacked such that end surfaces thereof are alternately exposed at surfaces of two opposing ends of the laminated electronic component.

### Claim 10 (depends on 9)

The laminated ceramic capacitor according to claim 9, wherein the internal electrode layers comprise Cu.

### Claim 11 (depends on 9)

The laminated ceramic capacitor according to claim 9, wherein the internal electrode layers comprise a Cu alloy.

### Claim 12 (depends on 11)

The laminated ceramic capacitor according to claim 11, wherein the Cu alloy comprises a Cu content of at least 95 wt %, taking the Cu alloy as 100 wt %.

### Claim 13 (depends on 9)

The laminated ceramic capacitor according to claim 9, further comprising a pair of external electrodes located at both ends of the laminated electronic component and connected to exposed end surfaces of the internal electrode layers.

### Claim 14 (depends on 13)

The Laminated ceramic capacitor according to claim 13, wherein the external electrodes comprise Cu.

### Claim 15

A method for providing a laminated ceramic capacitor, the method comprising:
providing a dielectric starting material from powders of bismuth oxide (Bi2O3), sodium carbonate (Na2CO3), strontium carbonate (SrCO3) and titanium oxide (TiO2);
preparing a green chip using a sheet method or a printing method employing a paste for dielectric layers and a paste for internal electrodes, wherein the paste for the dielectric layers is an organic paint comprising a mixture of the dielectric starting material and an organic vehicle or wherein the paste for the dielectric layers is an aqueous paint comprising a mixture of the dielectric starting material and an aqueous vehicle;
performing a debinding treatment on the green chip;
baking the green chip thereby forming a main body;
printing or transcribing external electrodes on the main body; and
baking the main body comprising a dielectric composition,
wherein the dielectric starting material is weighed out such that the dielectric composition has a perovskite crystal structure containing at least Bi, Na, Sr and Ti, and wherein the dielectric composition includes a low-Bi phase in which a Bi concentration is not greater than 0.8 times a mean Bi concentration in the dielectric composition as a whole.

### Claim 16 (depends on 15)

The method according to claim 15, further comprising:
preparing the paste for the internal electrodes by mixing a conductive material comprising Au, Pt, Ag, Ag-Pd alloy, Cu or Ni, or various types of oxide which form the conductive material after baking, or organometallic compounds, or resinates with the organic vehicle; and
preparing a paste for the external electrodes in the same way as the paste for the internal electrodes.

### Claim 17 (depends on 15)

The method according to claim 15, wherein the dielectric starting material further comprises a powder selected from barium carbonate (BaCO3), calcium carbonate (CaCO3), magnesium carbonate (MgCO3), zinc oxide (ZnO), lanthanum hydroxide (La(OH)3), neodymium oxide (Nd2O3), samarium oxide (Sm2O3) or gadolinium oxide (Gd2O3).