# US 10,504,638 B2 · Thermistor and device using thermistor

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- Number: US 10,504,638 B2
- Document ID: US10504638B2
- Status: Granted
- Kind: B2
- Application number: 16/061,658
- Filed: 2016-12-13
- Published: 2018-12-27
- Granted: 2019-12-10
- Earliest claimed: 2015-12-18
- Assignees: SEMITEC Corporation
- Applicants: SEMITEC Corporation
- Inventors: Katsuhiko Iwase
- Web page: https://patentgrep.com/patent/US10504638B2

## CPC

- H01C 7/008: {Thermistors (H01C7/02 - H01C7/06 take precedence)}
- G01K 7/22: the element being a non-linear resistance, e.g. thermistor (G01K7/26 takes precedence)
- H01C 1/14: Terminals or tapping points specially adapted for resistors; Arrangements of terminals or tapping points on resistors
- H01C 7/04: having negative temperature coefficient
- H01C: RESISTORS
- G01K: MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR (radiation pyrometry G01J5/00)

## Abstract

Provided are a thermistor and a device using the thermistor by which ohmic contact can be ensured between electrodes formed on a thermistor composition and wiring lines connected to the electrodes, and by which high accuracy temperature detection is possible. A thermistor is provided with a thermistor composition, a pair of electrodes that are formed on the thermistor composition and that contain a noble metal, wires that are joined to the electrodes and that have a passivation film formed on a surface thereof, and a junction material that contains a noble metal oxide which joins the electrodes to the wires.

## Claims

### Claim 1

A thermistor, comprising:
a thermistor composition;
an electrode portion formed on the thermistor composition and containing a noble metal;
a wiring bonded to the electrode portion and having an oxide film as a passivation film formed on a surface thereof; and
a bonding material containing a noble metal oxide, disposed at least between the electrode portion and the wiring with ohmic contact to bond the wiring to the electrode portion.

### Claim 2 (depends on 1)

The thermistor according to claim 1, wherein the electrode portion is formed by the bonding material.

### Claim 3 (depends on 1)

The thermistor according to claim 1, wherein an atomic percentage of a noble metal oxide in a composition of the bonding material is 3 atm % to 60 atm %.

### Claim 4 (depends on 1)

The thermistor according to claim 1, wherein the noble metal oxide in a composition of the bonding material is ruthenium oxide.

### Claim 5 (depends on 1)

The thermistor according to claim 1, wherein a composition of the bonding material comprises at least silicon dioxide, zinc oxide, and aluminum oxide.

### Claim 6 (depends on 1)

The thermistor according to claim 1, wherein a glass contained in a composition of the bonding material is crystallized glass.

### Claim 7 (depends on 1)

The thermistor according to claim 1, wherein the electrode portion is covered with a protective layer of crystallized glass.

### Claim 8 (depends on 1)

The thermistor according to claim 1, wherein a linear expansion coefficient of the thermistor composition is from 4.5×10−6/° C. to 10×10−6/° C., a linear expansion coefficient of the bonding material is from 5×10−6/° C. to 10×10−6/° C., and a linear expansion coefficient of the wiring is from 8×10−6/° C. to 14×10−6/° C.

### Claim 9 (depends on 1)

The thermistor according to claim 1, wherein the wiring having the passivation film formed on the surface thereof is an iron-based alloy.

### Claim 10 (depends on 1)

A device using a thermistor comprising the thermistor according to claim 1.

### Claim 11 (depends on 2)

The thermistor according to claim 2, wherein an atomic percentage of a noble metal oxide in a composition of the bonding material is 3 atm % to 60 atm %.

### Claim 12 (depends on 2)

The thermistor according to claim 2, wherein the noble metal oxide in a composition of the bonding material is ruthenium oxide.

### Claim 13 (depends on 3)

The thermistor according to claim 3, wherein the noble metal oxide in a composition of the bonding material is ruthenium oxide.

### Claim 14 (depends on 2)

The thermistor according to claim 2, wherein a composition of the bonding material comprises at least silicon dioxide, zinc oxide, and aluminum oxide.

### Claim 15 (depends on 3)

The thermistor according to claim 3, wherein a composition of the bonding material comprises at least silicon dioxide, zinc oxide, and aluminum oxide.

### Claim 16 (depends on 4)

The thermistor according to claim 4, wherein a composition of the bonding material comprises at least silicon dioxide, zinc oxide, and aluminum oxide.

### Claim 17 (depends on 2)

The thermistor according to claim 2, wherein a glass contained in a composition of the bonding material is crystallized glass.

### Claim 18 (depends on 3)

The thermistor according to claim 3, wherein a glass contained in a composition of the bonding material is crystallized glass.

### Claim 19 (depends on 4)

The thermistor according to claim 4, wherein a glass contained in a composition of the bonding material is crystallized glass.

### Claim 20 (depends on 5)

The thermistor according to claim 5, wherein a glass contained in a composition of the bonding material is crystallized glass.
